Composite Transistors XP0411M (XP411M) Silicon PNP epitaxial planar transistor 0.2±0.05 5 6 Unit: mm (0.425) For digital circuits 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number of Element • UNR111M (UN111M) × 2 elements 0.9±0.1 Symbol Rating Unit Collector to base voltage Parameter VCBO −50 V of Collector to emitter voltage VCEO −50 V element Collector current IC −100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Rating Total 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: EA Internal Connection 6 5 4 Tr1 Tr2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min 2 Typ 3 Max Unit Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emittter voltage VCEO IC = −2 mA, IB = 0 −50 V Collector cutoff current ICBO VCB = −50 V, IE = 0 − 0.1 ICEO VCE = −50 V, IB = 0 − 0.5 Emitter cutoff current IEBO VEB = −6 V, IC = 0 DC current gain hFE VCE = −10 V, IC = −5 mA Collector to emitter saturation voltage VCE(sat) VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ Low level output voltage VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ R1 Resistance ratio R1 / R2 Gain bandwidth product fT mA 80 IC = −10 mA, IB = − 0.3 mA High level output voltage Input resistance − 0.2 µA − 0.25 −4.9 −30% V V 2.2 − 0.2 V +30% kΩ 0.047 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) The part number in the parenthesis shows conventional part number. Publication date: July 2002 SJJ00239BED 1 XP0411M IC VCE Total power dissipation PT (mW) Collector current IC (mA) 200 150 100 − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA 0 20 40 60 80 100 120 140 160 0 120 80 40 −10 −30 −100 −300 −1 000 Collector current IC (mA) −6 1 0 Input voltage VIN (V) −12 −5 −10 −15 −20 −25 −30 −35 −40 Collector to base voltage VCB (V) −10 −3 −1 − 0.3 − 0.1 − 0.03 −10 −10 3 VO = − 0.2 V Ta = 25°C −3 25°C −25°C − 0.01 −1 −3 −30 −10 −30 −100 −300 −1 000 Collector current IC (mA) IO VIN −1 000 VO = −5 V Ta = 25°C −100 −30 − 0.01 −1 −8 f = 1 MHz Ta = 25°C VIN IO −100 Ta = 75°C −1 − 0.03 Output current IO (mA) Collector output capacitance Cob (pF) DC current gain hFE −4 VCE = −10 V 25°C −3 −3 Cob VCB −25°C 0 −1 −2 10 160 −10 − 0.1 hFE IC Ta = 75°C −30 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 200 IC / IB = 33.3 − 0.3 50 0 −100 Ta = 25°C IB = −1.0 mA − 0.9 mA −120 − 0.8 mA − 0.7 mA −100 0 −100 Output current IO (mA) 2 VCE(sat) IC −140 Collector to emitter saturation voltage VCE(sat) (V) PT Ta 250 SJJ00239BED −10 −1 − 0.1 0 − 0.5 −1.0 −1.5 −2.0 Input voltage VIN (V) −2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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