The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 November 2001. INCH-POUND MIL-PRF-19500/421F 25 August 2001 SUPERSEDING MIL-PRF-19500/421E 2 April 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP, COMPLEMENTARY, SILICON TYPES 2N3838, 2N4854, AND 2N4854U JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for unitized, dual transistors which contain a pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Polarity designation. Voltages and currents of limits and test conditions shown herein apply to the NPN triode. For the PNP triode, the values are the same, but the polarity designations shall be the opposite. 1.3 Physical dimensions. See figures 1 (6 lead flatpak), 2 (similar to T0-77), and 3 (surface mount). 1.4 Maximum ratings. q q PT at TA = +25 C 2N3838 (2) VCBO PT at TC = +25 C (1) 2N4854 (3) 2N3838 (4) 2N4854 (5) One Transistor Total Device One Transistor Total Device One Transistor Total Device One Transistor Total Device W W W W W W W W V dc 0.25 0.35 0.30 0.60 0.7 1.4 1.0 2.0 60 (1) (2) (3) (4) (5) VEBO VCEO V1C-2C Lead to case voltage IC TJ TSTG V dc V dc V dc V dc MA dc qC qC 5 40 r120 r120 600 200 -55 to +200 TC rating do not apply to surface mount devices (2N4854U). For TA > +25qC, derate linearly 1.43 mW/qC one transistor, 2.00 mW/qC both transistors. For TA > +25qC, derate linearly 1.71 mW/qC one transistor, 3.43 mW/qC both transistors. For TC > +25qC, derate linearly 4.0 mW/qC one transistor, 8.0 mW/qC both transistors. For TC > +25qC, derate linearly 5.71 mW/qC one transistor, 11.43 mW/qC both transistors. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/421F 1.5 Primary electrical matching characteristics of each individual section. Characteristics apply to all case outlines. hFE5 (1) VCE = 10 V dc IC = 150 mA dc hFE3 (1) VCE = 10 V dc IC = 10 mA dc hFE2 VCE = 10 V dc IC = 100 A dc 100 300 75 35 MIN MAX ~ ~ hfe VCE = 10 V dc IC = 20 mA dc f = 100 MHz MIN MAX (1) (2) P VCE(sat) (1) IB = 15 mA dc IC = 150 mA dc VBE(sat) (1) IB = 15 mA dc1.5 IC = 150 mA dc V dc V dc 0.80 1.25 0.4 Cobo VCB = 10 V dc IE = 0 100 kHz f 1 MHz VCEO (2) IC(on) = 600 mA dc IB(on) = 120 mA dc IB(off) = 0 t(on) See figure 4 t(off) See figure 5 ton + toff See figure 6 pF V dc ns ns ns 45 300 18 d d 2 8 40 8 Pulsed (see 4.5.1). See 4.5.2. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein the text of this document take precedence. Nothing in this document, however, shall supersede applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/421F Ltr A B C D E F Dimensions Inches Millimeters Min Max Min Max .240 .290 6.10 7.37 .115 .160 2.92 4.06 .030 .080 0.76 2.03 .003 .006 0.08 0.15 .005 .035 0.13 0.89 .010 .019 0.25 0.48 Notes Ltr G H J K L M 4 4, 6 Dimensions Inches Millimeters Min Max Min Max .100 TP 2.54 TP .050 1.27 .015 0.38 .050 TP 1.27 TP .070 .250 1.78 6.35 .260 .650 6.60 16.51 NOTES: 1. 2. 3. 4. 5. 6. 7. Dimensions are in inches. Metric equivalents are given for general information only. Maximum limit of this dimension does not apply to device supplied in a carrier. All six leads. Lead dimensions are uncontrolled in this zone. Dimensions "F", "G", and "K" to be measured in zone "H". Leads within .005 inch (0.13 mm) total of true position (TP) at "H" with maximum material condition. FIGURE 1. Physical dimensions of transistor type 2N3838 (all quality levels). 3 Notes 6, 7 5 6, 7 3, 4 MIL-PRF-19500/421F Dimensions Ltr Dimensions Notes CD CH HD HT LD LL Inches Min Max .305 .335 .140 .260 .335 .370 .009 .125 .016 .021 .500 1.750 Millimeters Min Max 7.75 8.51 3.56 6.60 8.51 9.40 0.23 3.18 0.41 0.53 12.70 44.45 Ltr LS1 LS2 LU TL TW 3, 7 7 Notes Inches Min Max .0707 Nom. .1000 Nom. .016 .019 .029 .045 .028 .034 Millimeters Min Max 1.796 Nom. 2.540 Nom. 0.41 0.48 0.74 1.14 0.71 0.86 NOTES: 1. 2. 3. 4. 5. 6. 7. Dimensions are in inches. Metric equivalents are given for general information only. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane. Measured in the zone .050 inch (1.27 mm) and .250 inch (6.35 mm) from the seating plane. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below the seating plane of the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. Measured from the maximum diameter of the actual device. All six leads. FIGURE 2. Physical dimensions of transistor type 2N4854 (all quality levels). 4 5 5 4, 7 6 MIL-PRF-19500/421F Ltr A A1 B1 B2 B3 D D1 Dimensions Inches Millimeters Min Max Min Max .058 .100 1.47 2.54 .026 .039 0.66 0.99 .022 .028 0.56 0.71 .072 Ref. 1.83 Ref. .006 .022 0.15 0.56 .165 .175 4.19 4.45 .095 .105 2.41 2.67 Ltr D2 D3 E E1 L1 L2 L3 Dimensions Inches Millimeters Min Max Min Max .045 .055 1.14 1.40 .175 4.45 .240 .250 6.10 6.35 .250 6.35 .060 .070 1.52 1.78 .082 .098 2.08 2.49 .003 .007 0.08 0.18 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers. FIGURE 3. Physical dimensions of transistor type 2N4854U. 5 MIL-PRF-19500/421F 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.2). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: V1C-2C ...................................Voltage difference between the collector of transistor one and that of transistor two. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (flat pack), 2 (similar to T0-77) and 3 (surface mount) herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.4, 1.5, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c 9 10 11 12 13 Measurement JANTX and JANTXV levels Thermal impedance (see 4.3.2) Not applicable 48 hours minimum ICBO2 and hFE5 Burn-in (see 4.3.1) 80 hours minimum Subgroup 2 of table I herein; 'ICBO2 = 100 percent of initial value or 25 nA dc; whichever is greater for the 2N3838. 'ICBO2 = 100 percent of initial value or 5 nA dc; whichever is greater for the 2N4854, 2N4854U. 'hFE5 = 15 percent of initial value. 6 MIL-PRF-19500/421F 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the general requirements of MIL-STD-750, (see 4.5); PT = 1.0 W: 2N3838: 2N4854: 2N4854U: PT = 175 mW each transistor (350 mw total device). PT = 300 mW each transistor (600 mW total device). PT = 300 mW each transistor (600 mW total device). NOTE: No heat sink or forced air cooling on the devices shall be permitted. * 4.3.2 Thermal impedance (ZTJX measurements). The ZTJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IH forward heating current ........................................... 200 mA.minimum. b. tH heating time ............................................................ 25 -30 ms. c. IM measurement current ............................................ 5 mA. d. tMD measurement delay time ...................................... 60 Ps maximum. e. VCE collector to emitter .............................................. 10 V. The maximum limit for ZTJX under these conditions are ZTJX (maximum) = 4.5°C/W. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in 4.4.2.1 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in accordance with group A, subgroup 2 herein. * 4.4.2.1 Group B inspection, (JAN, JANTX, and JANTXV). 1/ Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 -30 V dc, power shall be applied to achieve TJ = +150qC minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200qC. n = 22, c = 0. ________ 1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 7 MIL-PRF-19500/421F * 4.4.2.2 Group B sample selection. Samples selected for group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with table I, group A, subgroup 2 herein. * 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E, not applicable to U. C6 1026 1,000 hours at VCB =30 V dc; 2N4854, 2N4854U: PT = 300 mW (one section); PT = 600 mW (both sections); 2N3838: PT = 175 mW each transistor (350 mW total device); at TA = +30qC r5qC. No heat sink or forced-air cooling on the device shall be permitted. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Testing of units. All specified electrical tests, including end-point tests, shall be performed equally on both sections of the transistor types covered herein, except where the electrical characteristic being evaluated applies to the transistor as a device entity. 8 MIL-PRF-19500/421F TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical examination 2071 *Solderability 3/ 2026 n = 15 leads, c = 0 *Resistance to solvents 3/, 4/ 1022 n = 15 devices, c = 0 * Temp cycling 3/ 1051 Test condition C, 25 cycles n = 22 devices, c = 0 * Heremetic seal Fine leak Gross leak 1071 n = 22 devices, c = 0 *Electrical measurements Bond strength 3/ 2037 Group A, subgroup 2 Precondition TA = +250 C at t = 2 hrs, n = 11 wires, c = 0 3036 q Subgroup 2 Collector to base cutoff current Breakdown voltage, collector to emitter 3011 Bias condition D; VCB = 60 V dc Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) Emitter to base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO1 Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO2 10 ICBO1 V(BR)CEO 40 2N3838 2N4854 2N4854U Emitter to base cutoff current 3061 Bias condition D; VEB = 3 V dc IEBO2 Forward-current transfer ratio 3076 VCE = 1 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE1 50 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 100 A dc hFE2 35 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE3 50 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) hFE4 75 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc pulsed (see 4.5.1) hFE5 100 P See footnotes at end of table. 9 PA dc V dc 10 PA dc 50 10 10 nA dc nA dc nA dc 10 nA dc 300 MIL-PRF-19500/421F TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued. Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 300 mA dc; pulsed (see 4.5.1) Base emitter saturation voltage 3066 Collector to emitter saturation voltage 3071 hFE6 35 Test condition A; IB = 15 mA dc; IC = 150 mA dc; pulsed (see 4.5.1) VBE(sat) 0.80 IB = 15 mA dc; IC = 150 mA dc; pulsed (see 4.5.1) 1.25 V dc VCE(sat) 0.40 V dc ICBO3 10 PA dc Subgroup 3 q TA = +150 C High temperature operation: * Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc Low temperature operation: 3076 TA = -55 C Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc hFE7 12 Small-signal shortcircuit forward current transfer ratio 3206 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hfe 60 300 Small-signal common emitter input impedance 3201 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hie 1.5 9 Small-signal common emitter output admittance 3216 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hoe Magnitude of smallsignal short-circuit forward current transfer ratio 3306 VCE = 10 V dc; IC = 20 mA dc; f = 100 MHz Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz f 1 MHz Noise figure 3246 q Subgroup 4 ~hfe~ 50 2 : k Phmo 10 Cobo 8 pF VCE = 10 V dc; IC = 100 A dc; f = 1 kHz; RG = 1 k NF 8 dB Turn-on time See figure 4 ton 45 ns Turn-off time See figure 5 toff 300 ns d d : P See footnotes at end of table. 10 MIL-PRF-19500/421F TABLE I. Group A inspection - Continued. MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 4 - Continued. Pulse response See figure 6 ton + toff Collector emitter nonlatching voltage See figure 7 VCEO 18 40 ns V dc Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for laser marked devices. 11 MIL-PRF-19500/421F NOTES: 1. The rise time (tr) of the applied pulse shall be d 2.0 ns, duty cycle d 2 percent, and the generator source impedance shall be 50 :. 2. Sampling oscilloscope: ZIN t 100 k:, CIN d 12 pF, rise time d 0.2 ns. 3. The signs, polarity symbols, and waveforms shown are for the NPN triode; the signs and polarity symbols are reversed for the PNP triode (see 1.2 herein). FIGURE 4. Saturated turn-on switching time test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be d 2.0 ns, duty cycle d 2 percent, and the generator source impedance shall be 50 :. 2. Sampling oscilloscope: ZIN t 100 k:, CIN d 12 pF, rise time d 0.2 ns. 3. The signs, polarity symbols, and waveforms shown are for the NPN triode; the signs and polarity symbols are reversed for the PNP triode (see 1.2 herein). FIGURE 5. Saturated turn-off switching time test circuit. 12 MIL-PRF-19500/421F NOTES: 1. The rise time (tr) of the applied pulse shall be d 2.0 ns, duty cycle d 2 percent, and the generator source impedance shall be 50 :. 2. Sampling oscilloscope: ZIN t 100 k:, CIN d 12 pF, rise time d 0.2 ns. 3. The signs, polarity symbols, and waveforms shown are for the NPN triode; the signs and polarity symbols are reversed for the PNP triode (see 1.2 herein). FIGURE 6. Nonsaturated switching time test circuit. NOTE: The input waveform has the following characteristics: PW d 10 Ps, duty cycle d 2 percent. FIGURE 7. Collector emitter nonlatching voltage test circuit. 13 MIL-PRF-19500/421F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodian: Army - CR Navy - NW Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2049-04) Review activities: Army - AR, MI Navy - MC 14 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. 1. DOCUMENT NUMBER 2. DOCUMENT DATE I RECOMMEND A CHANGE: MIL-PRF-19500/421F 25 August 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP, COMPLEMENTARY, SILICON, TYPES 2N3838, 2N4854 AND 2N4854U, JAN, JANTX, AND JANTXV. 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99