Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector–Emitter Voltage VCEO –30 –45 Vdc Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg –55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit –30 –45 — — — — –30 –50 — — — — –5.0 — — Vdc — — — — –15 –5.0 nAdc µAdc — — –15 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –30 Vdc, IE = 0, TA = +125°C) ICBO Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 February, 2001 – Rev. 2 Vdc 1 Vdc Publication Order Number: BC559/D BC559, B, C BC560C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 100 180 380 120 150 270 290 500 — — — 460 800 800 — — — –0.075 –0.3 –0.25 –0.25 –0.6 — — –1.1 — — — –0.55 –0.52 –0.55 –0.62 — — –0.7 fT — 250 — MHz Ccbo — 2.5 — pF 240 450 330 600 500 900 — — 0.5 — 2.0 10 ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C BC559 Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see note 1) (IC = –100 mAdc, IB = –5.0 mAdc, see note 2) VCE(sat) Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –10 µAdc, VCE = –5.0 Vdc) (IC = –100 µAdc, VCE = –5.0 Vdc) (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) — Vdc Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz) hfe BC559B BC559C/BC560C Noise Figure (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –200 µAdc, VCE = –5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz) NOTES: 1. IB is value for which IC = –11 mA at VCE = –1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. http://onsemi.com 2 — dB NF1 NF2 BC559, B, C BC560C -1.0 VCE = -10 V TA = 25°C 1.5 -0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 0 -0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. “Saturation” and “On” Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = -10 V TA = 25°C 40 30 TA = 25°C Cib 5.0 3.0 Cob 2.0 20 -0.5 -0.7 -1.0 -2.0 -5.0 -7.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 -1.0 -2.0 -4.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current–Gain — Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 Figure 4. Capacitance 170 160 150 VCE = -10 V f = 1.0 kHz TA = 25°C 140 130 120 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 -10 -20 -40 BC559, B, C BC560C PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. 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