The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999. INCH-POUND MIL-PRF-19500/509C 25 July 1999 SUPERSEDING MIL-S-19500/509B 25 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6338 AND 2N6341 JAN, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See Figure 1, (similar to TO – 204AA formally TO - 3). 1.3 Maximum ratings. Types 2N6338 2N6341 PT 1/ 2/ PT VCBO VCEO VEBO IC IB TSTG and TOP TA = +25°C TC = +100°C W W V dc V dc V dc A dc A dc °C 200 200 112 112 120 180 100 150 6.0 6.0 25 25 10 10 -65 to +200 -65 to +200 1/ Between TC = +25°C and TC = +200°C, linear derating factor (average) = 1.14 W/°C. 2/ Maintain voltage and current according to the safe operating area shown in figure 4. 1.4 Primary electrical characteristics at TA = 25°C. Limit Min Max hFE1 1/ VBE(SAT) VCE(SAT) Cobo 1 MHz ≤ f ≤ 1 MHz IC = 25 A dc IC = 10 A dc IC = 10 A dc IC = 25 A dc IC = 10 A dc VCE = 2.0 V dc VCE = 2.0 V dc IB = 1.0 V dc IB = 2.5 A dc IB = 1.0 A dc VCB = 10 V dc IE = 0 V dc V dc V dc pF --1.8 --1.8 --1.0 --450 12 --- 30 120 1/ Pulsed, (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/509C 1.4 Primary electrical characteristics at TA = 25°C - Continued. |hFE| Limit Pulse response RθJC f = 10 MHz IC = 1.0 A dc ton toff µs µs °C/W --0.5 --1.25 --.875 VCE = 10 V dc Minimum Maximum 4 12 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (similar to TO – 204AA formally TO - 3) herein. 2 MIL-PRF-19500/509C FIGURE 1. Physical dimensions. (similar to TO – 204AA formally TO - 3) 3 MIL-PRF-19500/509C Ltr Dimensions Inches Min Millimeters Max CD Notes Min Max 0.875 22.23 CH 0.250 0.360 6.35 9.14 HR 0.495 0.525 12.57 13.33 4 HR1 0.131 0.188 3.33 4.78 4 HT 0.060 0.135 1.52 3.43 LD 0.038 0.043 0.97 1.09 LL 0.312 0.500 7.92 12.7 0.050 L1 4, 6 1.27 6 4 MHD 0.151 1.65 3.83 41.91 MHS 1.177 1.197 29.90 30.40 PS 0.420 0.440 10.67 11.18 3 PS1 0.205 0.225 5.21 5.72 3 S1 0.655 0.675 16.64 17.15 Notes 1, 2, 5, 7 1, 2, 5, 7 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points 0.050 inch (1.27 mm) + 0.005 inch (0.13 mm) - 0.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Lead designation, shall be as follows: Lead Number 1 Emitter 2 Base Case Collector FIGURE 1. Physical dimensions (similar to TO – 204AA formally TO - 3) - Continued. 4 MIL-PRF-19500/509C 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3 ). 4.VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 9 ICEX1 and hFE2 Not applicable 11 ICEX1 = 100 percent of initial value or 3 µA dc, whichever is greater; ICEX1 and hFE2 ∆hFE2 = ±25 percent of initial value. 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I Subgroup 2 of table I herein; herein; ∆ICEX1 = 100 percent of initial value or 3 µA dc, whichever is greater; ∆ICEX1 = 100 percent of initial value or 3 µA dc, whichever is greater; ∆hFE2 = ± 25 percent of initial value. ∆hFE2 = ± 25 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB ≥ 20 V dc minimum; TJ = +187.5°C ± 12.5°C The selected IC and VCE values used for burn-in should fall within the safe operating area outlined in figure 4. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 5 MIL-PRF-19500/509C 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A, all internal leads for each device shall be pulled separately. B4 1037 VCE = 20 V dc, 2,000 cycles. B5 1027 VCE = 20 V dc minimum; TJ = +275°C minimum; t = 96 hours. 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A, all internal leads for each device shall be pulled separately. B3 1037 For solder die attach: VCE ≥ 20 V dc, 2,000 cycles. B3 1027 For eutectic die attach: VCE ≥ 20 V dc adjust PT to achieve TJ = +175°C minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF- and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A; weight = 10lbs.; time = 15 s. C6 1037 For solder die attach: VCE ≥ 20 V dc, 6,000 cycles. C3 1027 For eutectic die attach: VCE ≥ 20 V dc adjust PT to achieve TJ = +175°C minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurement shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power applications shall be 3.0 A dc. b. Collector to emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be 25°C ≤ tr ≤ 75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit for RθJC shall be 0.875°C/W. 6 MIL-PRF-19500/509C TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Unit Limits Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage, collector to emitter 3011 Bias condition D, IC = 50 mA dc Pulsed (see 4.5.1) V(BR)CEO 2N6338 2N6341 Collector to emitter cutoff current 100 150 3041 Bias condition D, ICEO 50 µA dc 100 µA dc 10 10 µA dc µA dc 10 10 µA dc µA dc VBE(SAT) 1.8 V dc VCE = 50 V dc 2N6338 2N6341 VCE = 75 V dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6 V dc IEBO collector to emitter cutoff current 3041 Bias condition A, VBE = -1.5 V dc ICEX1 VCB = 100 V dc 2N6338 2N6341 Collector to base cutoff current V dc V dc VCB = 150 V dc 3036 Bias condition D ICBO VCB = 120 V dc 2N6338 2N6341 VCB = 180 V dc Base to emitter saturation voltage 3066 Collector to emitter saturation voltage 3071 IB = 1.0 A dc; IC = 10 A dc; pulsed (see 4.5.1) VCE(SAT)1 1.0 V dc Collector to emitter saturation voltage 3071 IB = 2.5 A dc; IC = 25 A dc; pulsed (see 4.5.1) VCE(SAT)2 1.8 V dc Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 0.5 A dc; pulsed (see 4.5.1) hFE1 40 Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 10 A dc; pulsed (see 4.5.1) hFE2 30 Test condition A; IB = 1.0 A dc; IC = 10 A dc; pulsed (see 4.5.1) See footnotes at end of table. 7 120 MIL-PRF-19500/509C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Unit Limits Min Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 2 V dc; IC = 25 A dc; pulsed (see 4.5.1) hFE3 12 Subgroup 3 2/ TA = +150°C High temperature operation: Collector to emitter cutoff current 3041 Bias condition A, VBE = -1.5 V dc ICEX2 1.0 1.0 mA dc mA dc ton 0.5 µs toff 1.25 µs ts 1.0 µs VCE = 100 V dc 2N6338 2N6341 VCE = 150 V dc Low temperature operation: Forward-current transfer ratio TA = -55°C 3076 VCE = 2.0 V dc; IC = 10 A dc; pulsed (see 4.5.1) 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2. hFE4 10 Subgroup 4 Pulse response Turn-on time VCC ≈ 80 V; IC = 10 A dc IB1 = 1.0 A dc Turn-off time VCC ≈ 80 V; IC = 10 A dc IB1 = IB2 = 1.0 A dc Storage time VCC ≈ 80 V; IC = 10 A dc IB1 = IB2 = 1.0 A dc Magnitude of common emitter, small-signal short-circuit, forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 1.0 A dc; f = 10 MHz |hFE| Open capacitance open circuit 3236 VCB = 10 V dc; IE = 0; 0.1 MHz ≤ f ≤ 1 MHz Cobo See footnotes at end of table. 8 4.0 12 450 pF MIL-PRF-19500/509C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 Safe operating area (dc operation) 3051 TC = +25°C; t = 1 s; 1 cycle (see figure 3) Test 1 (Both device types) IC = 25 A dc; VCE = 8 V dc Test 2 (Both device types) IC = 14 A dc; VCE = 14 V dc Test 3 IC = 100 mA dc; VCE = 100 V dc 2N6338 IC = 66 mA dc; VCE = 150 V dc 2N6341 Safe operating area (switching) 3053 Load condition C; (unclamped inductive load) see figure 4 TC = +25°C; duty cycle ≤ 10 percent; Rs = 0.1Ω; tr = tf ≤ 500 ns Test 1 tp ≈ 5 ms (vary to obtain IC); RBB1 = 10 Ω; VBB1 = 20 V dc; RBB2 = ∞; VBB2 =0; VCC = 50 V dc; IC = 20 A dc L = 3 µH Test 2 tp ≈ 5 ms (vary to obtain IC); RBB1 = 100 Ω; VBB1 = 10 V dc; RBB2 = ∞; VBB2 =0; VCC = 50 V dc; IC = 200 mA dc L = 10 mH See footnotes at end of table. 9 Symbol Unit Limits Min Max MIL-PRF-19500/509C TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Symbol Unit Limits Min Max Subgroup 5 - Continued Safe operating area (switching) 3053 Clamped inductive load; TA = +25°C; duty cycle ≤ 5 percent; tp ≈ 1.5 ms (vary to obtain IC); VCC ≈ 50 V dc; IC ≈ 25 A dc; (see figure 5) 2N6338 2N6341 Electrical measurements Clamped voltage = 100 V dc Clamped voltage = 150 V dc See table I, subgroup 2 herein. 1/ For sampling plan see MIL-PRF-19500. 2/ The sample units subjected to the high-temperature operation test shall be permitted to return to and be stabilized at room ambient temperature prior to their being subjected to the low-temperature operation test. 10 MIL-PRF-19500/509C TABLE II. Groups B and C delta electrical measurements. 1/ 2/ 3/ Step 1. Inspection Collector to emitter cutoff current MIL-STD-750 Method Conditions 3041 Bias condition A; VBE = -1.5 V dc Forward-current transfer ratio Limits Min Unit Max ∆ICEX1 100 percent of initial value or 2 mA dc; whichever is greater. ∆hFE1 ±25 percent change from previously measured value. VCE = 100 V dc 2N6338 2N6341 2. Symbol VCE = 150 V dc 3076 VCE = 2 V dc; IC =0.5 A dc; pulsed (see 4.5.1) 1/ The delta electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroups 3, 4, and 5, .see table II herein, steps 1 and 2. 2/ The delta electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroups 3 and 6, see table II herein, step 2. 3/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 6, .see table II herein, step 1. 11 MIL-PRF-19500/509C FIGURE 2. Switching time test circuits. 12 MIL-PRF-19500/509C FIGURE 3. Maximum safe operating area graph (continuous dc) for types 2N6338 and 2N6341. 13 MIL-PRF-19500/509C FIGURE 4. Safe operating area for switching between saturation and cutoff - unclamped inductive load. 14 MIL-PRF-19500/509C Procedure: 1. With switch S1 closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero. 3. Perform specified end-point tests. NOTES: 1. Either a clamping circuit or clamping diode may be used. 2. The coil used shall provide a minimum inductance of 5 mH at 25 A with a maximum dc resistance of .1Ω. For reference only: 4 Triad C-48U; (20 mH windings in parallel) or equivalent. 3. RS ≤ .1Ω, 12 W, 1 percent tolerance maximum (noninductive). FIGURE 5. Clamped inductive sweep test circuit. 15 MIL-PRF-19500/509C 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.1.1). b. The lead finish as specified (see 3.3.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Design and application guidance. The following PNP type transistors are complementary to the NPN devices listed herein. Transistor (NPN) Complementary (PNP) transistor types 2N6338 2N6437 2N6341 2N6438 6.5 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians: Army - CR Air Force - 11 NASA - NA DLA – CC Preparing activity: DLA - CC (Project 5961-2070) Review activities: Air Force – 80, 99 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of Requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/509C 2. DOCUMENT DATE (YYMMDD) 990725 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6338 AND 2N6341 JAN, JANTX, JANTXV AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone, c. ADDRESS : Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-68880 Previous editions are obsolete WHS/DIOR, Feb 99