ETC BC635/D

BC635, BC637, BC639
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
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Rating
Symbol
BC635
BC637
BC639
Unit
Collector – Emitter Voltage
VCEO
45
60
80
Vdc
Collector – Base Voltage
VCBO
45
60
80
Vdc
Emitter – Base Voltage
VEBO
5.0
COLLECTOR
2
Vdc
Collector Current —
Continuous
IC
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage
Junction Temperature
Range
TJ, Tstg
– 55 to +150
°C
Electrostatic Discharge
ESD
HBM>16000, MM>2000
V
Max
Unit
3
BASE
Adc
0.5
mW
mW/°C
625
5.0
1
EMITTER
Watt
mW/°C
1.5
12
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction to Ambient
RqJA
Thermal Resistance,
Junction to Case
RqJC
TO–92 (TO–226AA)
CASE 29
STYLE 14
°C/W
200
 Semiconductor Components Industries, LLC, 2000
February, 2000 – Rev. 2
3
°C/W
ORDERING INFORMATION
83.3
1
Device
Package
Shipping
BC635RL1
TO–92
2000 Units/Tape & Reel
BC635ZL1
TO–92
2000 Units/Ammo Pack
BC637
TO–92
5000 Units/Box
BC639
TO–92
5000 Units/Box
BC639RL1
TO–92
2000 Units/Tape & Reel
BC639ZL1
TO–92
2000 Units/Ammo Pack
Publication Order Number:
BC635/D
BC635, BC637, BC639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
45
60
80
—
—
—
—
—
—
45
60
80
—
—
—
—
—
—
5.0
—
—
Vdc
—
—
—
—
100
10
nAdc
µAdc
25
40
40
40
25
—
—
—
—
—
—
250
160
160
—
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CEO
BC635
BC637
BC639
Vdc
V(BR)CBO
BC635
BC637
BC639
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
Vdc
ICBO
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
hFE
BC635
BC637
BC639
(IC = 500 mA, VCE = 2.0 V)
—
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
—
—
1.0
Vdc
fT
—
200
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
50
—
pF
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
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2
BC635, BC637, BC639
500
1000
VCE = 2 V
SOA = 1S
200
PD TA 25°C
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
500
100
50
PD TC 25°C
20
10
5
1
BC635
BC637
BC639
PD TA 25°C
PD TC 25°C
2
1
2
3 4 5
7 10
20 30 40 50 70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
100
50
20
100
1
3
10
30 50 100
IC, COLLECTOR CURRENT (mA)
300 500
1000
Figure 2. DC Current Gain
500
1
300
V, VOLTAGE (VOLTS)
0.8
VCE = 2 V
100
50
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
20
1
10
100
IC, COLLECTOR CURRENT (mA)
0
1000
1
Figure 3. Current–Gain — Bandwidth Product
θV, TEMPERATURE COEFFICIENTS (mV/°C)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. Active Region Safe Operating Area
5
10
100
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
–0.2
–1.0
VCE = 2 VOLTS
∆T = 0°C to +100°C
–1.6
θV for VBE
–2.2
1
3
5
10
30 50
100
IC, COLLECTOR CURRENT (mA)
300 500
Figure 5. Temperature Coefficients
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3
1000
1000
BC635, BC637, BC639
PACKAGE DIMENSIONS
TO–92 (TO–226AA)
CASE 029–04
ISSUE AD
A
B
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
SECTION X–X
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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For additional information, please contact your local
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4
BC635/D