ETC BCX71JL/D

BCX71J
General Purpose Transistor
PNP Silicon
• Moisture Sensitivity Level: 1
MAXIMUM RATINGS
Rating
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Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
–45
Vdc
Collector-Base Voltage
VCBO
–45
Vdc
Emitter-Base Voltage
VEBO
–5.0
Vdc
IC
–100
mAdc
Symbol
Max
Unit
Total Device Dissipation (Note 1.)
TA = 25°C
Derate above 25°C
PD
350
mW
2.8
mW/°C
Storage Temperature
Tstg
150
°C
Thermal Resistance –
Junction-to-Ambient (Note 1.)
RθJA
357
°C/W
Collector Current – Continuous
COLLECTOR
3
1
BASE
THERMAL CHARACTERISTICS
Characteristic
2
EMITTER
3
1
2
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAM
BJ M
BJ = Specific Device Marking
M = Date Code
ORDERING INFORMATION
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 0
1
Device
Package
Shipping
BCX71JLT1
SOT–23
3000/Tape & Reel
Publication Order Number:
BCX71J/D
BCX71J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
–45
–
–5.0
–
–
–
–20
–20
40
250
100
250
–
460
–
500
–
–
–0.25
–0.55
–0.6
–0.68
–0.85
–1.05
–0.6
–0.75
–
6.0
–
6.0
–
150
–
800
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IE = 1.0 µAdc, IE = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Vdc
Vdc
ICES
nAdc
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hFE
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.25 mAdc)
(IC = 50 mAdc, IB = 1.25 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
–
Vdc
Vdc
Vdc
Cobo
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
pF
NF
dB
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
ton
Turn–Off Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )
toff
ns
ns
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 µA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 µA
3.0
100 µA
300 µA
1.0 mA
2.0
IC = 1.0 mA
3.0
2.0
300 µA
1.0
0.7
0.5
100 µA
0.3
30 µA
0.2
1.0
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
0.1
10k
BANDWIDTH = 1.0 Hz
RS ≈ ∞
10 µA
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
5.0k 10k
BCX71J
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200k
100k
50k
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
1.0M
500k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = –5.0 Vdc, TA = 25°C)
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
200
100
2.0 dB
3.0 dB
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
20k
10k
NF 20 log10
0.5 dB
5.0k
2.0k
1.0k
500
200
100
30
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
2 2 12
S In RS en2 4KTR
4KTRS
500 700 1.0k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
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BCX71J
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
-55°C
100
80
MPS390
VCE
6 = 1.0 V
VCE = 10 V
60
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50 70 100
1.0
100
TA = 25°C
MPS3906
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
200 µA
150 µA
40
100 µA
20
50 µA
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1
0.2
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
40
Figure 8. Collector Characteristics
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 7. Collector Saturation Region
1.4
250 µA
60
0
20
IB = 400 µA
350 µA
50
100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
0
*VC for VCE(sat)
25°C to 125°C
-55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
Figure 9. “On” Voltages
VB for VBE
0.2
-55°C to 25°C
0.5
1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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50
100
BCX71J
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
3.0
tf
30
td @ VBE(off) = 0.5 V
2.0
100
70
50
20
50 70
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
10
-1.0
100
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 12. Turn–Off Time
500
10
TJ = 25°C
C, CAPACITANCE (pF)
VCE = 20 V
300
5.0 V
200
TJ = 25°C
7.0
100
Cib
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current–Gain — Bandwidth Product
Figure 14. Capacitance
20
10
MPS3906
hfe ≈ 200
@ IC = -1.0 mA
7.0
5.0
3.0
2.0
VCE = -10 Vdc
f = 1.0 kHz
TA = 25°C
MPS3905
hfe ≈ 100
@ IC = -1.0 mA
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
200
hoe, OUTPUT ADMITTANCE ( mhos)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 11. Turn–On Time
hie , INPUT IMPEDANCE (k Ω )
VCC = -3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
30
20
MPS3906
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
50
MPS3905
hfe ≈ 100
@ IC = 1.0 mA
3.0
Figure 15. Input Impedance
0.2
0.5
20
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
2.0
0.1
100
10
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
BCX71J
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN-569)
ZθJA(t) = r(t) • RθJA
TJ(pk) - TA = P(pk) ZθJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 17. Thermal Response
IC, COLLECTOR CURRENT (mA)
400
200
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
100 µs
100
TC = 25°C
60
TA = 25°C
40
dc
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
1.0 s
dc
20
4.0
10 µs
1.0 ms
40
4.0
6.0 8.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
Figure 18. Active–Region Safe Operating Area
IC, COLLECTOR CURRENT (nA)
104
103
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
VCC = 30 V
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
Example:
The MPS3905 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10-1
10-2
-40
-20
0
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
+20 +40 +60 +80 +100 +120 +140 +160
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN–569.
Figure 19. Typical Collector Leakage Current
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BCX71J
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT-23 POWER DISSIPATION
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT-23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD =
PD =
150°C – 25°C
= 225 milliwatts
556°C/W
The 556°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 225 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad. Using a board material such
as Thermal Clad, the power dissipation can be doubled
using the same footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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BCX71J
SOLDER STENCIL GUIDELINES
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 20 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
STEP 1
PREHEAT
ZONE 1
RAMP"
200°C
150°C
STEP 2
STEP 3
VENT
HEATING
SOAK" ZONES 2 & 5
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 5
STEP 4
HEATING
HEATING
ZONES 3 & 6 ZONES 4 & 7
SPIKE"
SOAK"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
160°C
150°C
140°C
100°C
100°C
50°C
STEP 6 STEP 7
VENT COOLING
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TMAX
TIME (3 TO 7 MINUTES TOTAL)
Figure 20. Typical Solder Heating Profile
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BCX71J
PACKAGE DIMENSIONS
SOT–23
TO–236AB
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
BCX71J
Notes
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BCX71J
Notes
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BCX71J
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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