ETC JANTX2N6249

 The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 5 December 1997. INCH POUND
MIL-PRF-19500/510C
5 September 1997
SUPERSEDING
MIL-S-19500/510B
18 April 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N6249, 2N6250, AND 2N6251
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of
product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (Similar to TO-3) and figure 2 (JANHC and JANKC).
1.3 Maximum ratings.
PT 1/
TA = +25(C
W
2N6249 5.5
2N6250 5.5
2N6251 5.5
Type
PT 2/
TC = +25(C
W
175
175
175
VCBO
V dc
300
375
450
1/ Derate linearly at 34.2 mW/(C for TA > 25(C.
2/ Derate linearly at 1.0 W/(C for TC > 25(C.
VCEO
V dc
200
275
350
VEBO
V dc
6.0
6.0
6.0
IC
A dc
10
10
10
IB
A dc
5.0
5.0
5.0
Top
and
TSTG
(C
-55
to
+200
R JC
max
(C/W
1.0
1.0
1.0
1.4 Primary electrical characteristics at TA = 25(C.
Types
2N6249
2N6250
2N6251
Limits
Minimum
Maximum
Minimum
Maximum
Minimum
Maximum
hFE
IC = 10 A dc
VCE = 3 V dc
10
50
8
50
6
50
Cobo
VCB= 10 V dc
IE = 0 V dc
100 kHz f 1 Mhz
pF
500
500
500
hfe
VCE = 10 V dc
IC = 1 A dc
f = 1 MHz
2.5
15.0
2.5
15.0
2.5
15.0
Pulse response
ton
toff
µs
µs
2.0
4.5
2.0
4.5
2.0
4.5
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving
this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East
Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/510C
Symbol
CD
CH
HR
HR1
HT
LD
LL
L1
MHD
MHS
PS
PS1
S1
Min Max .875 .250 .450 .495 .525 .131 .188 .050 .135 .038 .053 .312 .500 -- .050 .151 .161 1.177 1.197 .420 .440 .205 .225 .665 .675 Inches
Millimeters
Min
6.35
12.57
3.33
1.27
0.97
7.92
---
3.84
29.90
10.67
5.21
16.64
Max
22.23
11.43
13.34
4.78
3.43
1.35
12.70
1.27
4.09
30.40
11.18
5.72
17.15
Note
3, 5
3
5
2
2, 3
2
NOTES:
1. Dimension are in inches. Metric equivalents are given for general information only.
2. These dimensions should be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gage
is not used, measurement will be made at seating plane.
3. Two leads.
4. Collector shall be electrically connected to the case.
5. LD applies between L1 and LL max. Diameter is uncontrolled in L1.
FIGURE 1. Physical dimensions (similar to T0-3).
2
MIL-PRF-19500/510C
Symbol
A, C
Dimension
Millimeters
Min Max
5.29 6.05
Inches
Min
.228
DESIGN DATA
Max Metallization:
.238 Top: . . . . . . . . . . Aluminum 40,000 Å minimum, 50,000 Å nominal
Back: . . . . . . . . . . Gold 2,500 Å minimum, 3,000 Å nominal
Back side . . . . . . . . Collector
Chip thickness . . . . . . 10 mils ±2 mils
Bonding pad : B = .016 (0.41 mm) x .060 (1.52 mm).
E = .016 (0.41 mm) x .070 (1.78 mm).
FIGURE 2. JANC (A-version) die dimensions.
3
MIL-PRF-19500/510C
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified
herein.
3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and figures 1 (T0-3 ) and 2 (die) herein.
3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein.
3.4 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer, the marking of
the country of origin may be omitted from the body of the transistor.
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.
3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4
MIL-PRF-19500/510C
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein.
4.2.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with
MIL-PRF-19500.
4.3 Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV),
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the
limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
9
11
12
13
Measurement
JANS level
JANTX and JANTXV levels
ICEX1 and hFE1
ICEX1 and hFE1
ICEX1 and hFE1
ICEX1 and hFE1;
ICEX1 = 100 percent of
initial value or 10 µA dc,
whichever is greater;
hFE1 = ±15 percent.
See 4.3.1
See 4.3.1
Subgroups 2 and 3 of table I
Subgroup 2 of table I herein;
ICEX1 = 100 percent of
herein; ICEX1 = 100 percent
of initial value or 10 µA dc,
initial value or 10 µA dc,
whichever is greater;
whichever is greater;
hFE1 = ±25 percent of
hFE1 = ±25 percent of initial
value.
initial value.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
VCB = 100 V dc
TJ = +187.5(C ±12.5(C
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein.
Group A inspection shall be performed on each sublot.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup
testing in table VIa (JANS) and table VIb (JAN, JANTX, JANTXV), of MIL-PRF-19500. Electrical measurements (end points)
shall be in accordance with table I, group A, subgroup 2 herein.
5
MIL-PRF-19500/510C
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
2037
Test condition A, all internal leads for each device shall be pulled separately.
B4
1037
VCE 20 V dc minimum; ton = toff = 3 minutes minimum for 2,000 cycles.
B5
1027
VCB = 10 V dc minimum; TA = +150(C maximum.
B6
3131
See 4.5.2.
4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
1031
VCE 20 V dc minimum; ton = toff = 3 minutes minimum for 2,000 cycles.
B5
3131
See 4.5.2.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup
testing in table VII of MIL-PRF-19500. Electrical measurements (end points) shall be in accordance with table I, group A,
subgroup 2 herein.
4.4.3.1 Group C inspection, table V of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition A; weight - 10 pounds; time - 15 seconds.
C3
2016
Non-operating 1,500 G; 0.5 ms, 5 blows in each orientation: X1, Y1, Y2, Z1 (total 20 blows)
C6
1026
VCE = 20 V dc; TJ = +187.5(C ±12.5(C; ton = toff = 3 minutes minimum or 6,000 cycles.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurement shall be conducted in accordance with test method 3131 of
MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power applications shall be 3.0 A dc.
b.
Collector to emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be 25(C tr 75(C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to header.
f.
Maximum limit for RJC shall be 1.0(C/W.
4.5.3 Coil selection for safe operating area (SOAR) tests. In selecting coils for use in the clamped and unclamped inductive
SOAR tests, prime consideration should be given to the recommended commercially available coil. However, due to the extreme
critical nature of the coil in these circuits and the wide tolerance of some commercially available coils (+100, -50 percent), it shall
be the semiconductor manufacturer's responsibility, to prove upon request, compliance or equivalency of any coil used
(commercial or in-plant designed) to within (+20,-10 percent), of the specified inductance at the rated current and dc resistance.
6
MIL-PRF-19500/510C
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
Visual and mechanical
examination
Subgroup 2
Breakdown voltage,
collector to emitter
2N6249
2N6250
2N6251
Breakdown voltage,
collector to emitter
2N6249
2N6250
2N6251
Emitter to base
cutoff current
Collector to emitter
cutoff current
2N6249
2N6250
2N6251
Collector to emitter
cutoff current
2N6249
2N6250
2N6251
Collector to base
cutoff current
2N6249
2N6250
2N6251
Forward-current
transfer ratio
2N6249
2N6250
2N6251
Method
2071
3011
3011
3061
3041
3041
3036
3076
MIL-STD-750
Conditions
Bias condition D, IC = 200 mA dc,
L = 42 mH; f = 30-60 Hz (see
figure 3)
Bias condition B, IC = 200 mA dc
L = 14 mH; f = 30-60 Hz;
RBE = 50 ohms (see figure 3)
Bias condition D, VEB = 6 V dc
Bias condition D
VCE = 150 V dc
VCE = 225 V dc
VCE = 300 V dc
Bias condition A, VBE = -1.5 V dc
VCE = 225 V dc
VCE = 300 V dc
VCE = 375 V dc
Bias condition D
VCB = 300 V dc
VCB = 375 V dc
VCB = 450 V dc
VCE = 3 V dc; IC = 10 A dc;
pulsed (see 4.5.1)
See footnotes at end of table.
7
Symbol
V(BR)CEO
V(BR)CER
IEBO
ICEO
ICEX
ICBO
hFE
Limits
Min
200
275
350
225
300
375
10
8
6
Max
100
1.0
1.0
1.0
100
100
100
0.5
0.5
0.5
50
50
50
Unit
V dc
V dc
V dc
V dc
V dc
V dc
µA dc
mA dc
mA dc
mA dc
µA dc
µA dc
µA dc
mA dc
mA dc
mA dc
MIL-PRF-19500/510C
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 2 - Continued
Collector to emitter
saturation voltage
2N6249
2N6250
2N6251
Base to emitter
saturation voltage
2N6249
2N6250
2N6251
Subgroup 3
High temperature
operation
Collector to emitter
cutoff current
2N6249
2N6250
2N6251
Low-temperature
operation
Forward-current
transfer ratio
2N6249
2N6250
2N6251
Subgroup 4
Pulse response:
Turn-on time
2N6249
2N6250
2N6251
Method
3071
3066
3041
3076
3251
MIL-STD-750
Conditions
IC = 10 A dc;
pulsed (see 4.5.1)
IB = 1.0 A dc
IB = 1.25 A dc
IB = 1.67 A dc
Test condition A;
IC = 10 A dc; pulsed (see 4.5.1)
IB = 1.0 A dc
IB = 1.25 A dc
IB = 1.67 A dc
TA = +125(C
Bias condition A, VBE = -1.5 V dc
VCE = 225 V dc
VCE = 300 V dc
VCE = 375 V dc
TA = -55(C
VCE = 3.0 V; IC = 10 A dc;
pulsed (see 4.5.1)
Test condition A except test
circuit and pulse requirements
in accordance with figure 4.
VCC = 200V dc; IC = 10 A dc
IB = 1.0 A dc
IB = 1.25 A dc
IB = 1.67 A dc
See footnotes at end of table.
8
Symbol
VCE(SAT)
VBE(SAT)
ICEX1
ton
Limits
Min
Max
1.5
1.5
1.5
2.25
2.25
2.25
1
1
1
5
4
3
2.0
2.0
2.0
V dc V dc V dc V dc V dc V dc mA dc mA dc mA dc µs
µs
µs
Unit
MIL-PRF-19500/510C
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 4 - Continued
Turn-off time
2N6249
2N6250
2N6251
Magnitude of small signal short circuit forward
current transfer
ratio
Open capacitance
open circuit
Subgroup 5
Safe operating area
(dc operation)
Test 1
Test 2
Test 3
Test 4
Test 5
Test 6
Subgroup 6
Safe operating area
(switching)
Test 1
Method
3306
3236
3051
3053
MIL-STD-750
Conditions
VCC = 200 V dc; IC = 10 A dc
IB = 1.0 A dc
IB = 1.25 A dc
IB = 1.67 A dc
VCE = 10 V dc; IC = 1.0 A dc;
f = 1 MHz
VCB = 10 V dc; IC = 0;
100 kHz f 1 MHz
TC = +25(C; t = 1 s;
1 cycle (see figure 5)
IC = 10 A dc; VCE = 17.5 V dc
IC = 5.8 A dc; VCE = 30 V dc
IC = 0.3 A dc; VCE = 100 V dc
2N6249 only: IC = 0.13 A dc
VCE = 200 V dc
2N6250 only: IC = 0.09 A dc
VCE = 275 V dc
2N6251 only: IC = 0.065 A dc
VCE = 350 V dc
Load condition C; (unclamped
inductive load) see figure 6
TC = +25(C; duty cycle 10
percent; Rs = 0.1 ;
tp 5 ms (vary to obtain IC);
RBB1 = 2
VBB1 = 10 V dc
RBB2 = 50
VBB2 = 4 V dc
VCC = 10 V dc
IC = 10 A dc
L = 50 µH at 10 A dc
6
6
6
See footnotes at end of table.
9
Symbol
toff
hFE
Cobo
Limits
Min
Max
4.5
4.5
4.5
2.5
15
500
Unit
µs
µs
µs
pF
MIL-PRF-19500/510C
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 6 - Continued
Test 2
Subgroup 7
Safe operating area
(switching)
Method
MIL-STD-750
Conditions
tp 5 ms (vary to obtain IC);
RBB1 = 40
VBB1 = 10 V dc
RBB2 = 50
VBB2 = 4 V dc
VCC = 10 V dc
IC = 2.0 A dc
L = 500 µH at 2.0 A dc
RL .01
(See figure 7)
TC = +25(C; duty cycle 10
percent;
tp 5 ms (vary to obtain IC);
Rs = 0.1
VCC = 10 V dc
IC = 10 A dc
Clamp voltage:
2N6249 = 200 V dc
2N6250 = 275 V dc
2N6251 = 350 V dc
6
6
6
6
1/ For sampling plan, see MIL-PRF-19500.
10
Symbol
Limits
Min
Max
Unit
MIL-PRF-19500/510C
NOTE: The sustaining voltages VCEO and VCER are acceptable when the traces fall to the right of
point "A" for type 2N6249, point "B" for type 2N6250, and point "C" for type 2N6251 (IC = 0.2 A).
FIGURE 3. VCEO, VCER measurement circuit.
11
MIL-PRF-19500/510C
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be each < 20 ns, duty cycle
2 percent; generator source impedance shall be 50 ohms; pulse width = 20 µs.
2. Output sampling oscilloscope; Zin 100 k6; Cin 50 pF, rise time < 2 ns.
FIGURE 4. Pulse response test circuit.
12
MIL-PRF-19500/510C
FIGURE 5. Maximum safe operating area graph (continuous dc).
13
MIL-PRF-19500/510C
FIGURE 6. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
14
MIL-PRF-19500/510C
NOTES:
1. Either a clamping circuit or clamping diode may be used.
2. The coil used shall provide a minimum inductance of 50 µH at 10 A
with a maximum dc resistance of 0.16 (see 4.5.3).
3. RS 0.16, 12 W, 1 percent tolerance maximum (noninductive).
Procedure:
1. With switch S1 closed, set the specified test conditions.
2. Open S1. Device fails if clamp voltage not reached and
maintained until the current returns to zero.
3. Perform specified end-point tests.
FIGURE 7. Clamped inductive sweep test circuit.
15
MIL-PRF-19500/510C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2).
When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible
packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory
Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System
Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated
packaging files, CD-ROM products, or by contacting the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced
(see 2.2.1).
b.
Lead finish (see 3.3.1).
c.
Type designation and product assurance level.
d.
Packaging requirements (see 5.1).
6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the
previous issue due to the extent of the changes.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time
of award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually
been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to
arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may
be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to
qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.5 Suppliers of JANC die. The qualified JANC suppliers with the applicable letter version (example, JANHCA6249) will be
identified on the QPL. The Part or Identifying Number (PIN) is listed below:
PIN
2N6249
2N6250
2N6251
JANC ordering information
Manufacturer
33178
A6249
A6250
A6251
CONCLUDING MATERIAL
Custodians:
Air Force - 17
Preparing activity:
DLA-CC
Review activities:
Air Force - 19, 85, 99
(Project 5961-1820)
16
MIL-PRF-19500/510C
67$1'$5',=$7,21'2&80(17,03529(0(17352326$/
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
,5(&200(1'$&+$1*(
1. DOCUMENT NUMBER
MIL-PRF-19500/510C
2. DOCUMENT DATE
(YYMMDD) 97/09/05
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6249, 2N6250,
AND 2N6251 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets
as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
7. DATE SUBMITTED
(YYMMDD)
(2) AUTOVON
(If applicable)
8. PREPARING ACTIVITY
a. NAME
Alan Barone
b. TELEPHONE (Include Area Code)
(1) Commercial
(2) AUTOVON
614-692-0510
850-0510
c. ADDRESS (Include Zip Code)
Defense Supply Center Columbus
ATTN: DSCC-VAT
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403,
Falls Church, VA 22041-3466
Telephone (703) 756-2340 AUTOVON 289-2340
'')RUP2&7
Previous editions are obsolete
198/290