ETC BC546/D

Amplifier Transistors
BC546, B
BC547, A, B, C
BC548, A, B, C
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC546
BC547
BC548
Unit
Collector–Emitter Voltage
VCEO
65
45
30
Vdc
Collector–Base Voltage
VCBO
80
50
30
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
–55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(IC = 100 µAdc)
BC546
BC547
BC548
V(BR)CBO
80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(IE = 10 A, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
—
—
—
—
—
—
V
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 2
ICES
BC546
BC547
BC548
BC546/547/548
1
µA
Publication Order Number:
BC546/D
BC546, B BC547, A, B, C BC548, A, B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
—
—
—
0.09
0.2
0.3
0.25
0.6
0.6
—
0.7
—
0.55
—
—
—
0.7
0.77
150
150
150
300
300
300
—
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
hFE
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
—
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC546
BC547
BC548
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
—
1.7
4.5
pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
—
10
—
pF
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
—
—
—
2.0
2.0
2.0
10
10
10
Small–Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k,
f = 1.0 kHz, ∆f = 200 Hz)
hfe
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
—
NF
BC546
BC547
BC548
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.
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2
dB
BC546, B BC547, A, B, C BC548, A, B, C
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
1.0
20
2.0
5.0 10
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
0.8
IC = 50 mA
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
50 70 100
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
100
Figure 4. Base–Emitter Temperature Coefficient
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
BC547/BC548
Figure 5. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 6. Current–Gain – Bandwidth Product
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3
50
BC546, B BC547, A, B, C BC548, A, B, C
BC547/BC548
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
1.0
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
50
100
200
50
100
200
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
5.0
10
20
-1.0
-1.4
-1.8
θVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
Figure 9. Collector Saturation Region
0.2
0.5
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC546
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
40
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
Cob
4.0
2.0
0.1
0.2
0.5
5.0
1.0 2.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
50
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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4
BC546, B BC547, A, B, C BC548, A, B, C
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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5
BC546, B BC547, A, B, C BC548, A, B, C
Notes
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6
BC546, B BC547, A, B, C BC548, A, B, C
Notes
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7
BC546, B BC547, A, B, C BC548, A, B, C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BC546/D