ETC BDW42/D

ON Semiconductor
NPN
BDW42 *
Darlington Complementary
Silicon Power Transistors
PNP
BDW46
. . . designed for general purpose and low speed switching
applications.
BDW47 *
• High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
•
•
•
*ON Semiconductor Preferred Device
VCEO(sus) = 80 Vdc (min.) — BDW46
100 Vdc (min.) — BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built–In Base Emitter Shunt resistors
TO–220AB Compact Package
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80–100 VOLTS
85 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
Symbol
BDW46
BDW42
BDW47
Unit
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEB
Rating
Collector–Emitter Voltage
5.0
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TC = 25C
Derate above 25C
PD
85
0.68
Watts
W/C
–55 to +150
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
1.47
C/W
PD, POWER DISSIPATION (WATTS)
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
BDW42/D
BDW42 BDW46 BDW47
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
—
—
—
—
2.0
2.0
—
—
1.0
1.0
—
2.0
1000
250
—
—
—
—
2.0
3.0
—
3.0
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
BDW46
BDW42/BDW47
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
BDW46
BDW42/BDW47
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDW41/BDW46
BDW42/BDW47
Vdc
ICEO
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
Vdc
SECOND BREAKDOWN (2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
IS/b
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
BDW46/BDW47
Adc
3.0
1.2
3.8
1.2
—
—
—
—
4.0
—
—
—
200
300
300
—
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
fT
Cob
BDW42
BDW46/BDW47
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Pulse Test non repetitive: Pulse Width = 250 ms.
http://onsemi.com
2
MHz
pF
BDW42 BDW46 BDW47
3.0
SCOPE
APPROX
+ 8.0 V
0
51
V1
APPROX
D1
8.0 k
150
- 12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
for td and tr, D1 id disconnected
and V2 = 0
For NPN test circuit reverse all polarities
tf
1.0
0.7
0.5
0.3
0.2
+ 4.0 V
25 µs
ts
2.0
RC
t, TIME (s)
µ
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
TUT
RB
V2
5.0
VCC
- 30 V
0.1
0.07
0.05
0.1
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td @ VBE(off) = 0 V
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
Figure 2. Switching Times Test Circuit
http://onsemi.com
3
5.0 7.0 10
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
BDW42 BDW46 BDW47
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RθJC(t) = r(t) RθJC
RθJC = 1.92°C/W
0.02
t1
0.03
0.01
0.02
0.01
0.01
0.02 0.03
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
50
100
200 300
500
1000
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
50
0.1 ms
20
10
TJ = 25°C
1.0 ms
5.0
2.0
1.0
0.5
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
50
0.5 ms
dc
0.2
0.1
0.05
1.0
BDW42
10
TJ = 25°C
1.0 ms
5.0
2.0
1.0
0.5
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
0.5 ms
dc
0.2
BDW46
BDW47
0.1
0.05
1.0
2.0 3.0
5.0 7.0 10
50 70 100
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 ms
20
Figure 5. BDW42
20 30
2.0 3.0
5.0 7.0 10
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200C; TC is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk) 200C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
http://onsemi.com
4
BDW42 BDW46 BDW47
300
TJ = + 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
100
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
50
30
20
BDW46, 47 (PNP)
BDW42 (NPN)
10
1.0
2.0
5.0
Cob
100
Cib
70
50
10
20
50 100
f, FREQUENCY (kHz)
200
BDW46, 47 (PNP)
BDW42 (NPN)
30
0.1
500 1000
1.0 2.0
5.0 10
20
0.5
VR, REVERSE VOLTAGE (VOLTS)
0.2
Figure 7. Small–Signal Current Gain
Figure 8. Capacitance
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
20,000
TJ = 150°C
3000
2000
25°C
1000
500
300
200
0.1
-55°C
0.2
0.3
0.5 0.7
1.0
2.0
3.0
VCE = 3.0 V
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
20,000
VCE = 3.0 V
10,000
5000
100
50
7000
5000
TJ = 150°C
3000
25°C
2000
1000
700
500
-55°C
300
200
0.1
5.0 7.0 10
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7
1.0
Figure 10. Collector Saturation Region
http://onsemi.com
5
4.0 A
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
BDW42 BDW46 BDW47
BDW40, 41, 42 (NPN)
BDW45, 46, 47 (PNP)
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
0.5
0.2 0.3
0.5 0.7
2.0
VBE @ VCE = 4.0 V
1.5
VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.1
2.5
1.0
2.0 3.0
0.5
5.0 7.0 10
VCE(sat) @ IC/IB = 250
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
+5.0
+4.0
*IC/IB 250
+3.0
25°C to 150°C
+2.0
+1.0
-55°C to 25°C
0
-1.0
*θVC for VCE(sat)
-2.0
-3.0
25°C to 150°C
θVB for VBE
-4.0
-5.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
Figure 11. “On” Voltages
0.1
-55°C to 25°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
7.0 10
+5.0
+4.0
*IC/IB 250
+3.0
+25°C to 150°C
+2.0
+1.0
0
-1.0
*θVC for VCE(sat)
-2.0
-55°C to +25°C
θVB for VBE
+25°C to 150°C
-3.0
-55°C to +25°C
-4.0
-5.0
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
104
103
105
FORWARD
REVERSE
IC, COLLECTOR CURRENT (A)
µ
IC, COLLECTOR CURRENT (A)
µ
105
VCE = 30 V
102
101
TJ = 150°C
100
10-1
+0.6 +0.4
100°C
25°C
+0.2
0
-0.2 -0.4
-0.6 -0.8
-1.0
REVERSE
104
VCE = 30 V
103
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 -0.4 -0.2
-1.2 -1.4
FORWARD
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
+0.2 +0.4 +0.6
+0.8
+1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut–Off Region
http://onsemi.com
6
BDW42 BDW46 BDW47
NPN
BDW42
COLLECTOR
PNP
BDW46
BDW47
BASE
COLLECTOR
BASE
8.0 k
60
8.0 k
EMITTER
60
EMITTER
Figure 14. Darlington Schematic
http://onsemi.com
7
BDW42 BDW46 BDW47
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AB
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: [email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: [email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: [email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
BDW42/D