ETC 2N6387/D

ON Semiconductor
2N6387
2N6388*
Plastic Medium-Power
Silicon Transistors
*ON Semiconductor Preferred Device
. . . designed for general–purpose amplifier and low–speed
switching applications.
DARLINGTON
8 AND 10 AMPERE
NPN SILICON
POWER TRANSISTORS
60–80 VOLTS
65 WATTS
• High DC Current Gain —
•
•
•
•
hFE = 2500 (Typ) @ IC
= 4.0 Adc
Collector–Emitter Sustaining Voltage – @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6387
= 80 Vdc (Min) — 2N6388
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc — 2N6387, 2N6388
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
TO–220AB Compact Package
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*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
2N6387
2N6388
Unit
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
Collector Current — Continuous
Peak
Base Current
IB
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD
Total Power Dissipation
@ TA = 25C
Derate above 25C
PD
Operating and Storage Junction,
Temperature Range
5.0
IC
10
15
TJ, Tstg
CASE 221A–09
TO–220AB
Vdc
10
15
Adc
250
mAdc
65
0.52
Watts
W/C
2.0
0.016
Watts
W/C
–65 to +150
C
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristics
RθJC
1.92
C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N6387/D
PD, POWER DISSIPATION (WATTS)
2N6387 2N6388
TA
4.0
TC
80
3.0
60
TC
2.0
40
1.0
20
0
TA
0
20
40
60
80
100
T, TEMPERATURE (°C)
Figure 1. Power Derating
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120
140
160
2N6387 2N6388
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
—
—
—
1.0
1.0
—
—
—
—
300
300
3.0
3.0
—
5.0
1000
100
20,000
—
—
—
2.0
3.0
—
—
2.8
4.5
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
2N6387
2N6388
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N6387
2N6388
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE – 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C)
2N6387
2N6388
2N6387
2N6388
Vdc
ICEO
mAdc
µAdc
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 1 0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
hFE
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
2N6387, 2N6388
2N6387, 2N6388
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
—
VCE(sat)
Vdc
VBE(on)
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
|hfe|
20
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
200
pF
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
1000
—
—
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
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3
2N6387 2N6388
D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
RC
SCOPE
TUT
RB
V1
3.0
APPROX
+ 12 V
0
51
V2
APPROX
8.0 k
120
tr, tf 10 ns
DUTY CYCLE = 1.0%
ts
tf
1.0
0.7
0.3
0.2
- 4.0 V
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
25 µs
-8V
D1
t, TIME (s)
µ
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
7.0
5.0
VCC
+ 30 V
0.1
0.07
0.1
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.3
0.2
0.1
0.07
0.05
0.01
0.01
5.0
Figure 3. Switching Times
D = 0.5
0.2
0.1
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.5
2.0
1.0
IC, COLLECTOR CURRENT (AMPS)
0.2
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
td
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
Figure 4. Thermal Response
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4
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
10
2N6387 2N6388
20
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
IC, COLLECTOR CURRENT (AMPS)
10 µs
5.0
50 µs
1 ms
dc
2.0
50 ms
1.0
5 ms
TJ = 150°C
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 100°C
SECOND BREAKDOWN LIMITED
0.2
0.1
CURVES APPLY BELOW RATED VCEO
0.03
1.0
2N6387
2N6388
2.0
4.0 6.0
40
60
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80
Figure 5. Active-Region Safe Operating Area
300
5000
3000
2000
200
TJ = 25°C
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
10
Cob
100
Cib
70
50
1.0
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
30
0.1
500 1000
0.2
1.0 2.0
5.0 10
20
0.5
VR, REVERSE VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE = 4.0 V
10,000
5000
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
300
200
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
100
Figure 7. Capacitance
Figure 6. Small–Signal Current Gain
20,000
50
5.0 7.0 10
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
Figure 8. DC Current Gain
0.5 0.7
1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
Figure 9. Collector Saturation Region
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5
20 30
2N6387 2N6388
3.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
+ 5.0
V, VOLTAGE (VOLTS)
TJ = 25°C
+ 4.0
+ 3.0
2.5
*IC/IB ≤
[email protected] 4.0V
3
25°C to 150°C
+ 2.0
+ 1.0
2.0
1.5
1.0
0.5
0.1
VBE(sat) @ IC/IB = 250
- 2.0
- 3.0
VCE(sat) @ IC/IB = 250
0.5 0.7
*θVC for VCE(sat)
-55°C to 25°C
- 1.0
VBE @ VCE = 4.0 V
0.2 0.3
0
θVB for VBE
25°C to 150°C
-55°C to 25°C
- 4.0
1.0
2.0 3.0
- 5.0
0.1
5.0 7.0 10
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (A)
µ
105
104
103
102
REVERSE
FORWARD
COLLECTOR
VCE = 30 V
BASE
TJ = 150°C
101
100
8.0 k
120
100°C
25°C
10-1
-0.6 -0.4 -0.2
0
+0.2 +0.4
+0.6 +0.8
+1.0
EMITTER
+1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
Figure 13. Darlington Schematic
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2N6387 2N6388
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
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7
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
2N6387 2N6388
ON Semiconductor and
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