Composite Transistors XP0111H (XP111H) Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR111H(UN111H) × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO –50 V VCEO –50 V IC –100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 0.2±0.1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 9X Internal Connection 1 Tr1 5 2 3 ■ Electrical Characteristics Parameter 4 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current *1 Tr2 ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA – 0.5 mA – 0.25 V Emitter cutoff current IEBO VEB = –6V, IC = 0 Forward current transfer ratio hFE VCE = –10V, IC = –5mA 30 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz 0.99 –4.9 V – 0.2 Transition frequency fT Input resistance R1 –30% 2.2 80 +30% Resistance ratio R1/R2 0.17 0.22 0.27 V MHz kΩ Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP0111H PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE –12 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 (V) –3 –100 Input voltage VIN (V) Collector output capacitance Cob (pF) –30 –100 –300 –1000 4 3 2 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 Collector to base voltage –30 –100 VCB (V) –0.01 –0.1 –0.3 –1 –3 VCE= –10V –10 –30 Output current IO (mA) 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) (mA) VIN — IO f=1MHz IE=0 Ta=25˚C 5 –10 Collector current IC Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 2 hFE — IC –100 –100 –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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