BAT54XV2T1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE THERMAL CHARACTERISTICS Characteristic http://onsemi.com 2 ANODE Symbol Max Unit PD 200 mW 1.57 mW/°C MARKING DIAGRAM RJA 635 °C/W JVd TJ, Tstg 150 °C 1 PLASTIC SOD−523 CASE 502 1. FR−4 Minimum Pad JV d = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping BAT54XV2T1 SOD−523 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 August, 2003 − Rev. 1 1 Publication Order Number: BAT54XV2T1/D BAT54XV2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF − 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF − 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr − − 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF − 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF − 0.35 0.40 Vdc Forward Current (DC) IF − − 200 mAdc Repetitive Peak Forward Current IFRM − − 300 mAdc Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM − − 600 mAdc Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 2 BAT54XV2T1 820 +10 V 2k 0.1 F t IF 100 H tp r 0.1 F IF t trr 10% t DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 1.0 IR, REVERSE CURRENT (A) 10 1 50°C 1 25°C 85°C 25°C 0.1 0.0 0.1 0.2 −40°C 0.3 −55°C 0.4 0.5 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 0.001 0.6 TA = 25°C 0 5 10 Figure 2. Forward Voltage 12 10 8 6 4 2 0 5 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 100 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 25 30 BAT54XV2T1 PACKAGE DIMENSIONS SOD−523 PLASTIC PACKAGE CASE 502−01 ISSUE O −X− A −Y− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. B D 2 PL 0.08 (0.003) M T X Y DIM A B C D J K S C K J S MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM 0.047 0.032 0.024 0.012 0.0055 0.008 0.063 MAX 0.051 0.035 0.028 0.014 0.0079 0.010 0.067 −T− SEATING PLANE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800−282−9855 Toll Free USA/Canada http://onsemi.com 4 BAT54XV2T1/D