DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG67W V2 • Gold metallization ensures excellent reliability. BFG67W/X V6 BFG67W/XR V7 APPLICATIONS CODE handbook, 2 columns 4 PINNING They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. 3 1 PIN 2 DESCRIPTION Top view BFG67W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter MSB014 Fig.1 SOT343. handbook, 2 columns 3 BFG67W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter BFG67W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 2 4 1 Top view MSB035 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 10 V IC collector current (DC) − − 50 mA Ptot total power dissipation up to Ts = 60 °C − − 500 mW hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C − 7.5 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 15.5 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz − 2.2 − dB September 1994 2 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C up to Ts = 60 °C; see Fig.3; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point up to Ts = 60 °C; note 1 Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MLB779 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 o 200 T s ( C) Fig.3 Power derating curve. September 1994 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0 − − 20 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA; IB = 0 − − 10 V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0 − − 2.5 V ICBO collector cut-off current open emitter; VCB = 5 V; IE = 0 − − 50 nA hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − fT transition frequency IC = 15 mA; VCE = 8 V; f = 500 MHz; − Tamb = 25 °C 7.5 − GHz Cc collector capacitance IE = ie = 0; VCE = 8 V; f = 1 MHz − 0.7 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 15.5 − dB IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 10 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz − 2.2 − dB F noise figure Note s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -----------------------------------------------------------dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) September 1994 4 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MBB301 MLB984 1 120 handbook, halfpage handbook, halfpage C re (pF) h FE 0.8 80 0.6 0.4 40 0.2 0 0 0 20 40 I C (mA) 0 60 VCE = 5 V. Fig.4 8 12 16 V CB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.5 MLB985 10 handbook, halfpage fT (GHz) 8 6 4 2 0 0 10 20 30 40 I C (mA) f = 2 GHz; VCE = 8 V; Tamb = 25 °C. Fig.6 4 Transition frequency as a function of collector current; typical values. September 1994 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MLB986 30 MLB987 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 20 MSG 30 G max MSG G UM 20 10 G max 10 0 0 10 20 0 30 f = 1 GHz; VCE = 8 V. Fig.7 102 10 I C (mA) 103 f (MHz) 104 IC = 5 mA; VCE = 8 V. Gain as a function of collector current; typical values. Fig.8 MLB988 50 Gain as a function of frequency; typical values. MLB989 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 G UM 40 MSG MSG 30 30 20 20 G max 10 10 2 10 3 f (MHz) 10 0 4 10 IC = 15 mA; VCE = 8 V. Fig.9 September 1994 G max 10 0 10 G UM 10 2 10 3 f (MHz) 10 IC = 30 mA; VCE = 8 V. Gain as a function of frequency; typical values. Fig.10 Gain as a function of frequency; typical values. 6 4 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MBB308 4 handbook, halfpage f = 2 GHz F (dB) MBB309 4 handbook, halfpage F (dB) I C = 30 mA 3 3 1 GHz 15 mA 900 MHz 5 mA 500 MHz 2 2 1 1 0 10 2 0 1 10 I C (mA) 100 VCE = 8 V. f (MHz) 10 4 VCE = 8 V. Fig.11 Minimum noise figure as a function of collector current; typical values. September 1994 10 3 Fig.12 Minimum noise figure as a function of frequency; typical values. 7 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor stability circle 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 Γ opt unstable region 180 o F min = 0.95 dB 0.2 0 0.5 1 0.2 2 5 0o F = 1.5 dB 0.2 0 5 F = 2 dB F = 3 dB 0.5 2 135 o 45 o 1 MLB990 1.0 90 o f = 500 MHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. Fig.13 Common emitter noise figure circles; typical values. stability circle 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 F min = 1.30 dB 0.2 180 o Γ opt 0.2 0 0.5 unstable region 1 0.4 5 0.2 2 5 0o 0 F = 2 dB 5 0.2 F = 3 dB F = 4 dB 0.5 2 135 o 45 o 1 MLB991 f = 1 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. 90 o Fig.14 Common emitter noise figure circles; typical values. September 1994 8 1.0 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o 1.0 handbook, full pagewidth 1 135 o 0.5 F = 4 dB 45 o 2 F = 5 dB 0.6 F = 3 dB F min = 2.20 dB 0.2 0.8 0.4 5 Γ opt 180 o 0.2 0 0.5 0.2 1 2 5 0o G max = 10.4 dB 0 G = 10 dB 0.2 5 G = 9 dB 0.5 2 135 o 45 o 1 MLB992 90 o f = 2 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω. Fig.15 Common emitter noise figure circles; typical values. September 1994 9 1.0 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 3 GHz 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLB993 1.0 90 o VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.16 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MLB994 VCE = 8 V; IC = 15 mA. Fig.17 Common emitter forward transmission coefficient (s21); typical values. September 1994 10 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLB995 VCE = 8 V; IC = 15 mA. Fig.18 Common emitter reverse transmission coefficient (s12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLB996 1.0 90 o VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.19 Common emitter output reflection coefficient (s22); typical values. September 1994 11 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor SPICE parameters for the BFG67W crystal SEQUENCE No. PARAMETER VALUE PARAMETER VALUE 1 IS 556.4 aA 36(1) VJS 750.0 mV 2 BF 170.0 − 37(1) MJS 0.000 − 3 NF 0.995 − 38 FC 0.870 − 4 VAF 48.03 V Note 5 IKF 918.1 mA 6 ISE 10.47 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 1.479 − 8 BR 142.1 − 9 NR 0.994 − 10 VAR 2.555 V 11 IKR 9.632 A 12 ISC 438.2 aA 13 NC 1.089 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 655.9 mΩ 18 RC 2.000 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 1.137 pF 23 VJE 600.0 mV 24 MJE 0.249 − 25 TF 11.97 ps 26 XTF 25.99 − 27 VTF 1.223 V 28 ITF 197.3 mA Cbe 70 fF 29 PTF 10.03 deg Ccb 50 fF 30 CJC 515.9 fF Cce 115 fF 31 VJC 155.8 mV L1 0.34 nH 32 MJC 56.02 − L2 0.10 nH 33 XCJC 130.0 − L3 0.25 nH 34 TR 1.877 ns LB 0.40 nH 35(1) CJS 0.000 F LE 0.40 nH September 1994 UNIT SEQUENCE No. C cb handbook, halfpage L1 UNIT LB B L2 B' C be C' E' C Cce LE MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc); fc = scaling frequency = 1 GHz. Fig.20 Package equivalent circuit SOT343; SOT343R. List of components (see Fig.20) DESIGNATION 12 VALUE UNIT Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor PACKAGE OUTLINES 1.00 max 0.2 M A 0.2 M 0.1 max 0.4 0.2 B 0.2 4 3 A 1.35 1.15 2.2 2.0 1 0.3 0.1 2 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B MSB374 Dimensions in mm. Fig.21 SOT343. 1.00 max 0.2 M A 0.2 M 0.1 max 0.4 0.2 B 0.2 3 4 A 1.35 1.15 2.2 2.0 2 0.3 0.1 1 0.25 0.10 0.7 0.5 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.22 SOT343R. September 1994 13 MSB367 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1994 14 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor NOTES September 1994 15 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SÃO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (9)0-50261, Fax. (9)0-520971 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 63 23, 20043 HAMBURG, Tel. (040)3296-0, Fax. (040)3296 213. Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 Hong Kong: PHILIPS HONG KONG Ltd., 6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T., Tel. (852)424 5121, Fax. (852)428 6729 India: Philips INDIA Ltd, Shivsagar Estate, A Block , Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)640 000, Fax. (01)640 200 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5028, Fax. (03)3740 0580 Korea: (Republic of) Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB Tel. (040)783749, Fax. (040)788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Philips Semiconductors Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546. Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)14163160/4163333, Fax. (01)14163174/4163366. Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494. Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382. Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319. Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. (0 212)279 2770, Fax. (0212)269 3094 United Kingdom: Philips Semiconductors LTD., 276 Bath road, Hayes, MIDDLESEX UB3 5BX, Tel. (081)73050000, Fax. (081)7548421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD34 © Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123065/1500/01/pp16 Document order number: Date of release: September 1994 9397 739 20011