ETC BC517/D

Darlington Transistors
BC517
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
30
Vdc
Collector–Base Voltage
VCB
40
Vdc
Emitter–Base Voltage
VEB
10
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
625
12
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR 1
BASE
2
EMITTER 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, VBE = 0)
V(BR)CES
30
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
40
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
V(BR)EBO
10
—
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
ICES
—
—
500
nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
—
100
nAdc
OFF CHARACTERISTICS
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 1
1
Publication Order Number:
BC517/D
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Typ
Max
Unit
hFE
30,000
—
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
—
1.0
Vdc
Base–Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
—
—
1.4
Vdc
fT
—
200
—
MHz
Characteristic
ON
CHARACTERISTICS(1)
DC Current Gain
(IC = 20 mAdc, VCE = 2.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width 2.0%.
2. fT = |hfe| • ftest
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
200
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
500
100
10 µA
50
100 µA
20
IC = 1.0 mA
10
5.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 µA
0.1
0.07
0.05
10 µA
0.03
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
0.02
10 20
50 100 200
14
200
IC = 10 µA
70
50
100 µA
30
20
10
1.0 mA
1.0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
50k 100k
Figure 3. Noise Current
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
10
10 µA
8.0
100 µA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
0
1.0
1000
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
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3
500 1000
BC517
SMALL–SIGNAL CHARACTERISTICS
4.0
|h fe |, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 25°C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
hFE, DC CURRENT GAIN
TJ = 125°C
100k
70k
50k
25°C
30k
20k
10k
7.0k
5.0k
-55°C
3.0k
2.0k
5.0 7.0
10
VCE = 5.0 V
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
5.0 7.0
10
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 9. Collector Saturation Region
1.6
0.6
2.0
3.0
Figure 8. DC Current Gain
0.8
1.0
Figure 7. High Frequency Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
200k
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
-1.0
-2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RVC FOR VCE(sat)
-55°C TO 25°C
-3.0
25°C TO 125°C
-4.0
VB FOR VBE
-5.0
-55°C TO 25°C
-6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
SINGLE PULSE
0.05
0.1
0.07
0.05
SINGLE PULSE
0.03
ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t)
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10k
Figure 12. Thermal Response
1.0k
700
500
IC, COLLECTOR CURRENT (mA)
()
RESISTANCE (NORMALIZED)
BC517
300
200
FIGURE A
1.0 ms
TA = 25°C
tP
TC = 25°C
100 µs
PP
1.0 s
100
70
50
PP
t1
30
20
10
0.4 0.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1/f
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
t
DUTYCYCLE t1f 1
tP
PEAK PULSE POWER = PP
40
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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5
BC517
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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6
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
BC517
Notes
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7
BC517
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BC517/D