ETC BD437/D

ON Semiconductor
BD437
BD439
BD441
Plastic Medium Power Silicon
NPN Transistor
. . . for amplifier and switching applications. Complementary types
are BD438 and BD442.
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4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
BD437
BD439
BD441
VCEO
45
60
80
Vdc
Collector–Base Voltage
BD437
BD439
BD441
VCBO
45
60
80
Vdc
VEBO
5.0
Vdc
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
36
288
Watts
W/C
TJ, Tstg
–55 to +150
C
Symbol
Max
Unit
θJC
3.5
C/W
Emitter–Base Voltage
Collector Current
Operating and Storage Junction
Temperature Range
CASE 77–09
TO–225AA TYPE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 10
1
Publication Order Number:
BD437/D
BD437 BD439 BD441
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µA, IB = 0)
Symbol
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
Collector Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
Max
45
60
80
–
–
–
–
–
–
45
60
80
–
–
–
–
5.0
–
–
–
–
–
–
–
–
0.1
0.1
0.1
–
–
1.0
30
20
15
–
–
–
–
–
–
85
40
–
–
375
475
40
25
15
–
–
–
–
–
–
–
–
0.8
VBE(on)
–
–
1.1
Vdc
fT
3.0
–
–
MHz
V(BR)CEO
V(BR)EBO
Vdc
ICBO
BD437
BD439
BD441
IEBO
Unit
Vdc
V(BR)CBO
BD437
BD439
BD441
Emitter Cutoff Current
(VEB = 5.0 V)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
Typ
BD437
BD439
BD441
Emitter–Base Breakdown Voltage
(IE = 100 µA, IC = 0)
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
Min
Vdc
mAdc
mAdc
hFE
BD437
BD439
BD441
hFE
BD437
BD439, BD441
hFE
BD437
BD439
BD441
VCE(sat)
BD437, BD439, BD441
Base–Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
Current–Gain – Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
http://onsemi.com
2
Vdc
BD437 BD439 BD441
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
1.6
IC = 10 A
100 mA
1.0 A
3.0 A
1.2
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)
30
20
50
70
100
200
3
5
300
500
Figure 1. Collector Saturation Region
hFE, CURRENT GAIN (NORMALIZED)
200
180
160
140
120
BD433, 435, 437
BD439, 441
100
80
60
40
20
0
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (AMP)
1
2
Figure 2. Current Gain
10
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
2.0
VOLTAGE (VOLTS)
1.6
5 ms
4.0
1.2
TJ = 150°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VCE(sat) @ IC/IB = 10
0
1.0
0.005 0.01 0.02 0.03 0.05
0.1 0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMP)
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
0.5
VBE @ VCE = 2.0 V
0.1
2.0 3.0 4.0
dc
CURVES APPLY BELOW RATED VCEO
BD437
BD439
BD441
1.0
Figure 3. “On” Voltage
5.0
50
2.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Active Region Safe Operating Area
http://onsemi.com
3
100
BD437 BD439 BD441
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
M
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4
BD437/D