ETC 74HCT1G00GW/T1

INTEGRATED CIRCUITS
DATA SHEET
74AHC1G00; 74AHCT1G00
2-input NAND gate
Product specification
Supersedes data of 1998 Nov 25
File under Integrated Circuits, IC06
1999 Jan 27
Philips Semiconductors
Product specification
2-input NAND gate
FEATURES
• Symmetrical output impedance
• High noise immunity
74AHC1G00; 74AHCT1G00
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
TYPICAL
SYMBOL
PARAMETER
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
tPHL/tPLH
propagation delay
inA, inB to outY
CI
• Low power dissipation
CPD
CONDITIONS
UNIT
AHC1G
• Balanced propagation delays
3.5
3.6
ns
input capacitance
1.5
1.5
pF
power dissipation
capacitance
notes 1 and 2; 17
CL = 50 pF;
f = 1 MHz
18
pF
• Very small 5-pin package
• Output capability: standard.
CL = 15 pF
VCC = 5 V
AHCT1G
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:
DESCRIPTION
fi = input frequency in MHz;
The 74AHC1G/AHCT1G00 is a
high-speed Si-gate CMOS device.
fo = output frequency in MHz;
CL = output load capacitance in pF;
The 74AHC1G/AHCT1G00 provides
the 2-input NAND function.
VCC = supply voltage in V.
2. The condition is VI = GND to VCC.
FUNCTION TABLE
See note 1.
INPUTS
PINNING
OUTPUT
PIN
SYMBOL
DESCRIPTION
inA
inB
outY
1
inB
data input
L
L
H
2
inA
data input
GND
ground (0 V)
L
H
H
3
H
L
H
4
outY
data output
H
H
L
5
VCC
DC supply voltage
Note
1. H = HIGH voltage level.
L = LOW voltage level.
ORDERING AND PACKAGE INFORMATION
PACKAGES
TYPE NUMBER
74AHC1G00GW
74AHCT1G00GW
1999 Jan 27
TEMPERATURE
RANGE
−40 to +85 °C
PINS
PACKAGE
MATERIAL
CODE
MARKING
5
SC-88A
plastic
SOT353
AA
5
SC-88A
plastic
SOT353
CA
2
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
handbook, halfpage
inB 1
inA 2
GND
5 VCC
handbook, halfpage
00
3
4
outY
1
inB
2
inA
outY
4
MNA097
MNA096
Fig.1 Pin configuration.
handbook, halfpage
1
Fig.2 Logic symbol.
handbook, halfpage
inB
&
4
outY
2
inA
MNA098
MNA099
Fig.3 IEC logic symbol.
1999 Jan 27
Fig.4 Logic diagram.
3
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
RECOMMENDED OPERATING CONDITIONS
74AHC1G
SYMBOL
PARAMETER
74AHCT1G
CONDITIONS
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
DC supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
−
5.5
0
−
5.5
V
VO
output voltage
0
−
VCC
0
−
VCC
V
Tamb
operating ambient
temperature range
see DC and AC
characteristics per
device
−40
+25
+85
−40
+25
+85
°C
tr,tf (∆t/∆f)
input rise and fall times
except for
Schmitt-trigger inputs
VCC = 3.3 V ±0.3 V
−
−
100
−
−
−
ns/V
VCC = 5 V ±0.5 V
−
−
20
−
−
20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
−0.5
+7.0
V
VI
input voltage range
−0.5
+7.0
V
IIK
DC input diode current
VI < −0.5
−
−20
mA
IOK
DC output diode current
VO < −0.5 or VO > VCC + 0.5 V; note 1
−
±20
mA
IO
DC output source or sink current
−0.5 V < VO < VCC + 0.5 V
−
±25
mA
ICC
DC VCC or GND current
−
±75
mA
Tstg
storage temperature range
−65
+150
°C
PD
power dissipation per package
−
200
mW
temperature range: −40 to +85 °C;
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above +55 °C the value of PD derates linearly with 2.5 mW/K.
1999 Jan 27
4
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
DC CHARACTERISTICS
Family 74AHC1G
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
VIL
VOH
VOH
VOL
VOL
−40 to +85
+25
OTHER
VIH
Tamb (°C)
HIGH-level input
voltage
LOW-level input voltage
VCC (V)
MIN.
TYP.
MAX.
MIN.
MAX.
2.0
1.5
−
−
1.5
−
3.0
2.1
−
−
2.1
−
5.5
3.85
−
−
3.85
−
2.0
−
−
0.5
−
0.5
3.0
−
−
0.9
−
0.9
5.5
−
−
1.65
−
1.65
2.0
1.9
2.0
−
1.9
−
3.0
2.9
3.0
−
2.9
−
HIGH-level output
voltage; all outputs
VI = VIH or VIL;
IO = −50 µA
4.5
4.4
4.5
−
4.4
−
HIGH-level output
voltage
VI = VIH or VIL;
IO = −4.0 mA
3.0
2.58
−
−
2.48
−
VI = VIH or VIL;
IO = −8.0 mA
4.5
3.94
−
−
3.8
−
VI = VIH or VIL;
IO = 50 µA
2.0
−
0
0.1
−
0.1
3.0
−
0
0.1
−
0.1
4.5
−
0
0.1
−
0.1
VI = VIH or VIL;
IO = 4 mA
3.0
−
−
0.36
−
0.44
VI = VIH or VIL;
IO = 8 mA
4.5
−
−
0.36
−
0.44
LOW-level output
voltage; all outputs
LOW-level output
voltage
UNIT
V
V
V
V
V
V
II
input leakage current
VI = VCC or GND
5.5
−
−
0.1
−
1.0
µA
ICC
quiescent supply
current
VI = VCC or GND; 5.5
IO = 0
−
−
1.0
−
10
µA
CI
input capacitance
−
1.5
10
−
10
pF
1999 Jan 27
5
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
Family 74AHCT1G
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
Tamb (°C)
PARAMETER
−40 to +85
+25
OTHER
VCC (V)
MIN.
TYP.
MAX.
MIN.
MAX.
UNIT
VIH
HIGH-level input voltage
4.5 to 5.5
2.0
−
−
2.0
−
V
VIL
LOW-level input voltage
4.5 to 5.5
−
−
0.8
−
0.8
V
VOH
HIGH-level output
voltage; all outputs
VI = VIH or VIL;
IO = −50 µA
4.5
4.4
4.5
−
4.4
−
V
VOH
HIGH-level output
voltage
VI = VIH or VIL;
IO = −8.0 mA
4.5
3.94
−
−
3.8
−
V
VOL
LOW-level output
voltage; all outputs
VI = VIH or VIL;
IO = 50 µA
4.5
−
0
0.1
−
0.1
V
VOL
LOW-level output voltage VI = VIH or VIL;
IO = 8 mA
4.5
−
−
0.36
−
0.44
V
II
input leakage current
VI = VIH or VIL
5.5
−
−
0.1
−
1.0
µA
ICC
quiescent supply current
VI = VCC or GND;
IO = 0
5.5
−
−
1.0
−
10
µA
∆ICC
additional quiescent
supply current per input
pin
VI = 3.4 V
other inputs at
VCC or GND; IO = 0
5.5
−
−
1.35
−
1.5
mA
CI
input capacitance
−
1.5
10
−
10
pF
1999 Jan 27
6
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
AC CHARACTERISTICS
Type 74AHC1G00
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
SYMBOL
Tamb (°C)
PARAMETER
−40 to +85
+25
WAVEFORMS
CL
VCC (V)
MIN.
TYP.
MAX.
MIN.
MAX.
UNIT
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
15 pF 3.0 to 3.6
−
4.5(1)
7.9
1.0
9.5
ns
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
50 pF 3.0 to 3.6
−
6.5(1)
11.4
1.0
13.0
ns
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
15 pF 4.5 to 5.5
−
3.5(2)
5.5
1.0
6.5
ns
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
50 pF 4.5 to 5.5
−
4.9(2)
7.5
1.0
8.5
ns
Notes
1. Typical values at VCC = 3.3 V.
2. Typical values at VCC = 5.0 V.
Type 74AHCT1G00
GND = 0 V; tr = tf ≤ 3.0 ns.
Tamb (°C)
TEST CONDITIONS
SYMBOL
−40 to +85
+25
PARAMETER
WAVEFORMS
CL
VCC (V)
MIN.
TYP.
MAX.
MIN.
UNIT
MAX.
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
15 pF 4.5 to 5.5
−
3.6(1)
6.9
1.0
8.0
ns
tPHL/tPLH
propagation delay
inA, inB to outY
see Figs 5 and 6
50 pF 4.5 to 5.5
−
5.0(1)
7.9
1.0
9.0
ns
Note
1. Typical values at VCC = 5.0 V.
1999 Jan 27
7
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
AC WAVEFORMS
handbook, halfpage
inA, inB INPUT
VM(1)
tPHL
outY OUTPUT
VCC
handbook, halfpage
PULSE
GENERATOR
tPLH
VI
VO
D.U.T.
RT
VM(1)
CL
MNA101
MNA100
FAMILY
VI INPUT
REQUIREMENTS
VM
INPUT
VM
OUTPUT
AHC1G
GND to VCC
50% VCC 50% VCC
AHCT1G
GND to 3.0 V
1.5 V
Fig.5
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance (see
Chapter “AC characteristics”).
RT = Termination resistance should be equal to the output
impedance Z0 of the pulse generator.
50% VCC
The input (inA, inB) to output (outY)
propagation delays.
1999 Jan 27
Fig.6 Load circuitry for switching times.
8
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
E
B
y
X
A
HE
5
v M A
4
Q
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E (2)
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT353
1999 Jan 27
REFERENCES
IEC
JEDEC
EIAJ
SC-88A
9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
SOLDERING
Introduction to soldering surface mount packages
• For packages with leads on two sides and a pitch (e):
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
1999 Jan 27
10
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, SMS
not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 27
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
245002/00/02/pp12
Date of release: 1999 Jan 27
Document order number:
9397 750 04941