ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • *ON Semiconductor Preferred Device VCEO(sus) = 80 Vdc (min.) — BDW46 100 Vdc (min.) — BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc 3.0 Vdc (max.) @ IC = 10.0 Adc Monolithic Construction with Built–In Base Emitter Shunt resistors TO–220AB Compact Package DARLINGTON 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80–100 VOLTS 85 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol BDW46 BDW42 BDW47 Unit VCEO 80 100 Vdc Collector–Base Voltage VCB 80 100 Vdc Emitter–Base Voltage VEB Rating Collector–Emitter Voltage 5.0 Vdc Collector Current — Continuous IC 15 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 85 0.68 Watts W/C –55 to +150 C Operating and Storage Junction Temperature Range TJ, Tstg CASE 221A–09 TO–220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.47 C/W PD, POWER DISSIPATION (WATTS) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: BDW42/D BDW42 BDW46 BDW47 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 100 — — — — 2.0 2.0 — — 1.0 1.0 — 2.0 1000 250 — — — — 2.0 3.0 — 3.0 Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) BDW46 BDW42/BDW47 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDW46 BDW42/BDW47 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDW41/BDW46 BDW42/BDW47 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) Base–Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) Vdc Vdc SECOND BREAKDOWN (2) Second Breakdown Collector Current with Base Forward Biased BDW42 IS/b VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc BDW46/BDW47 Adc 3.0 1.2 3.8 1.2 — — — — 4.0 — — — 200 300 300 — DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT Cob BDW42 BDW46/BDW47 Small–Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. (2) Pulse Test non repetitive: Pulse Width = 250 ms. http://onsemi.com 2 MHz pF BDW42 BDW46 BDW47 3.0 SCOPE APPROX + 8.0 V 0 51 V1 APPROX D1 8.0 k 150 - 12 V tr, tf 10 ns DUTY CYCLE = 1.0% for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities tf 1.0 0.7 0.5 0.3 0.2 + 4.0 V 25 µs ts 2.0 RC t, TIME (s) µ RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 5.0 VCC - 30 V 0.1 0.07 0.05 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times Figure 2. Switching Times Test Circuit http://onsemi.com 3 5.0 7.0 10 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDW42 BDW46 BDW47 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RθJC(t) = r(t) RθJC RθJC = 1.92°C/W 0.02 t1 0.03 0.01 0.02 0.01 0.01 0.02 0.03 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response ACTIVE–REGION SAFE OPERATING AREA 50 0.1 ms 20 10 TJ = 25°C 1.0 ms 5.0 2.0 1.0 0.5 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 0.5 ms dc 0.2 0.1 0.05 1.0 BDW42 10 TJ = 25°C 1.0 ms 5.0 2.0 1.0 0.5 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25°C (SINGLE PULSE) 0.5 ms dc 0.2 BDW46 BDW47 0.1 0.05 1.0 2.0 3.0 5.0 7.0 10 50 70 100 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 ms 20 Figure 5. BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 and 6 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. *Linear extrapolation http://onsemi.com 4 BDW42 BDW46 BDW47 300 TJ = + 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 100 TJ = 25°C VCE = 3.0 V IC = 3.0 A 50 30 20 BDW46, 47 (PNP) BDW42 (NPN) 10 1.0 2.0 5.0 Cob 100 Cib 70 50 10 20 50 100 f, FREQUENCY (kHz) 200 BDW46, 47 (PNP) BDW42 (NPN) 30 0.1 500 1000 1.0 2.0 5.0 10 20 0.5 VR, REVERSE VOLTAGE (VOLTS) 0.2 Figure 7. Small–Signal Current Gain Figure 8. Capacitance BDW40, 41, 42 (NPN) BDW45, 46, 47 (PNP) 20,000 TJ = 150°C 3000 2000 25°C 1000 500 300 200 0.1 -55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 20,000 VCE = 3.0 V 10,000 5000 100 50 7000 5000 TJ = 150°C 3000 25°C 2000 1000 700 500 -55°C 300 200 0.1 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. DC Current Gain TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 Figure 10. Collector Saturation Region http://onsemi.com 5 4.0 A 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 BDW42 BDW46 BDW47 BDW40, 41, 42 (NPN) BDW45, 46, 47 (PNP) 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 0.5 0.2 0.3 0.5 0.7 2.0 VBE @ VCE = 4.0 V 1.5 VBE(sat) @ IC/IB = 250 1.0 VCE(sat) @ IC/IB = 250 0.1 2.5 1.0 2.0 3.0 0.5 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) +5.0 +4.0 *IC/IB 250 +3.0 25°C to 150°C +2.0 +1.0 -55°C to 25°C 0 -1.0 *θVC for VCE(sat) -2.0 -3.0 25°C to 150°C θVB for VBE -4.0 -5.0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENT (mV/ °C) Figure 11. “On” Voltages 0.1 -55°C to 25°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 +5.0 +4.0 *IC/IB 250 +3.0 +25°C to 150°C +2.0 +1.0 0 -1.0 *θVC for VCE(sat) -2.0 -55°C to +25°C θVB for VBE +25°C to 150°C -3.0 -55°C to +25°C -4.0 -5.0 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 104 103 105 FORWARD REVERSE IC, COLLECTOR CURRENT (A) µ IC, COLLECTOR CURRENT (A) µ 105 VCE = 30 V 102 101 TJ = 150°C 100 10-1 +0.6 +0.4 100°C 25°C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 REVERSE 104 VCE = 30 V 103 102 TJ = 150°C 101 100 100°C 25°C 10-1 -0.6 -0.4 -0.2 -1.2 -1.4 FORWARD VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut–Off Region http://onsemi.com 6 BDW42 BDW46 BDW47 NPN BDW42 COLLECTOR PNP BDW46 BDW47 BASE COLLECTOR BASE 8.0 k 60 8.0 k EMITTER 60 EMITTER Figure 14. Darlington Schematic http://onsemi.com 7 BDW42 BDW46 BDW47 PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE AB –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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