Composite Transistors XN0431L (XN431L) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 3 ■ Basic Part Number Tr2 Overall 2 5° 1 0.50+0.10 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Rating VCBO 0 to 0.1 Symbol 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74 1.1+0.3 –0.1 10° Collector-base voltage (Emitter open) Collector current 6 0.30+0.10 –0.05 • UNR221L (UN221L) + UNR211L (UN211L) Parameter 5 2.8+0.2 –0.3 4 1.50+0.25 –0.05 • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.16+0.10 –0.06 0.65±0.15 ■ Features Tr1 Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 0.4±0.2 For switching/digital circuits 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: FI Internal Connection 4 5 6 Tr2 Tr1 3 2 1 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJJ00066BED 1 XN0431L ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 2.0 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ Unit V V µA 20 IC = 10 mA, IB = 0.3 mA Output voltage high level Max 0.25 4.9 V V 0.2 V Input resistance R1 −30% 4.7 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 − 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 −2.0 mA Forward current transfer ratio hFE VCE = −10 V, IC = −5 mA Collector-emitter saturation voltage VCE(sat) Conditions VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R 2 Transition frequency fT Typ − 0.25 0.8 Unit µA −4.9 −30% VCB = −10 V, IE = 2 mA, f = 200 MHz Max 20 IC = −10 mA, IB = − 0.3 mA Output voltage high level Input resistance Min V V − 0.2 V 4.7 +30% kΩ 1.0 1.2 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00066BED XN0431L Characteristics charts of Tr1 VCE(sat) IC Collector current IC (mA) 200 160 IB = 1.0 mA 0.8 mA 120 0.6 mA 80 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 1 000 Ta = 75°C 160 25°C 120 −25°C 80 40 1 10 100 1 000 Collector current IC (mA) VIN IO 100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 100 Collector current IC (mA) Cob VCB 5 10 VCE = 10 V 200 0 1 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 4 3 2 VO = 0.2 V Ta = 25°C 10 1 0.1 1 0 1 10 Collector-base voltage VCB (V) 100 0.01 0.1 1 10 100 Output current IO (mA) SJJ00066BED 3 XN0431L Characteristics charts of Tr2 VCE(sat) IC Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA −120 − 0.8 mA − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 –12 Collector-emitter saturation voltage VCE(sat) (V) −100 −1 − 0.01 −1 −10 −100 −1 000 Collector current IC (mA) f = 1 MHz IE = 0 Ta = 25°C −100 Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob −25°C 4 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJJ00066BED VCE = −10 V 200 160 120 80 Ta = 75°C 25°C −25°C 40 0 −1 −10 −100 Collector current IC (mA) VIN IO Collector-base voltage VCB (V) 4 Ta = 75°C 25°C − 0.1 Cob VCB 5 IC / IB = 10 −10 Collector-emitter voltage VCE (V) 6 hFE IC 240 Forward current transfer ratio hFE IC VCE −240 −100 −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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