ETC PNZ108CLS

Phototransistors
PNZ108CL (PN108CL)
Silicon NPN Phototransistor
Unit : mm
3.0±0.3
For optical control systems
12.7 min.
2.0±0.1
0.2±0.05
Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx)
Wide directional sensitivity for easy use
3-ø0.45±0.05
Fast response : tr = 5 µs (typ.)
2.54±0.25
1.
Signal mixing capability using base pin
0.
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector to base voltage
VCBO
30
V
Emitter to collector voltage
VECO
3
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
20
mA
Collector power dissipation
PC
100
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
3˚
45±
ø5.75 max.
ø4.2±0.2
1.
0±
15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
0.
15
0±
Small size (low in height) package
3
1
2
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
*2
VCE = 10V, L = 500
lx*1
min
3.5
typ
max
Unit
0.05
2
µA
6
mA
λP
VCE = 10V
900
nm
θ
Measured from the optical axis to the half power point
80
deg.
5
µs
Rise time
tr*2
VCC = 10V, ICE(L) = 5mA
Fall time
tf*2
RL = 100Ω
Collector saturation voltage
*1
ICE(L)
*3
Conditions
VCE = 10V
VCE(sat)
µs
6
ICE(L) = 1mA, L = 1000 lx*1
0.3
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT
(Output pulse)
RL
;;;;
;;
50Ω
*3 I
CE(L)
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Classifications
Class
Q
R
S
ICE(L) (mA)
3.5 to 6.0
5.0 to 9.1
> 7.5
Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNZ108CL
ICE(L) — VCE
80
60
40
20
Ta = 25˚C
T = 2856K
16
1000 lx
12
750 lx
8
500 lx
4
250 lx
20
40
60
80
0
100
Ta (˚C )
0
4
8
10
1
10 –1
1
10 –1
20
40
60
Ambient temperature
80
S (%)
1
20
40
80
60
40
0
200
120
400
600
800
1000
tf — ICE(L)
VCC = 10V
Ta = 25˚C
10 4
50˚
10 3
60˚
70˚
80˚
90˚
10 3
10 2
RL = 1kΩ
500Ω
10
10 2
RL = 1kΩ
500Ω
10
100Ω
100Ω
1
1
10 –1
10 –2
10 –1
1
Collector photo current
2
1200
Wavelength λ (nm)
Ta (˚C )
VCC = 10V
Ta = 25˚C
10 4
tr (µs)
40
80
tr — ICE(L)
30˚
Rise time
60
Relative sensitivity
S (%)
80
0
Ambient temperature
40˚
100
VCE = 10V
Ta = 25˚C
20
Ta (˚C )
20˚
10 3
L (lx)
Spectral sensitivity characteristics
tf (µs)
10˚
10 2
10
Illuminance
100
10
10 –1
– 40
100
1
VCE (V)
VCE = 10V
L = 500 lx
T = 2856K
Directivity characteristics
0˚
10 –2
24
Relative sensitivity
ICE(L) (mA)
Collector photo current
10
0
20
ICE(L) — Ta
10 2
VCE = 10V
10 –2
– 20
16
Collector to emitter voltage
ICEO — Ta
10 2
12
Fall time
0
Ambient temperature
ICEO (µA)
VCE = 10V
Ta = 25˚C
T = 2856K
L = 1500 lx
100 lx
0
– 20
Dark current
ICE(L) — L
10 2
Collector photo current
ICE(L) (mA)
100
Collector photo current
PC (mW)
Collector power dissipation
20
ICE(L) (mA)
PC — Ta
120
10
10 2
ICE(L) (mA)
10 –1
10 –2
10 –1
1
Collector photo current
10
10 2
ICE(L) (mA)
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2001 MAR