ETC 6AM12

6AM12
Silicon N Channel/P Channel Complementary Power MOS FET Array
Application
SP-12TA
High speed power switching
Features
• Low on-resistance
N-channel: RDS (on) ≤ 0.17 Ω, VGS = 10 V
ID = 4 A
P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V
ID = –4 A
• Capable of 4 V gate drive
• Low drive current
• Hight speed switching
• High density mounting
• Suitable for H-bridged motor driver
• Discrete packaged devices of same die
N-channel: 2SK970 (TO-220AB),
2SK1093 (TO-220FM)
P-channel: 2SJ172 (TO-220AB),
2SJ175 (TO-220FM)
1
: Nch Source
2, 8, 9 : Nch Gate
3, 7,10 : Nch Drain
: Pch Drain
4, 6,11 : Pch Gate
5, 12 : Pch Source
1
12
5
12
Pch
4
6
11
3
7
8
9
10
Nch
2
1
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
–––––––––––––––––––––
Nch
Pch
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
–60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
±20
V
———————————————————————————————————————————
Drain current
ID
7
–7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
28
–28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
7
–7
A
———————————————————————————————————————————
Channel dissipation
Pch (Tc =25°C)**
42
W
———————————————————————————————————————————
Channel dissipation
Pch**
4.8
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
**
PW ≤ 10 µs, duty cycle ≤ 1 %
6 devices operation
6AM12
Table 2 Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol
N channel
P channel
—————————————————
Min Typ Max Min Typ Max
Unit
Test Conditions
———————————————————————————————————————————
Drain to source
breakdown voltage
V(BR)DSS 60
—
—
–60
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source
breakdown voltage
V(BR)GSS ±20
—
—
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source
leak current
IGSS
—
—
±10
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage
drain current
IDSS
—
—
250
—
—
–250
µA
VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source
cutoff voltage
VGS(off)
1.0
—
2.0
–1.0
—
–2.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to
source on state
resistance
RDS(on)
—
0.13 0.17 —
0.15 0.2
Ω
ID = 4 A, VGS = 10 V *
—————————————————————————————————
—
0.19 0.24 —
0.20 0.27 Ω
ID = 4 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer
admittance
|yfs|
3.5
5.5
—
3.5
6.0
—
S
ID = 4 A *VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
400
—
—
900
—
pF
VDS = 10 V, VGS = 0
———————————————————————————————— f = 1 MHz
Output capacitance
Coss
—
220
—
—
460
—
pF
————————————————————————————————
Reverse transfer
capacitance
Crss
—
60
—
—
130
—
pF
———————————————————————————————————————————
Turn–on delay time
td(on)
—
tr
—
5
—
—
8
—
ns
ID = 4 A, VGS = 10 V,
———————————————————————————————— RL = 7.5 Ω
Rise time
45
—
—
50
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
150
—
—
170
—
ns
————————————————————————————————
Fall time
tf
—
80
—
—
95
—
ns
———————————————————————————————————————————
Body–drain diode
forward voltage
VDF
—
1.1
—
—
–1.05 —
V
IF = 7 A, VGS = 0
———————————————————————————————————————————
Body–drain diode
trr
reverse recovery time
—
110
—
—
180
—
ns
IF = 7 A, VGS = 0,
dIF/dt = 50 A/µs
———————————————————————————————————————————
Note: Polarity of test conditions for P channel device is reversed.
* Pulse Test
■ Nch : See characteristic curves of 2SK970
■ Pch : See characteristic curves of 2SJ172
6AM12
Maximum Channel Dissipation Curve
Maximum Channel Dissipation Curve
60
6
Condition : Channel dissipation of
each die is identical
Channel Dissipation Pch (W)
6 Device Operation
5
Channel Dissipation Pch (W)
Condition : Channel dissipation of
each die is identical
4 Device Operation
4
2 Device Operation
1 Device Operation
3
2
6 Device Operation
4 Device Operation
40
2 Device Operation
1 Device Operation
20
1
0
25
50
75
100
125
0
150
Ambient Temperature Ta (°C)
0
pe
(1
ra
sh
tio
)
n
ot
Drain Current I D (A)
O
–1
c
(T
=
°C
25
– 0.3
µs
C
–3
s
n
tio
0.3
Operation in this area
is limited by RDS (on)
D
m
)
ra
1
s
10
ot
m
=
sh
1
PW
s
m
pe
O
(1
150
10 µs
– 10
µs
1
C
Drain Current I D (A)
– 50
– 30
m
s
D
3
125
10
0
10
100
µs
10
=
75
Maximum Safe Operation Area
(P-channel)
10
50
30
PW
50
Case Temperature Ta (°C)
Maximum Safe Operation Area
(N-channel)
10
25
(T
c
Operation in this area
is limited by RDS (on)
=
25
°C
)
)
0.1
0.05
0.1
Ta = 25°C
Ta = 25°C
0.3
– 0.1
1
3
10
30
Drain to Source Voltage VDS (V)
100
– 0.05
– 0.1
– 0.3
–1
–3
– 10
– 30
Drain to Source Voltage VDS (V)
– 100