LM9013G, LM9013H Preferred Devices Amplifier Transistors NPN Silicon • Moisture Sensitivity Level: 1 http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current – Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C –55 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg 2 BASE 1 EMITTER 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, (Note 1.) Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 3 TO–92 CASE 29 STYLE 1 LM90 13x YWW 1. RJA is measured with the device soldered into a typical printed circuit board. LM9013x = Specific Device Code x = G or H Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping LM9013G TO–92 5000 Units/Box LM9013H TO–92 5000 Units/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 0 1 Publication Order Number: LM9013G/D LM9013G, LM9013H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 25 – 25 – 3.0 – – 0.5 118 144 166 202 – 1.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 16 Vdc, IE = 0) Vdc Vdc Vdc µAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) hFE LM9013G LM9013H Collector–Emitter Saturation Voltage (IC = 250 mAdc, IB = 25 mAdc) – VCE(sat) http://onsemi.com 2 Vdc LM9013G, LM9013H PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 3 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- LM9013G, LM9013H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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