NTQD6866 Product Preview Power MOSFET 5.8 Amps, 20 Volts N–Channel TSSOP–8 Features • • • • • • • http://onsemi.com New Low Profile TSSOP–8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperatures 5.8 AMPERES 20 VOLTS RDS(on) = 30 mΩ N–Channel Applications • Power Management in Portable and Battery–Powered Products, i.e.: • • Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones Lithium Ion Battery Applications Note Book PC Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous Drain Current – Continuous @ 70°C Drain Current – Single Pulse (tp ≤ 10 s) Total Power Dissipation Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5 Vdc, IL = 10 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance – Junction–to–Ambient (Note 1.) Single Channel Steady State Both Channels Junction–to–Ambient (Note 2.) Both Channels Thermal Resistance – Junction–to–Lead Single Channel Both Channels Steady State Symbol Value Unit VDSS VGS 20 Vdc 12 Vdc ID ID IDM PD 5.8 TBD 20 Adc 1.6 W TJ, Tstg –55 to +150 °C EAS 580 mJ °C/W RJA D G1 G2 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 180 176 N–Channel D S1 S2 TSSOP–8 CASE 948S PLASTIC 8 1 MARKING DIAGRAM & PIN ASSIGNMENT 1 S1 G1 S2 2 3 G2 4 DEVICE MARKING TBD 8 7 6 5 D D D D Top View 100 RJL °C/W 27 24 ORDERING INFORMATION 1. Surface Mounted to Min Pad. 2. Surface Mounted to 1″ x 1″ FR4 Board. Device Package Shipping NTQD6866 TSSOP–8 100 Units/Rail NTQD6866R2 TSSOP–8 3000/Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 1 1 Publication Order Number: NTQD6866/D NTQD6866 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 20 – – TBD – – – – – – 1.0 25 – – – – 100 100 0.6 – 0.9 TBD 1.2 – – – – TBD 0.026 0.031 TBD 0.030 0.040 gFS TBD 17 – Mhos Ciss – 930 TBD pF Coss – 370 TBD Crss – 105 TBD td(on) – 8.6 TBD tr – 14 TBD td(off) – 57 TBD tf – 54 TBD QT – 11 15 Q1 – 2.4 – Q2 – 2.4 – VSD – – 0.7 TBD 1.0 – Vdc trr – 30 – ns ta – 14.5 – tb – 15.5 – QRR – 0.01 – OFF CHARACTERISTICS V(BR)DSS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C) Vdc µAdc IDSS Gate–Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) IGSS(f) IGSS(r) mV/°C nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–State Resistance (VGS = 4.5 Vdc, ID = 7.0 Adc) (VGS = 4.0 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 3.5 Adc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 7.0 Adc) Vdc mV/°C Ω DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 10 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 4 5 Vdc, Vdc RL = 10, RG = 6.0 Ω) Fall Time Gate Charge (VDS = 10 Vdc, VGS = 4.5 Vdc, ID = 5.8 5 8 Adc) Ad ) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (Note 3.) (IS = 1.8 Adc, VGS = 0 Vdc) (IS = 1.8 Adc, VGS = 0 Vdc, TJ = 85°C) Reverse Recovery Time (IS = 1.5 1 5 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/µs) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 µC NTQD6866 PACKAGE DIMENSIONS TSSOP–8 CASE 948S–01 PLASTIC ISSUE O 8x 0.20 (0.008) T U K REF 0.10 (0.004) S 2X L/2 8 B –U– 1 V S J J1 4 PIN 1 IDENT S T U 5 L 0.20 (0.008) T U M ÇÇÇ ÉÉÉÉ ÉÉÉÉ ÇÇÇ K1 K A –V– SECTION N–N –W– C 0.076 (0.003) –T– SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S D DETAIL E G P 0.25 (0.010) N M N P1 F DETAIL E http://onsemi.com 3 DIM A B C D F G J J1 K K1 L M P P1 MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 --2.20 --3.20 INCHES MIN MAX 0.114 0.122 0.169 0.177 --0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 --0.087 --0.126 NTQD6866 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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