ETC BC856AWT1/D

BC856AWT1, BWT1,
BC857AWT1, BWT1,
BC858AWT1, BWT1, CWT1
Preferred Devices
General Purpose
Transistors
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PNP Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
• Device Marking:
BC856AWT1 = 3A
BC856BWT1 = 3B
BC857AWT1 = 3E
BC857BWT1 = 3F
BC858AWT1 = 3J
BC858BWT1 = 3K
BC858CWT1 = 3L
1
BASE
2
EMITTER
3
1
2
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector – Emitter Voltage
VCEO
–65
–45
–30
V
Collector – Base Voltage
VCBO
–80
–50
–30
V
Emitter – Base Voltage
VEBO
–5.0
–5.0
–5.0
V
IC
–100
–100
–100
mAdc
Collector Current —
Continuous
SOT–323/SC–70
CASE 419
STYLE 3
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
See Table
Symbol
Max
Unit
PD
150
mW
Thermal Resistance,
Junction to Ambient
RqJA
833
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
FR– 5 Board (1)
TA = 25°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
ORDERING INFORMATION
Device
Package
Shipping
BC856AWT1
SOT–323
3000 Units/Reel
BC856BWT1
SOT–323
3000 Units/Reel
BC857AWT1
SOT–323
3000 Units/Reel
BC857BWT1
SOT–323
3000 Units/Reel
BC858AWT1
SOT–323
3000 Units/Reel
BC858BWT1
SOT–323
3000 Units/Reel
BC858CWT1
SOT–323
3000 Units/Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 1
1
Publication Order Number:
BC856AWT1/D
BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
–65
–45
–30
—
—
—
—
—
—
V
Collector – Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
–80
–50
–30
—
—
—
—
—
—
V
Collector – Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
–80
–50
–30
—
—
—
—
—
—
V
Emitter – Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
–5.0
–5.0
–5.0
—
—
—
—
—
—
V
ICBO
—
—
—
—
–15
–4.0
nA
µA
hFE
—
—
—
90
150
270
—
—
—
—
125
220
420
180
290
520
250
475
800
—
—
—
—
–0.3
–0.65
—
—
–0.7
–0.9
—
—
–0.6
—
—
—
–0.75
–0.82
fT
100
—
—
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
—
—
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
—
—
10
dB
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
(IC = –2.0 mA, VCE = –5.0 V)
BC856A, BC857A, BC585A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
Collector – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base – Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
V
V
V
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
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BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC857/BC858
1.5
–1.0
TA = 25°C
–0.9
VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
–0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
VCE(sat) @ IC/IB = 10
–0.1
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
0
–0.1 –0.2
–100 –200
Figure 1. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
–1.6
–1.2
IC =
–10 mA
IC = –50 mA
IC = –200 mA
IC = –100 mA
IC = –20 mA
–0.4
0
–0.02
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–10 –20
–0.1
–1.0
IB, BASE CURRENT (mA)
–0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 4. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
–100
–50
Figure 2. “Saturation” and “On” Voltages
–2.0
–0.8
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–20 –30 –40
400
300
200
150
VCE = –10 V
TA = 25°C
100
80
60
40
30
20
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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3
BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC856
TJ = 25°C
VCE = –5.0 V
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
–1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
VCE(sat) @ IC/IB = 10
0
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.1 –0.2
–0.5
–50 –100 –200
–5.0 –10 –20
–1.0 –2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–2.0
–1.0
–1.6
–1.2
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–0.8
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
–20
–1.4
–1.8
–2.6
–3.0
–0.2
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
–0.1 –0.2
–0.5
–5.0 –10 –20
–1.0 –2.0
VR, REVERSE VOLTAGE (VOLTS)
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 10. Base–Emitter Temperature Coefficient
40
6.0
–55°C to 125°C
–2.2
Figure 9. Collector Saturation Region
20
θVB for VBE
VCE = –5.0 V
500
200
100
50
20
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
–50 –100
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
ZθJC(t) = r(t) RθJC
RθJC = 83.3°C/W MAX
ZθJA(t) = r(t) RθJA
RθJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
P(pk)
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k 10 k
Figure 13. Thermal Response
–200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
–100
–50
–10
–5.0
–2.0
–1.0
TA = 25°C
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0
–10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SOT–323/SC–70
SOT–323/SC–70 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–323/SC–70 is a
function of the pad size. This can vary from the minimum
pad size for soldering to a pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by TJ(max), the maximum rated
junction temperature of the die, RθJA, the thermal
resistance from the device junction to ambient, and the
operating temperature, TA. Using the values provided on
the data sheet for the SOT–323/SC–70 package, PD can be
calculated as follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
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BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
PACKAGE DIMENSIONS
SOT–323/SC–70
CASE 419–02
ISSUE G
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
K
H
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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BC856AWT1, BWT1, BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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BC856AWT1/D