LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For 18dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 2 %, and consumes 120 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11b/g applications. Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50mA Power Gain ~ 33 dB at 2.45GHz & Pout=18dBm Total Current 120 mA for Pout=18 dBm at 2.45 GHz OFDM EVM ~2 % for 64QAM/ 54Mbps & Pout=18dBm Small Footprint: 3x3mm2 Low Profile: 0.9mm WWW . Microsemi .C OM The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 33 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA. APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FCC U-N11 Wireless IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO TJ (°C) 0 to 70 Plastic MLPQ LQ 16-Pin LX5512E-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5512E-LQT) LX5512E Copyright 2002 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5512E I N T E G R A T E D P R O D U C T S InGaP HBT 2.4-2.5GHz Power Amplifier P RELIMINARY D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM DC Supply Voltage, RF off ...............................................................................5V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power............................................................................................-5dBm Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature.......................................................................... -60 to 150°C 13 14 15 16 12 1 11 2 10 3 9 4 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 8 7 6 5 LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Name Pin # RF IN 2,3 VB1 4 Bias current control voltage for the first stage. VB2 6 Bias current control voltage for the second stage. VB3 7 Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC 5 Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10 nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). RF OUT 10, 11 RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage. VC1 16 Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor, followed by a 10 Ohm resistor. This pin can be combined with VC2,VC3 and VCC pins, resulting in a single supply voltage (referred to as Vc). VC2 14 Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass capacitor, followed by a 5 Ohm resistor. This pin can be combined with VC1,VC3 and VCC pins, resulting in a single supply voltage (referred to as Vc). VC3 12 Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). REF 8 Power detector reference output pin should be terminated with a 100 kOhm loading resistor DET 9 Power detector output pin should be terminated with a 100 kOhm loading resistor GND Center Metal RF input for the power amplifier. This pin is AC-coupled to the transistor base of the first stage. The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA Copyright 2002 Rev. 1.0, 2003-01-10 Description LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET Parameter Frequency Range Symbol Test Conditions / Comment f Power Gain at Pout = 18dBm Gp EVM at Pout = 18dBm Total Current at Pout = 18dBm Min 2.4 Ic_total Quiescent Current Icq Bias Control Reference Current Iref LX5512E Typ Max 2.5 Units GHz 33 dB 64QAM / 54Mbps 2.0 % 64QAM / 54Mbps 120 mA 50 mA 1.6 mA For Icq = 50mA Small – Signal Gain S21 32 dB Gain Flatness ∆S21 Over 100MHz ±0.75 dB Gain Variation Over Temperature ∆S21 -40 to +85°C TBD dB Input Return Loss S11 Output Return Loss S22 Reverse Isolation S12 8 10 dB -40 dBc Pout = 18dBm -40 dBc 11Mbps CCK 210 mA 11Mbps CCK -54 dBc 10 ~ 90% TBD ns 1.4 V Pout = 18dBm Third Harmonic Total Current at Pout = 23dBm nd 2 side lobe at 23dBm Ramp-On Time tON Differential Detector Response dB dB -50 Second Harmonic 18dBm OFDM WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vcc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS Copyright 2002 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET WWW . Microsemi .C OM CHARACTERISTIC CURVES S-Parameter Data (Vc=3.3V, Vref=2.9V, Icq=50mA) m7 m2 freq=2.450GHz freq=2.500GHz dB(S(2,1))=31.129 dB(S(2,1))=31.972 m1 m2 m7 m1 freq=2.400GHz dB(S(2,1))=32.831 40 dB(S(2,2)) dB(S(2,1)) dB(S(1,2)) dB(S(1,1)) 30 20 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz EVM Data with 54 Mb/s 64 QAM OFDM (Vc=3.3V, Vref=2.9V, Icq=50mA,freq=2.45 GHz) EVM_PA_ONLY CURRENT_3.3V 190 180 170 160 150 140 130 120 8 7 5 4 3 2 17 17.5 18 18.5 19 Output Power /[dBm] Copyright 2002 Rev. 1.0, 2003-01-10 19.5 20 20.5 CHARTS 1 0 Current /[mA] EVM_PA /[%] 6 110 21 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET WWW . Microsemi .C OM CHARACTERISTIC CURVES ACP and Diff. Detector Data with 54 Mb/s 64 QAM OFDM (Vc=3.3V, Vref=2.9V, Icq=50mA, freq=2.45 GHz) ACP_30MHz Detector_100kOhm 2.2 2 1.8 1.6 1.4 1.2 ACP /[dB] -48 -50 -52 -54 Differential Detector /[V] -46 -44 -56 17 17.5 18 18.5 19 19.5 Output Power /[dBm] 20 20.5 1 21 23 dBm Output @ 11 Mb/s CCK (Vc=3.3V, Vref=2.9V, Icq=50mA, freq=2.45 GHz) CHARTS Copyright 2002 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5512E I N T E G R A T E D P R O D U C T S InGaP HBT 2.4-2.5GHz Power Amplifier P RELIMINARY D ATA S HEET LQ WWW . Microsemi .C OM PACKAGE DIMENSIONS 16-Pin MLPQ Plastic (3x3mm EP) A F E B H G I C D1 D MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020 MECHANICALS Dim A B C D D1 E F G H I Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Copyright 2002 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5512E I N T E G R A T E D P R O D U C T S InGaP HBT 2.4-2.5GHz Power Amplifier P RELIMINARY D ATA S HEET WWW . Microsemi .C OM NOTES NOTES PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2002 Rev. 1.0, 2003-01-10 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7