Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 –0.05 4 ■ Features 0.16+0.10 –0.06 5˚ For low-frequency amplification 1.1+0.2 –0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO 15 V Collector current IC 20 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Emitter (Tr2) 3: Collector (Tr2) EIAJ : SC-74 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ • 2SD1149 × 2 4: Base (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 4U Internal Connection 4 5 Tr2 3 6 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 100 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 100 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 15 V Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 1.0 µA hFE VCE = 10 V, IC = 2 mA 400 2 000 hFE(Small VCE = 4 V, IC = 5 mA 0.50 Forward current transfer ratio hFE ratio * Conditions Min Typ Max Unit 0.99 /Large) Collector-emitter saturation voltage Noise voltage Transition frequency VCE(sat) NV fT IC = 10 mA, IB = 1 mA 0.05 0.20 V VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 80 mV VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00091BED 1 XN05553 PT Ta IC VCE IC VBE 80 500 60 VCE = 10 V 200 IB = 100 µA 80 µA 60 µA 50 µA 40 µA 60 40 30 µA 20 µA 20 100 10 µA 0 80 120 160 0 2 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 1 25°C Ta = 75°C 0.1 −25°C 10 IE = 0 f = 1 MHz Ta = 25°C Noise voltage NV (mV) Collector output capacitance C (pF) (Common base, input open circuited) ob 25°C −25°C 900 600 300 1 3 2 10 1 10 Collector-base voltage VCB (V) 100 160 120 80 40 −1 −10 −100 NV VCE Rg = 100 kΩ 80 22 kΩ 5 kΩ 60 22 kΩ 40 5 kΩ 20 0 0.1 Collector current IC (mA) SJJ00091BED 2.0 100 60 0 0.01 1.6 Emitter current IE (mA) 20 1 1.2 VCB = 10 V Ta = 25°C 0 − 0.1 100 NV IC 100 V = 10 V CE GV = 80 dB Function = FLAT T = 25°C 80 a Rg = 100 kΩ 40 0.8 fT I E VCE = 10 V 1 200 0.4 200 Collector current IC (mA) 4 0 0 Base-emitter voltage VBE (V) Ta = 75°C 0 0.1 100 Cob VCB 5 20 0 12 1 500 Collector current IC (mA) 6 10 30 hFE IC 10 1 8 1 800 IC / IB = 10 0.01 0.1 6 −25°C 40 Collector-emitter voltage VCE (V) VCE(sat) IC 100 4 Transition frequency fT (MHz) 40 Ta = 75°C 10 Noise voltage NV (mV) 0 Ambient temperature Ta (°C) 2 Collector current IC (mA) 300 0 25°C 50 400 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 1 IC = 1 mA GV = 80 dB Function = FLAT Ta = 25°C 1 10 100 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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