ETC XP01507

Composite Transistors
XP01507 (XP1507)
Silicon NPN epitaxial planer transistor
Unit: mm
0.2±0.05
High breakdown voltage and for low noise amplification
2.1±0.1
1
2
1.25±0.1
0.425
5
3
4
+0.05
0.9± 0.1
2SD0814(2SD814) × 2 elements
0 to 0.1
●
0.7±0.1
■ Basic Part Number of Element
0.12 – 0.02
0.2
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.0±0.1
●
0.65
■ Features
0.65
0.425
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
VCEO
150
V
VEBO
5
V
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 4O
IC
50
mA
Peak collector current
ICP
100
mA
Total power dissipation
PT
150
mW
1
Overall Junction temperature
Tj
150
˚C
2
Tstg
–55 to +150
˚C
Storage temperature
Internal Connection
3
■ Electrical Characteristics
Parameter
*1
0.2±0.1
Tr1
Tr2
5
4
(Ta=25˚C)
Symbol
Conditions
min
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
150
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Collector cutoff current
ICBO
VCB = 100V, IE = 0
typ
max
Unit
V
V
1
µA
Forward current transfer ratio
hFE
VCE = 5V, IC = 10mA
90
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = 5V, IC = 10mA
0.5
450
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
150
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2.3
pF
0.99
1
V
Ratio between 2 elements
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XP01507
PT — Ta
IC — VCE
IC — VBE
120
250
120
100
150
100
50
60
0.6mA
0.4mA
40
0.2mA
20
20
40
60
2
VCE(sat) — IC
3
1
Ta=75˚C
0.1
–25˚C
0.03
1
0.3
3
10
30
100
Collector current IC (mA)
Collector output capacitance Cob (pF)
5
f=1MHz
IE=0
Ta=25˚C
4
3
2
1
0
2
3
5
10
20 30 50
100
Collector to base voltage VCB (V)
2
6
8
10
12
0
0.4
0.8
1.2
400
Ta=75˚C
25˚C
200
–25˚C
100
0
0.1
0.3
1
3
2.0
fT — I E
500
300
1.6
Base to emitter voltage VBE (V)
200
10
Collector current IC
Cob — VCB
1
40
VCB=10V
Ta=25˚C
VCE=10V
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
10
0.01
0.1
4
600
IC/IB=10
25˚C
60
hFE — IC
30
0.3
80
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C)
100
–25˚C
0
0
80 100 120 140 160
Transition frequency fT (MHz)
0
Ta=75˚C
20
0
0
25˚C
100
IB=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
80
VCE=10V
Collector current IC (mA)
200
Collector current IC (mA)
Total power dissipation PT (mW)
Ta=25˚C
30
(mA)
100
160
120
80
40
0
–1
–2 –3 –5
–10
–20 –30 –50
Emitter current IE (mA)
–100
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2001 MAR