ETC BC846BPDW1T1/D

BC846BPDW1T1,
BC847BPDW1T1,
BC847CPDW1T1,
BC848BPDW1T1,
BC848CPDW1T1
http://onsemi.com
Dual General Purpose
Transistors
(3)
NPN/PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
• Device Marking:
BC846BPDW1T1 = BB
BC847BPDW1T1 = 13F
BC847CPDW1T1 = 13G
BC848BPDW1T1 = 13K
BC848CPDW1T1 = 13L
(2)
Q2
Q1
(4)
(5)
(6)
6 5
1
MAXIMUM RATINGS – NPN
Rating
(1)
2
4
3
Symbol
BC846
BC847
BC848
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
DEVICE MARKING
Symbol
BC846
BC847
BC848
Unit
See Table
Collector – Emitter Voltage
VCEO
–65
–45
–30
V
Collector – Base Voltage
VCBO
–80
–50
–30
V
Emitter – Base Voltage
VEBO
–5.0
–5.0
–5.0
V
IC
–100
–100
–100
mAdc
Collector Current —
Continuous
SOT–363/SC–88
CASE 419B
STYLE 1
MAXIMUM RATINGS – PNP
Rating
Collector Current —
Continuous
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board (1)
TA = 25°C
Derate Above 25°C
Device
Package
Shipping
Symbol
Max
Unit
BC846BPDW1T1
SOT–363
3000 Units/Reel
PD
380
250
mW
BC847BPDW1T1
SOT–363
3000 Units/Reel
BC847CPDW1T1
SOT–363
3000 Units/Reel
3.0
mW/°C
BC848BPDW1T1
SOT–363
3000 Units/Reel
BC848CPDW1T1
SOT–363
3000 Units/Reel
Thermal Resistance,
Junction to Ambient
RqJA
328
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
– 55 to +150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 0
1
Publication Order Number:
BC846BPDW1T1/D
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
65
45
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
80
50
30
—
—
—
—
—
—
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
15
5.0
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
290
520
475
800
Characteristic
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA)
Collector – Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mA)
Emitter – Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CES
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)EBO
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
—
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
—
—
—
—
0.25
0.6
V
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
—
—
0.7
0.9
—
—
V
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
—
660
—
700
770
mV
fT
100
—
—
MHz
Cobo
—
—
4.5
pF
—
—
—
—
10
4.0
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846B, BC847B, BC848B
BC847C, BC848C
http://onsemi.com
2
dB
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
–65
–45
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–15
–4.0
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
150
270
—
—
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
290
520
475
800
—
—
—
—
–0.3
–0.65
—
—
–0.7
–0.9
—
—
–0.6
—
—
—
–0.75
–0.82
fT
100
—
—
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
—
—
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
—
—
10
dB
Characteristic
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mA)
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CES
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)EBO
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ICBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
(IC = –2.0 mA, VCE = –5.0 V)
hFE
Collector – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
—
V
V
V
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
http://onsemi.com
3
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
TYPICAL NPN CHARACTERISTICS
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
1.0
20
2.0
5.0 10
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
Figure 1. Normalized DC Current Gain
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
50 70 100
Figure 2. “Saturation” and “On” Voltages
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.2
Figure 3. Collector Saturation Region
10
1.0
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base–Emitter Temperature Coefficient
http://onsemi.com
4
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
TYPICAL NPN CHARACTERISTICS
10
C, CAPACITANCE (pF)
7.0
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
VR, REVERSE VOLTAGE (VOLTS)
40
20
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 5. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
2.0
50
100
200
50
100
200
–1.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
1.0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
–1.4
–1.8
θVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
Figure 9. Collector Saturation Region
0.5
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
http://onsemi.com
5
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
TYPICAL PNP CHARACTERISTICS — BC846
TJ = 25°C
VCE = –5.0 V
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
–1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
VCE(sat) @ IC/IB = 10
–0.1 –0.2
0
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–5.0 –10 –20
–1.0 –2.0
IC, COLLECTOR CURRENT (mA)
Figure 12. “On” Voltage
–2.0
–1.0
–1.6
–1.2
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–0.8
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. DC Current Gain
–20
–1.4
–1.8
–2.6
–3.0
–0.2
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
–0.1 –0.2
–0.5
–5.0 –10 –20
–1.0 –2.0
VR, REVERSE VOLTAGE (VOLTS)
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 14. Base–Emitter Temperature Coefficient
40
6.0
–55°C to 125°C
–2.2
Figure 13. Collector Saturation Region
20
θVB for VBE
VCE = –5.0 V
500
200
100
50
20
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
–50 –100
Figure 15. Capacitance
Figure 16. Current–Gain – Bandwidth Product
http://onsemi.com
6
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
TYPICAL PNP CHARACTERISTICS — BC847/BC848
–1.0
1.5
TA = 25°C
–0.9
VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
–100 –200
Figure 17. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
–1.6
–1.2
IC =
–10 mA
IC = –50 mA
IC = –200 mA
IC = –100 mA
IC = –20 mA
–0.4
0
–0.02
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–10 –20
–0.1
–1.0
IB, BASE CURRENT (mA)
–0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 20. Base–Emitter Temperature
Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 19. Collector Saturation Region
C, CAPACITANCE (pF)
–100
–50
Figure 18. “Saturation” and “On” Voltages
–2.0
–0.8
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–20 –30 –40
400
300
200
150
VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 21. Capacitances
Figure 22. Current–Gain – Bandwidth Product
http://onsemi.com
7
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZθJA(t) = r(t) RθJA
RθJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
10
1.0
100
1.0 k
10 k
100 k
1.0 M
t, TIME (ms)
Figure 23. Thermal Response
–200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
–100
–50
–10
–5.0
–2.0
–1.0
TA = 25°C
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0
–10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 24. Active Region Safe Operating Area
http://onsemi.com
8
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.5 mm (min)
0.4 mm (min)
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
1.9 mm
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.65 mm 0.65 mm
SOT–363
SOT–363 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–363 package, PD can be calculated as
follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–363 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
http://onsemi.com
9
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
Notes
http://onsemi.com
10
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
PACKAGE DIMENSIONS
SOT–363/SC–88
CASE 419B–01
ISSUE G
A
G
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
5
4
–B–
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
V
3
D 6 PL
0.2 (0.008)
M
B
M
N
J
C
H
K
http://onsemi.com
11
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
–––
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
–––
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,
BC848CPDW1T1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong 800–4422–3781
Email: [email protected]
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 2:30pm to 5:00pm Munich Time)
Email: [email protected]
French Phone: (+1) 303–308–7141 (M–F 2:30pm to 5:00pm Toulouse Time)
Email: [email protected]
English Phone: (+1) 303–308–7142 (M–F 1:30pm to 5:00pm UK Time)
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549
Phone: 81–3–5487–8345
Email: [email protected]
Fax Response Line: 303–675–2167
800–344–3810 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
12
BC846BPDW1T1/D