ETC XN04404

Composite Transistors
XN04404 (XN4404)
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
+0.2
2.8 –0.3
+0.25
3
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–15
V
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
VCEO
–10
V
VEBO
–7
V
IC
– 0.5
A
Peak collector current
ICP
–1
A
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
Internal Connection
Parameter
Collector to base voltage
Tr1
1
2
5
4
■ Electrical Characteristics
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: CV
6
Storage temperature
+0.1
+0.1
0 to 0.05
0.4±0.2
■ Absolute Maximum Ratings
1.45±0.1
+0.1
4
0.1 to 0.3
Parameter
0.5 –0.05
2
0.16–0.06
0.95
5
0.95
+0.2
2.9 –0.05
+0.2
1.1–0.1
2SB0970(2SB970) × 2 elements
1.9±0.1
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
●
1
0.8
●
0.65±0.15
6
■ Features
●
1.5 –0.05
0.3 –0.05
0.65±0.15
Tr2
3
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = –10µA, IE = 0
–15
V
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–10
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
Collector cutoff current
ICBO
VCB = –10V, IE = 0
hFE1
VCE = –2V, IC = –500mA*
100
60
Forward current transfer ratio
– 0.1
µA
350
hFE2
VCE = –2V, IC = –1A*
Collector to emitter saturation voltage
VCE(sat)
IC = –400mA, IB = –8mA*
– 0.16
– 0.3
Base to emitter saturation voltage
VBE(sat)
IC = –400mA, IB = –8mA*
–0.8
–1.2
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
130
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
22
pF
V
V
*Pulse measurement
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN04404
PT — Ta
IC — VCE
500
VBE(sat) — IC
–100
–1.2
IC/IB=50
300
200
100
–9mA
–8mA
–7mA
–6mA
–0.8
–5mA
–0.6
–4mA
–3mA
–0.4
–2mA
–0.2
0
–1mA
80
120
160
0
Ambient temperature Ta (˚C)
–1
–3
–1
Ta=75˚C
–0.3
25˚C
–25˚C
–0.1
–0.03
–3
–10
Collector current IC (A)
Cob — VCB
Collector output capacitance Cob (pF)
80
f=1MHz
IE=0
Ta=25˚C
60
50
40
30
20
10
0
–1
–2 –3 –5
–10
25˚C
Ta=–25˚C
–1
75˚C
–0.3
–0.1
–0.03
–6
–20 –30 –50 –100
Collector to base voltage VCB (V)
Ta=75˚C
25˚C
300
–25˚C
200
100
0
–0.01 –0.03 –0.1 –0.3
–3
–10
fT — I E
200
500
400
–1
Collector current IC (A)
VCB=–10V
Ta=25˚C
VCE= –2V
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–10
70
–5
–3
hFE — IC
–30
–1
–4
600
IC/IB=50
–0.01
–0.01 –0.03 –0.1 –0.3
–3
–10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
–2
Transition frequency fT (MHz)
40
–30
–0.01
–0.01 –0.03 –0.1 –0.3
0
0
2
Base to emitter saturation voltage VBE(sat) (V)
IB=–10mA
–1.0
400
Collector current IC (A)
Total power dissipation PT (mW)
Ta=25˚C
160
120
80
40
0
–1
–3
Collector current IC (A)
–10
1
2
3
5
10
20 30 50
Emitter current IE (mA)
100
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2001 MAR