The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2002. INCH-POUND MIL-PRF-19500/394G 5 July 2002 SUPERSEDING MIL-PRF-19500/394F 23 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC). 1.3 Maximum ratings. Types 2N4150, S 2N5237, S 2N5238, S PT (1) TA = +25°C PT (2) TC = +25°C VCBO VCEO VEBO IC TSTG and TJ RθJC (max) RθJA (min) W W V dc V dc V dc A dc °C °C/mW °C/mW 1.0 1.0 1.0 5.0 5.0 5.0 100 150 200 70 120 170 10 10 10 10 10 10 -65 to +200 -65 to +200 -65 to +200 .020 .020 .020 .175 .175 .175 (1) Derate linearly 5.7 mW/°C for TA > +25°C. (2) Derate linearly 50 mW/°C for TC > +100°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/394G 1.4 Primary electrical characteristics. hFE2 (1) hFE3 (1) Cobo hfe VBE(sat) (1) VCE(sat) Limits IC = 5 A dc VCE = 5 V dc IC = 10 A dc VCE = 5 V dc IE = 0 VCB = 10 V dc 100 kHz ≤ f ≤ 1 MHz pF IC = 0.2 A dc VCE = 10 V dc f = 10 MHz IC = 5 A dc IB = 0.5 A dc IC = 5 A dc IB = 0.5 A dc V dc V dc Min Max 40 120 10 1.5 0.6 1.5 7.5 350 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM–DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/394G FIGURE 1. Physical dimensions . 3 MIL-PRF-19500/394G Dimensions Symbol CD CH h HD LC LD LL LU L1 L2 Q r TL TW α Inches Millimeters Min Max 7.75 8.51 6.10 6.60 0.23 1.04 8.51 9.40 .200 TP 5.08 TP .016 .021 0.41 0.53 See notes 14 and 15 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .050 1.27 .010 0.25 .029 .045 0.74 1.14 .028 .034 0.71 0.86 45° TP 45° TP Min .305 .240 .009 .335 Max .335 .260 .041 .370 Notes 5 6 7 7 7 7 13 11,12 3 10 4, 6, 8, 9 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Lead number 4 omitted on this variation. 5. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 inch (1.37 mm) + .001 (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) relative to the tab. The device may be measured by direct methods. 7. LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1 and beyond LL minimum. 8. Lead designation is as follows: 1 - emitter; 2 - base; 3 - collector. 9. Lead number three is electrically connected to case. 10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 11. r (radius) applies to both inside corners of tab. 12. Tab shown omitted. 13. Details of outline in this zone optional. 14. For transistor types 2N4150S, 2N5237S, and 2N5238S, dimension LL = 0.500 inch (12.70 mm) minimum, and 0.750 inch mm) maximum. 15. For transistor types 2N4150, 2N5237, and 2N5238, dimension LL = 1.500 inch (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. FIGURE 1. Physical dimensions - Continued. 4 MIL-PRF-19500/394G NOTES: 1. Chip size: 2. Chip thickness: 3. Top metal: 4. Back metal: 5. Backside: 6. Bonding pad: 120 x 120 mils ± 2 mils. 10 ±1.5mils nominal. Aluminum 30,000Å minimum, 33,000Å nominal. A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.15kÅ/5kÅ/10kÅ/10kÅ nominal. B. Gold 2,500Å minimum, 3,000Å nominal. Collector. B = 52 x 12 mils, E = 84 x 12 mils. FIGURE 2. JANHC and JANKC A-version die dimensions. 5 MIL-PRF-19500/394G NOTES: 1. Die size: 2. Die thickness: 3. Base pad: 4. Emitter pad: 5. Back metal: 6. Top metal: 7. Back side: 8. Glassivation: .155 x .155 inch (3.937 x 3.937 mm). .008 ±.0016 inch (0.2032 ±0.04064 mm). .012 x .090 inch (0.3048 x 2.286 mm). .012 x .090 inch. Gold, 2400 ±720 Ang. Aluminum, 37500 ±7500 Ang. Collector. SiO2, 7500 ± 1500 Ang. FIGURE 3. JANHC and JANKC B-version die dimensions. 6 MIL-PRF-19500/394G 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, on figure 1 (TO- 5) and on figures 2 and 3 (JANHC and JANKC) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this revision to maintain qualification. 7 MIL-PRF-19500/394G * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750, (see 4.3.3). Thermal impedance, method 3131 of MILSTD-750, (see 4.3.3). 7 Hermetic seal (optional) (1) Hermetic seal (optional) (1) 9 ICBO2 and hFE1 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2 ; hFE1; ∆ICB02 = 100 percent of initial value or 50 nA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. ICBO2 and hFE1 12 See 4.3.2 240 hours minimum See 4.3.2 80 hours minimum 13 Subgroups 2 and 3 of table I herein; ∆ICB02 = 100 percent of initial value or 50 nA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. Subgroup 2 of table I herein; ∆ICB02 = 100 percent of initial value or 50 nA dc, whichever is greater; ∆hFE1 = ± 15 percent of initial value. (1) Hermetic seal test shall be performed in either screen 7 or screen 14. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 Vdc. Power shall be applied to achieve TJ =135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3. 8 MIL-PRF-19500/394G 4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IM measurement current ...................... 10 mA. b. IH forward heating current.................... 1 A. c. tH heating time ..................................... 10 - 30 ms. d. tmd measurement delay time............... 30 - 60 µs. e. VCE collector-emitter voltage .............. 16 V dc minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 12°C/W. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein: delta requirements only apply to subgroups, B4, and B5. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc. B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample). VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum, sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. 9 MIL-PRF-19500/394G 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Subgroup Method Condition 1 1039 Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein, delta measurements apply to subgroup C6. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup * Method Condition C2 2036 Test condition E. C5 3131 See 4.5.2, RθJC. C6 Not applicable. 10 MIL-PRF-19500/394G 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, group A, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following conditions shall apply: a. IM: Collector current ............................................................... 10 mA. b. VCE: Measurement current (same as VH).................................. 10 V dc. c. IH: Collector heating current................................................... 0.375 A. d. VH: Collector-emitter heating voltage ...................................... 10 V dc. e. tH: Heating time...................................................................... 1.0 s. f. tMD: Measurement delay time................................................... 30 to 60 µs. g. tSW : Sampling window time....................................................... 10 µs maximum. 4.5.3 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method Symbol Limit Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB = 80 V dc ∆ICB02 (1) 100 percent of initial value or 50 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 5 V dc; IC = 5 A dc; pulsed see 4.5.1 (see figure 4). ∆hFE2 (1) ± 20 percent change from initial reading. (1) Devices which exceed the group A limits for this test shall not be accepted. 11 Unit MIL-PRF-19500/394G TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvent 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temperature cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ 1071 n = 22 devices, c = 0 Fine leak Gross leak Electrical measurements 4/ Bond strength 3/ 4/ * Decap internal 4/ visual (design verification) Group A, subgroup 2 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs, n = 11 wires, c = 0 2075 n = 4 device, c = 0 Subgroup 2 Collector to base cutoff current 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Breakdown voltage, collector to emitter ICBO1 3036 10 µA dc VCB = 100 V dc VCB = 150 V dc VCB = 200 V dc 3011 Bias condition D, IC = 0.1 A dc, pulsed (see 4.5.1) V dc V(BR)CEO 70 120 170 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S See footnotes at end of table. 12 MIL-PRF-19500/394G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued Emitter to base cutoff current 3061 VBE = 7 V dc IEBO1 10 µA dc Collector to emitter cutoff current 3041 Bias condition D ICEO1 10 µA dc ICEX 10 µA dc VCE = 60 V dc VCE = 110 V dc VCE = 160 V dc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Collector to emitter cutoff current 3041 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Bias condition A VBE = 0.5 V dc VCE = 60 V dc VCE = 110 V dc VCE = 160 V dc Emitter to base cutoff current 3061 Bias condition D, VBE = 5 V dc IEBO2 0.1 µA dc Collector to base cutoff current 3036 Bias condition D, VCB = 80 V dc ICBO 0.1 µA dc Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 1 A dc, pulsed (see 4.5.1) hFE1 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 50 50 50 200 225 225 40 120 Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 5 A dc, pulsed (see 4.5.1) hFE2 Collector to emitter voltage (saturated) 3071 IC = 5 A dc, IB = 0.5 A dc, pulsed (see 4.5.1) VCE(sat)1 0.6 V dc Collector to emitter voltage (saturated) 3071 IC = 10 A dc, IB = 1 A dc, pulsed (see 4.5.1) VCE(sat)2 2.5 V dc See footnotes at end of table. 13 MIL-PRF-19500/394G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued Base emitter voltage saturation 3066 Test condition A, IC = 5 A dc, IB = 0.5 A dc, pulsed (see 4.5.1) VBE(sat)1 1.5 V dc Base emitter voltage saturation 3066 Test condition A, IC = 10 A dc, IB = 1 A dc, pulsed (see 4.5.1) VBE(sat)2 2.5 V dc Forward-current transfer ratio 3076 VCE = 5 V dc, IC = 10 A dc, pulsed (see 4.5.1) hFE3 100 µA dc 10 Subgroup 3 High temperature operation: Collector to emitter cutoff current TA = +150°C 3041 ICEX2 VCE = 60 V dc VCE = 110 V dc VCE = 160 V dc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Low temperature operation: Forward-current transfer ratio Bias condition A, VBE = -0.5 V dc TA = -55°C 3076 VCE = 5 V dc, IC = 5 A dc, pulsed (see 4.5.1) hFE4 20 Magnitude of commonemitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc, IC = 0.2 A dc, f = 10 MHz |hfe| 1.5 7.5 Small-signal shortcircuit forward-current transfer ratio 3206 VCE = 5 V dc, IC = 50 mA dc, f = 1 kHz hfe 40 40 40 160 160 250 Subgroup 4 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S See footnotes at end of table. 14 MIL-PRF-19500/394G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Pulse response 3251 Test condition A Symbol Limit Min Unit Max Subgroup 4 - Continued Cobo 350 pF Delay time See figure 5 td 50 ns Rise time See figure 5 tr 500 ns Storage time See figure 5 ts 1.5 µs Fall time See figure 5 tf 500 ns Subgroup 5 Safe operating area (continuous dc) 3051 TC = +25°C, t = 1.0 s, Test 1 VCE = 40 V dc, IC = 0.22 A dc Test 2 VCE = 70 V dc, IC = 90 mA dc Test 3 2N5237, 2N5237S only VCE = 120 V dc, IC = 15 mA dc 2N5238, 2N5238S only VCE = 170 V dc, IC = 3.5 mA dc Clamped inductive sweep Electrical Measurements 1/ 2/ 3/ 4/ 5/ 3053 TC = +100°C minimum, IB = 0.5 A dc, IC = 5 A dc, (see figure 6) See 4.5.3 herein. For sampling plan, see MIL-PRF-19500. For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. Separate samples may be used. Not required for JANS. Not required for laser marked devices. 15 MIL-PRF-19500/394G TABLE II. Group E inspection (all quality levels) – for qualification only. * Inspection MIL-STD-750 Method Conditions Subgroup 1 Temperature cycling (air to air) Qualification 45 devices c=0 1051 Test condition C, 500 cycles Hermetic seal Fine leak Gross leak 1071 Electrical measurements See group A, subgroup 2 herein. 45 devices c=0 Subgroup 2 Intermittent life 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. See table I, group A, subgroup 2 herein. Subgroups 3, 4, 5, 6, and 7 Not applicable Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V Condition B for devices < 400 V 16 45 devices c=0 MIL-PRF-19500/394G FIGURE 4. Maximum operating conditions - dc forward biased mode. 17 MIL-PRF-19500/394G FIGURE 5. Speed of response test circuit. NOTES: 1. An appropriate pulse generator may be substituted. 2. RS ≤ 1.0 Ω noninductive. 3. Clamp voltage: 2N4150: 70 V dc +0 V dc, -5 V dc; 2N5237: 120 V dc +0 V dc, -5 V dc; 2N5238: 170 V dc +0 V dc, -5 V dc 4. STANCOR C-2691 or equivalent; 2 in series. FIGURE 6. Clamped inductive sweep test circuit. 18 MIL-PRF-19500/394G 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. Lead finish (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 19 MIL-PRF-19500/394G 6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example, JANHCA2N4150) will be identified on the QML. JANC ordering information PIN Manufacturers 43611 2N4150 JANHCA2N4150 JANKCA2N4150 34156 JANHCB2N4150 JANKCB2N4150 6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 DLA – CC Preparing activity: DLA - CC (Project 5961 - 2559) Review activities: Army - MI, SM Air Force - 19, 71, 99 20 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/394G 2. DOCUMENT DATE 5 July 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99