ETC BC559/D

Low Noise Transistors
BC559, B, C
BC560C
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC559
BC560
Unit
Collector–Emitter Voltage
VCEO
–30
–45
Vdc
Collector–Base Voltage
VCBO
–30
–50
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
–55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
200
°C/W
Thermal Resistance, Junction to Case
RJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
–30
–45
—
—
—
—
–30
–50
—
—
—
—
–5.0
—
—
Vdc
—
—
—
—
–15
–5.0
nAdc
µAdc
—
—
–15
nAdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 µAdc, IE = 0)
V(BR)CEO
BC559
BC560
V(BR)CBO
BC559
BC560
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = +125°C)
ICBO
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0)
IEBO
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 2
Vdc
1
Vdc
Publication Order Number:
BC559/D
BC559, B, C BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
100
100
180
380
120
150
270
290
500
—
—
—
460
800
800
—
—
—
–0.075
–0.3
–0.25
–0.25
–0.6
—
—
–1.1
—
—
—
–0.55
–0.52
–0.55
–0.62
—
—
–0.7
fT
—
250
—
MHz
Ccbo
—
2.5
—
pF
240
450
330
600
500
900
—
—
0.5
—
2.0
10
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
hFE
BC559B
BC559C/560C
BC559B
BC559C/560C
BC559
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see note 1)
(IC = –100 mAdc, IB = –5.0 mAdc, see note 2)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = –10 µAdc, VCE = –5.0 Vdc)
(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
—
Vdc
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz)
hfe
BC559B
BC559C/BC560C
Noise Figure
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz)
NOTES:
1. IB is value for which IC = –11 mA at VCE = –1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
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2
—
dB
NF1
NF2
BC559, B, C BC560C
-1.0
VCE = -10 V
TA = 25°C
1.5
-0.9
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5
0
-0.1
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-50
-100
Figure 2. “Saturation” and “On” Voltages
10
400
300
7.0
100
80
60
C, CAPACITANCE (pF)
200
VCE = -10 V
TA = 25°C
40
30
TA = 25°C
Cib
5.0
3.0
Cob
2.0
20
-0.5 -0.7 -1.0
-2.0
-5.0 -7.0 -10
-20
IC, COLLECTOR CURRENT (mAdc)
1.0
-0.4 -0.6
-50
-1.0
-2.0
-4.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Current–Gain — Bandwidth Product
r b, BASE SPREADING RESISTANCE (OHMS)
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
TA = 25°C
-0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
Figure 4. Capacitance
170
160
150
VCE = -10 V
f = 1.0 kHz
TA = 25°C
140
130
120
-0.1
-0.2
-0.5
-1.0
-2.0
IC, COLLECTOR CURRENT (mAdc)
-5.0
Figure 5. Base Spreading Resistance
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3
-10
-20
-40
BC559, B, C BC560C
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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BC559/D