ETC BFT93/T1

DISCRETE SEMICONDUCTORS
DATA SHEET
BFT93W
PNP 4 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
February 1995
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
FEATURES
DESCRIPTION
• High power gain
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
handbook, 2 columns
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
PINNING
APPLICATIONS
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
3
1
PIN
DESCRIPTION
1
base
2
emitter
3
collector
2
Top view
MBC870
BFT93W Marking code: X1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
−15
V
VCEO
collector-emitter voltage
open base
−
−
−12
V
IC
collector current (DC)
−
−
−50
mA
Ptot
total power dissipation
up to Ts = 93 °C; note 1
−
−
300
mW
hFE
DC current gain
IC = −30 mA; VCE = −5 V
20
50
−
Cre
feedback capacitance
IC = 0; VCE = −5 V; f = 1 MHz
−
1
−
pF
fT
transition frequency
IC = −30 mA; VCE = −5 V;
f = 500 MHz
−
4
−
GHz
GUM
maximum unilateral power gain IC = −30 mA; VCE = −5 V;
f = 500 MHz; Tamb = 25 °C
−
15.5
−
dB
F
noise figure
−
2.4
−
dB
Tj
junction temperature
−
−
150
°C
IC = −10 mA; VCE = −5 V;
f = 500 MHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
February 1995
2
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−15
V
VCEO
collector-emitter voltage
open base
−
−12
V
VEBO
emitter-base voltage
open collector
−
−2
V
IC
collector current (DC)
−
−50
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
up to Ts = 93 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
up to Ts = 93 °C; note 1
VALUE
UNIT
190
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −5 V
−
−
−50
hFE
DC current gain
IC = −30 mA; VCE = −5 V
20
50
−
fT
transition frequency
IC = −30 mA; VCE = −5 V;
f = 500 MHz; Tamb = 25 °C
−
4
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = −5 V;
f = 1 MHz
−
1.2
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −0.5 V;
f = 1 MHz
−
1.4
−
pF
Cre
feedback capacitance
IC = 0; VCE = −5 V;
f = 1 MHz
−
1
−
pF
GUM
maximum unilateral power
gain; note 1
IC = −30 mA; VCE = −5 V;
f = 500 MHz; Tamb = 25 °C
−
15.5
−
dB
IC = −30 mA; VCE = −5 V;
f = 1 GHz; Tamb = 25 °C
−
10
−
dB
Γs = Γopt; IC = −10 mA;
VCE = −5 V; f = 500 MHz
−
2.4
−
dB
Γs = Γopt; IC = −10 mA;
VCE = −5 V; f = 1 GHz
−
3
−
dB
F
noise figure
Note
nA
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------dB.
( 1 – s 11 2 ) ( 1 – s 22 2 )
February 1995
3
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB424
400
MLB425
60
P tot
(mW)
h FE
300
40
200
20
100
0
0
0
50
100
150
Ts
200
( o C)
0
10
20
30
40
I C (mA)
VCE = −5 V; Tj = 25 °C.
Fig.2
Power derating as a function of the soldering
point temperature.
Fig.3
MLB426
2
DC current gain as a function of collector
current, typical values.
MLB427
6
C re
(pF)
1.6
V CE =
10 V
fT
(GHz)
5V
4
1.2
0.8
2
0.4
0
0
0
4
8
12
16
20
VCB (V)
1
Feedback capacitance as a function of
collector-base voltage, typical values.
February 1995
I C (mA)
10 2
f = 500 MHz; Tamb = 25 °C.
IC = 0; f = 1 MHz.
Fig.4
10
Fig.5
4
Transition frequency as a function of
collector current, typical values.
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB428
30
gain
gain
(dB)
(dB)
20
MLB429
30
20
MSG
G UM
MSG
10
G UM
10
0
0
10
20
0
40
30
0
10
30
20
I C (mA)
VCE = −5 V; f = 1 GHz.
VCE = −5 V; f = 500 MHz.
Fig.6
40
I C (mA)
Gain as a function of collector current,
typical values.
Fig.7
MLB430
50
Gain as a function of collector current,
typical values.
MLB431
50
gain
gain
(dB)
(dB)
40
40
G UM
30
G UM
MSG
MSG
30
20
20
10
10
G max
G max
0
0
10
10
2
10
3
f (MHz)
10
4
10
VCE = −5 V; IC = −10 mA.
Fig.8
February 1995
10
2
10
3
f (MHz)
10
VCE = −5 V; IC = −30 mA.
Gain as a function of frequency,
typical values.
Fig.9
5
Gain as a function of frequency,
typical values.
4
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
40 MHz
0.2
0.5
0
5
2
135 o
0o
45 o
1
MLB434
1.0
90 o
VCE = −10 V; IC = −30 mA.
Fig.10 Common emitter input reflection coefficient (s11), typical values.
90 o
135 o
45 o
40 MHz
180 o
50
40
30
20
10
0o
3 GHz
135 o
45 o
90 o
MLB435
VCE = −10 V; IC = −30 mA.
Fig.11 Common emitter forward transmission coefficient (s21), typical values.
February 1995
6
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
0o
40 MHz
135 o
45 o
90 o
MLB436
VCE = −10 V; IC = −30 mA.
Fig.12 Common emitter reverse transmission coefficient (s12), typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
3 GHz
0o
0
40 MHz
5
0.2
0.5
2
135 o
45 o
1
MLB437
1.0
90 o
VCE = −10 V; IC = −30 mA.
Fig.13 Common emitter output reflection coefficient (s22), typical values.
February 1995
7
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
MLB432
6
MLB433
6
F
(dB)
F
(dB)
IC =
30 mA
1 GHz
4
4
20 mA
500 MHz
10 mA
5 mA
2
2
0
1
10
I C (mA)
0
10 2
10 2
f (MHz)
10 4
VCE = −5 V.
VCE = −5 V.
Fig.14 Minimum noise figure as a function of
collector current, typical values.
February 1995
10 3
Fig.15 Minimum noise figure as a function of
frequency, typical values.
8
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
F min = 2.40 dB
0.2
180 o
0.2
0
0.5
0.2
1
2
5
0o
F = 3 dB
F = 4 dB
0.2
0.4
5
Γ opt
0
5
F = 5 dB
0.5
2
135 o
45 o
1
MLB438
1.0
90 o
VCE = −5 V; IC = −10 mA; f = 500 MHz; Zo = 50 Ω.
Fig.16 Common emitter noise figure circles, typical values.
90 o
1.0
1
135 o
45 o
2
0.5
0.8
0.6
F min = 2.90 dB
0.2
0.4
5
0.2
Γ opt
180 o
0.2
0
0.5
1
2
5
0o
0
F = 3.5 dB
F = 4 dB
0.2
5
F = 5 dB
0.5
2
135 o
45 o
1
MLB439
90 o
VCE = −5 V; IC = −10 mA; f = 1 GHz; Zo = 50 Ω.
Fig.17 Common emitter noise figure circles, typical values.
February 1995
9
1.0
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
SPICE parameters for the BFT93W crystal
SEQUENCE No. PARAMETER
VALUE
UNIT
SEQUENCE No. PARAMETER
VALUE
UNIT
1
IS
835.1
aA
36(1)
VJS
750.0
mV
2
BF
48.56
−
37(1)
MJS
0.000
−
3
NF
1.000
−
38
FC
811.6
m
4
VAF
19.01
V
Note
5
IKF
146.8
mA
6
ISE
90.94
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.749
−
8
BR
12.18
−
9
NR
997.6
m
10
VAR
3.374
V
11
IKR
6.742
mA
12
ISC
23.42
fA
13
NC
1.449
−
14
RB
10.00
Ω
15
IRB
1.000
µA
16
RBM
10.00
Ω
17
RE
200.0
mΩ
18
RC
3.800
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
EV
21(1)
XTI
3.000
−
22
CJE
1.570
pF
23
VJE
600.0
mV
24
MJE
382.2
m
25
TF
14.85
ps
26
XTF
2.209
−
27
VTF
2.989
V
28
ITF
14.37
mA
Cbe
2
fF
100
fF
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/Fc);
Fc = scaling frequency = 1 GHz.
Fig.18 Package equivalent circuit SOT323.
List of components (see Fig.18).
DESIGNATION
VALUE
UNIT
29
PTF
0.000
deg
Ccb
30
CJC
1.995
pF
Cce
100
fF
31
VJC
584.4
mV
L1
0.34
nH
32
MJC
281.3
m
L2
0.10
nH
33
XCJC
120.0
m
L3
0.34
nH
34
TR
3.000
ns
LB
0.60
nH
35(1)
CJS
0.000
F
LE
0.60
nH
February 1995
10
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 1 Common emitter scattering parameters: VCE = −5 V; IC = −5 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.759
−20.5
11.294
165.0
10.079
147.7
0.023
78.5
GUM
(dB)
0.945
−12.3
34.5
28.3
100
0.711
−49.0
0.050
64.5
0.834
−27.8
200
0.630
−88.0
8.082
126.7
0.076
51.2
0.631
−44.0
22.5
300
0.586
−113.6
6.355
113.1
0.090
45.1
0.491
−52.8
19.1
400
0.566
−130.5
5.116
104.1
0.099
42.9
0.403
−58.5
16.6
500
0.557
−141.8
4.266
97.5
0.107
42.8
0.349
−62.5
14.8
600
0.551
−150.5
3.653
92.2
0.113
43.7
0.316
−65.2
13.3
700
0.546
−157.1
3.193
87.7
0.120
44.9
0.293
−66.8
12.0
800
0.543
−162.7
2.838
83.9
0.127
46.2
0.277
−67.7
10.9
900
0.541
−167.6
2.551
80.4
0.133
47.6
0.263
−68.1
9.9
1000
0.541
−172.0
2.323
77.4
0.140
49.1
0.249
−68.7
9.1
1.975
71.7
7.7
1200
0.549
−179.4
0.153
51.6
0.223
−71.8
1400
0.559
174.8
1.737
66.4
0.168
53.8
0.212
−78.3
6.6
1600
0.565
170.3
1.555
61.7
0.183
55.2
0.215
−84.5
5.7
1800
0.566
165.6
1.420
57.7
0.197
56.8
0.220
−87.5
4.9
2000
0.575
160.5
1.310
54.2
0.213
58.3
0.215
−91.0
4.3
2200
0.594
156.3
1.217
51.1
0.228
59.7
0.208
−98.1
3.8
2400
0.613
153.7
1.135
47.7
0.242
60.6
0.217
−107.7
3.4
2600
0.623
151.4
1.064
44.8
0.255
60.9
0.242
−114.1
2.9
2800
0.618
148.2
1.019
41.7
0.271
61.5
0.264
−116.9
2.6
3000
0.621
144.5
0.975
39.3
0.289
61.9
0.275
−119.3
2.2
Table 2 Noise data: VCE = −5 V; IC = −5 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
1.80
2.55
0.307
0.358
86.5
121.0
February 1995
11
Rn
0.320
0.280
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 3 Common emitter scattering parameters: VCE = −5 V; IC = −10 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.608
−31.5
18.195
160.2
15.044
138.8
0.020
75.6
GUM
(dB)
0.900
−18.0
34.4
28.5
100
0.571
−72.1
0.041
60.6
0.725
−38.4
200
0.538
−114.5
10.475
117.4
0.059
51.1
0.490
−56.6
23.1
300
0.531
−136.1
7.676
106.0
0.070
49.3
0.360
−66.3
19.7
400
0.531
−149.0
5.989
98.6
0.079
50.2
0.287
−73.0
17.4
500
0.532
−157.3
4.907
93.2
0.088
51.8
0.245
−77.9
15.5
600
0.534
−163.6
4.161
88.9
0.097
53.8
0.221
−81.4
14.1
700
0.533
−168.6
3.613
85.1
0.106
55.4
0.204
−83.2
12.8
800
0.532
−172.9
3.195
81.8
0.116
56.9
0.192
−84.2
11.7
900
0.534
−176.8
2.866
78.8
0.125
58.1
0.179
−84.5
10.7
1000
0.535
179.7
2.603
76.2
0.135
59.3
0.167
−85.3
9.9
1200
0.545
173.7
2.206
71.2
0.153
61.0
0.145
−90.1
8.5
1400
0.557
169.2
1.931
66.6
0.172
62.0
0.140
−98.7
7.4
1600
0.561
165.5
1.724
62.2
0.191
62.3
0.149
−104.6
6.5
1800
0.563
161.2
1.570
58.5
0.208
62.7
0.154
−106.3
5.7
2000
0.574
156.6
1.447
55.2
0.227
63.2
0.150
−109.4
5.0
2200
0.593
153.0
1.343
52.4
0.244
63.7
0.148
−117.9
4.5
2400
0.612
150.6
1.251
49.2
0.260
64.0
0.165
−127.5
4.1
2600
0.620
148.8
1.171
46.3
0.274
63.5
0.192
−131.8
3.6
2800
0.616
146.0
1.122
43.2
0.290
63.3
0.213
−132.1
3.3
3000
0.618
142.3
1.074
40.7
0.309
63.2
0.223
−133.3
2.9
Table 4 Noise data: VCE = −5 V; IC = −10 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
2.40
2.90
0.304
0.321
94.7
136.9
February 1995
12
Rn
0.430
0.270
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 5 Common emitter scattering parameters: VCE = −5 V; IC = −20 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.450
−49.1
25.274
154.6
18.682
130.2
0.018
72.5
GUM
(dB)
0.830
−24.1
34.1
28.5
100
0.475
−99.1
0.034
59.2
0.608
−47.9
200
0.502
−135.9
11.661
110.7
0.047
54.5
0.379
−67.2
23.3
300
0.516
−151.8
8.244
101.0
0.058
55.6
0.270
−77.9
20.0
400
0.526
−161.1
6.342
94.7
0.068
58.1
0.215
−86.1
17.7
500
0.530
−167.1
5.156
90.2
0.079
60.1
0.185
−92.5
15.8
600
0.534
−171.9
4.350
86.3
0.089
61.9
0.169
−96.7
14.4
700
0.535
−175.7
3.768
83.0
0.101
63.2
0.157
−98.7
13.1
800
0.536
−179.1
3.326
80.1
0.112
64.0
0.147
−99.8
12.0
900
0.538
177.7
2.980
77.3
0.123
64.8
0.137
−100.5
11.1
1000
0.541
174.9
2.703
74.9
0.134
65.4
0.127
−101.9
10.2
1200
0.554
169.8
2.285
70.3
0.154
66.2
0.111
−109.1
8.8
1400
0.566
166.1
1.995
65.9
0.175
66.6
0.112
−118.8
7.7
1600
0.571
162.6
1.777
61.7
0.195
66.0
0.125
−122.9
6.8
1800
0.573
158.8
1.616
58.2
0.214
66.0
0.130
−123.1
6.0
2000
0.585
154.4
1.488
55.0
0.234
66.1
0.127
−126.2
5.3
2200
0.604
151.0
1.380
52.4
0.252
66.2
0.130
−135.1
4.8
2400
0.624
148.8
1.285
49.4
0.268
66.2
0.152
−143.0
4.4
2600
0.633
147.1
1.200
46.6
0.282
65.5
0.180
−144.7
3.9
2800
0.626
144.3
1.148
43.5
0.299
65.0
0.199
−143.3
3.5
3000
0.629
140.8
1.100
41.0
0.319
64.7
0.208
−143.7
3.2
Table 6 Noise data: VCE = −5 V; IC = −20 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
2.80
3.60
0.301
0.356
100.8
152.2
February 1995
13
Rn
0.610
0.280
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 7 Common emitter scattering parameters: VCE = −5 V; IC = −30 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.382
−62.3
28.063
151.4
19.479
126.1
0.016
71.2
GUM
(dB)
0.781
−27.1
33.7
28.3
100
0.453
−113.1
0.030
58.8
0.543
−51.8
200
0.502
−144.8
11.682
107.7
0.043
56.8
0.327
−70.7
23.1
300
0.521
−158.0
8.162
98.8
0.054
58.9
0.232
−81.5
19.8
400
0.532
−165.8
6.248
92.9
0.065
61.4
0.185
−89.9
17.5
500
0.537
−170.8
5.069
88.6
0.076
63.4
0.161
−96.5
15.7
600
0.542
−174.9
4.269
84.9
0.088
65.0
0.148
−100.5
14.2
700
0.543
−178.2
3.692
81.7
0.099
65.8
0.139
−102.3
13.0
800
0.545
178.7
3.258
78.8
0.111
66.4
0.131
−103.2
11.9
900
0.548
176.0
2.917
76.1
0.122
67.0
0.123
−103.6
10.9
1000
0.552
173.2
2.644
73.8
0.133
67.4
0.114
−104.8
10.1
1200
0.565
168.6
2.233
69.2
0.154
68.0
0.101
−112.5
8.7
1400
0.577
165.0
1.948
64.9
0.175
68.2
0.105
−121.9
7.6
1600
0.584
161.7
1.734
60.8
0.195
67.5
0.119
−125.4
6.7
1800
0.586
157.9
1.577
57.3
0.214
67.3
0.125
−125.0
5.8
2000
0.598
153.6
1.451
54.2
0.234
67.3
0.124
−128.3
5.2
2200
0.620
150.3
1.345
51.5
0.252
67.5
0.129
−137.0
4.8
2400
0.639
148.1
1.251
48.7
0.269
67.5
0.152
−144.6
4.3
2600
0.646
146.3
1.169
46.0
0.284
66.6
0.181
−146.1
3.8
2800
0.642
143.4
1.118
43.0
0.300
66.2
0.200
−144.7
3.4
3000
0.644
139.8
1.071
40.5
0.321
65.7
0.210
−145.0
3.1
Table 8 Noise data: VCE = −5 V; IC = −30 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
3.40
4.20
0.308
0.380
104.2
164.0
February 1995
14
Rn
0.830
0.310
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 9 Common emitter scattering parameters: VCE = −10 V; IC = −5 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.837
−16.8
11.098
166.4
10.061
150.4
0.020
80.4
GUM
(dB)
0.947
−10.2
36.0
29.9
100
0.781
−40.2
0.046
67.6
0.856
−23.6
200
0.670
−73.9
8.331
130.4
0.073
54.7
0.674
−38.2
23.6
300
0.592
−98.6
6.727
116.7
0.088
48.3
0.537
−46.3
19.9
400
0.547
−116.1
5.490
107.3
0.098
45.8
0.447
−51.2
17.3
500
0.523
−128.7
4.616
100.5
0.106
45.2
0.389
−54.5
15.4
600
0.507
−138.6
3.971
94.9
0.114
45.6
0.352
−56.5
13.8
700
0.495
−146.1
3.476
90.3
0.121
46.4
0.327
−57.6
12.5
800
0.487
−152.5
3.094
86.3
0.129
47.3
0.309
−58.0
11.4
900
0.481
−158.1
2.782
82.6
0.136
48.2
0.294
−57.8
10.4
1000
0.478
−163.1
2.532
79.5
0.143
49.3
0.279
−57.8
9.5
2.155
73.7
8.1
1200
0.483
−171.8
0.156
51.0
0.250
−59.2
1400
0.493
−178.2
1.895
68.4
0.171
52.4
0.234
−63.8
7.0
1600
0.499
176.9
1.694
63.6
0.185
53.2
0.232
−69.2
6.1
1800
0.501
172.0
1.541
59.6
0.198
54.4
0.233
−71.8
5.3
2000
0.509
166.5
1.418
55.9
0.212
55.5
0.227
−74.1
4.6
2200
0.529
161.8
1.317
52.6
0.224
56.5
0.215
−79.5
4.0
2400
0.550
158.8
1.228
49.0
0.236
57.2
0.215
−88.7
3.6
2600
0.564
156.7
1.148
45.9
0.246
57.5
0.232
−96.4
3.1
2800
0.564
153.7
1.100
42.8
0.259
58.2
0.253
−100.1
2.8
3000
0.569
150.0
1.051
40.2
0.274
58.9
0.262
−102.7
2.4
Table 10 Noise data: VCE = −10 V; IC = −5 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
2.00
2.50
0.340
0.380
73.0
105.0
February 1995
15
Rn
0.440
0.360
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 11 Common emitter scattering parameters: VCE = −10 V; IC = −10 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.744
−24.2
18.034
162.0
15.339
142.3
0.019
77.2
GUM
(dB)
0.902
−15.2
35.9
30.0
100
0.666
−56.4
0.040
63.6
0.757
−33.0
200
0.556
−95.4
11.171
121.0
0.059
53.5
0.533
−49.6
24.0
300
0.507
−119.1
8.353
109.0
0.071
50.8
0.398
−57.9
20.5
400
0.485
−134.4
6.576
101.2
0.081
51.0
0.319
−63.2
18.0
500
0.474
−144.5
5.412
95.6
0.090
52.2
0.272
−66.9
16.1
600
0.469
−152.4
4.597
91.1
0.099
53.7
0.243
−69.2
14.6
700
0.465
−158.4
3.997
87.2
0.108
54.9
0.224
−70.3
13.3
800
0.461
−163.5
3.537
83.9
0.118
56.1
0.209
−70.3
12.2
900
0.459
−168.1
3.170
80.8
0.128
57.0
0.196
−69.7
11.2
1000
0.460
−172.3
2.875
78.2
0.137
57.8
0.183
−69.3
10.4
1200
0.469
−179.3
2.435
73.1
0.155
59.1
0.157
−71.0
8.9
1400
0.482
175.4
2.130
68.4
0.173
59.8
0.144
−77.4
7.8
1600
0.488
171.5
1.898
64.1
0.191
59.7
0.147
−83.7
6.8
1800
0.489
167.2
1.723
60.4
0.207
59.9
0.150
−85.2
6.0
2000
0.501
162.2
1.584
57.0
0.224
60.3
0.144
−87.1
5.3
2200
0.522
158.0
1.469
54.0
0.239
60.6
0.134
−94.3
4.8
2400
0.543
155.4
1.367
50.7
0.253
60.7
0.140
−106.3
4.3
2600
0.557
153.8
1.278
47.8
0.264
60.3
0.162
−113.7
3.9
2800
0.556
151.0
1.222
44.7
0.278
60.4
0.183
−115.3
3.5
3000
0.560
147.6
1.168
42.1
0.295
60.4
0.192
−116.6
3.1
Table 12 Noise data: VCE = −10 V; IC = −10 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
2.40
2.90
0.270
0.350
83.0
115.0
February 1995
16
Rn
0.400
0.350
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 13 Common emitter scattering parameters: VCE = −10 V; IC = −20 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.655
−33.6
25.207
156.9
19.459
133.9
0.018
74.2
GUM
(dB)
0.840
−20.3
35.8
29.8
100
0.568
−73.8
0.035
61.0
0.644
−41.3
200
0.487
−113.4
12.634
113.7
0.050
54.9
0.416
−58.0
24.0
300
0.463
−134.1
9.050
103.5
0.061
55.1
0.299
−66.3
20.6
400
0.456
−146.7
6.997
96.9
0.072
56.9
0.236
−72.0
18.2
500
0.453
−154.7
5.702
92.1
0.082
58.5
0.200
−76.3
16.3
600
0.453
−161.0
4.818
88.2
0.093
60.0
0.179
−79.0
14.8
700
0.451
−165.7
4.171
84.8
0.104
61.0
0.165
−79.9
13.5
800
0.451
−169.9
3.683
81.8
0.115
61.8
0.155
−79.9
12.4
900
0.452
−173.7
3.297
79.0
0.126
62.4
0.143
−79.0
11.4
1000
0.454
−177.3
2.986
76.6
0.137
62.9
0.132
−78.5
10.6
1200
0.467
176.6
2.521
71.9
0.157
63.4
0.110
−81.6
9.2
1400
0.482
172.4
2.200
67.6
0.176
63.4
0.103
−90.5
8.0
1600
0.490
168.8
1.956
63.6
0.195
62.8
0.110
−97.4
7.1
1800
0.493
164.8
1.774
60.1
0.212
62.7
0.114
−98.0
6.2
2000
0.505
159.8
1.630
56.8
0.230
62.7
0.109
−100.1
5.6
2200
0.528
155.9
1.509
54.1
0.245
62.8
0.103
−109.7
5.0
2400
0.550
153.6
1.405
51.0
0.260
62.7
0.115
−122.8
4.6
2600
0.563
151.9
1.312
48.1
0.273
62.2
0.141
−128.2
4.1
2800
0.562
149.2
1.253
45.2
0.287
62.0
0.160
−127.8
3.7
3000
0.565
145.8
1.199
42.6
0.305
61.7
0.169
−128.3
3.4
Table 14 Noise data: VCE = −10 V; IC = −20 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
3.00
3.60
0.240
0.320
98.0
131.0
February 1995
17
Rn
0.440
0.400
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
Table 15 Common emitter scattering parameters: VCE = −10 V; IC = −30 mA.
s21
s12
s22
s11
f
(MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
0.617
−39.1
28.045
153.9
20.389
129.6
0.017
73.1
GUM
(dB)
0.797
−22.6
35.4
29.4
100
0.529
−82.4
0.032
60.3
0.583
−44.1
200
0.464
−120.8
12.630
110.4
0.047
56.4
0.364
−59.3
23.7
300
0.449
−139.7
8.920
101.0
0.058
57.3
0.259
−66.3
20.3
400
0.446
−151.0
6.853
94.8
0.069
59.4
0.204
−71.2
17.9
500
0.446
−158.1
5.569
90.3
0.081
60.9
0.174
−75.0
16.0
600
0.448
−163.5
4.694
86.5
0.092
62.2
0.158
−77.2
14.5
700
0.449
−167.8
4.060
83.3
0.103
63.0
0.147
−77.7
13.2
800
0.450
−171.7
3.579
80.4
0.115
63.6
0.139
−77.1
12.1
900
0.452
−175.1
3.204
77.7
0.126
63.8
0.131
−75.9
11.2
1000
0.456
−178.5
2.902
75.4
0.136
64.1
0.122
−75.0
10.3
1200
0.472
175.9
2.448
70.8
0.157
64.3
0.103
−77.7
8.9
1400
0.488
171.7
2.134
66.6
0.176
64.2
0.097
−87.1
7.8
1600
0.498
168.1
1.898
62.5
0.194
63.6
0.106
−94.6
6.9
1800
0.502
164.0
1.721
59.1
0.211
63.4
0.112
−95.7
6.0
2000
0.516
159.3
1.580
56.0
0.229
63.5
0.108
−98.0
5.4
2200
0.539
155.4
1.464
53.2
0.245
63.7
0.103
−108.1
4.8
2400
0.562
152.9
1.362
50.2
0.260
63.6
0.116
−121.5
4.4
2600
0.575
151.2
1.273
47.4
0.272
63.0
0.141
−127.4
3.9
2800
0.573
148.4
1.217
44.5
0.287
62.9
0.162
−127.3
3.5
3000
0.576
144.7
1.164
42.0
0.305
62.6
0.172
−128.1
3.2
Table 16 Noise data: VCE = −10 V; IC = −30 mA.
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
500
1000
3.60
4.20
0.250
0.310
101.0
143.0
February 1995
18
Rn
0.550
0.480
Philips Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
PACKAGE OUTLINE
1.00
max
handbook, full pagewidth
0.2 M A
0.2 M B
0.1
max
0.4
0.2
0.2
A
3
1.35
1.15
2.2
2.0
1
2
0.3
0.1
1.4
1.2
0.25
0.10
2.2
1.8
B
MBC871
Dimensions in mm.
Fig.19 SOT323.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
February 1995
19
Philips Semiconductors – a worldwide company
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Dr. Annie Besant Rd., Worli, BOMBAY 400 018,
Tel. (022)4938 541, Fax. (022)4938 722
Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,
P.O. Box 4252, JAKARTA 12950,
Tel. (021)5201 122, Fax. (021)5205 189
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. (01)640 000, Fax. (01)640 200
Italy: Viale F. Testi, 327, 20162 MILANO,
Tel. (02)6752.1, Fax. (02)6752.3350
Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, KOKIO 108,
Tel. (03)3740 5101, Fax. (03)3740 0570
Korea: (Republic of) Philips House, 260-199 Itaewon-dong,
Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)757 5511, Fax. (03)757 4880
Mexico: Philips Components, 5900 Gateway East, Suite 200,
EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556
Netherlands: Postbus 90050, 5600 PB EINDHOVEN,
Tel. (040)78 37 49, Fax. (040)78 83 99
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (22)74 8000, Fax. (22)74 8341
Philips Semiconductors
Pakistan: Philips Markaz, M.A. Jinnah Rd., KARACHI 3,
Tel. (021)577 039, Fax. (021)569 1832
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,
106 Valero St. Salcedo Village, P.O. Box 911, MAKATI,
Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474
Portugal: Av. Eng. Duarte Pacheco 6, 1009 LISBOA Codex,
Tel. (01)683 121, Fax. (01)658 013
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. (65)350 2000, Fax. (65)251 6500
South Africa: 195-215 Main Road, Martindale,
P.O. Box 7430,JOHANNESBURG 2000,
Tel. (011)470-5433, Fax. (011)470-5494
Spain: Balmes 22, 08007 BARCELONA,
Tel. (03)301 6312, Fax. (03)301 42 43
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,
Tel. (0)8-632 2000, Fax. (0)8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (01)488 2211, Fax. (01)481 7730
Taiwan: 69, Min Sheng East Road, Sec 3, P.O. Box 22978,
TAIPEI 10446, Tel. (2)509 7666, Fax. (2)500 5899
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna - Trad Road Km. 3
Prakanong, BANGKOK 10260,
Tel. (2)399-3280 to 9, (2)398-2083, Fax. (2)398-2080
Turkey: Talatpasa Cad. No. 5, 80640 LEVENT/ISTANBUL,
Tel. (0212)279 2770, Fax. (0212)269 3094
United Kingdom: Philips Semiconductors Limited, P.O. Box 65,
Philips House, Torrington Place, LONDON, WC1E 7HD,
Tel. (071)436 41 44, Fax. (071)323 03 42
United States: INTEGRATED CIRCUITS:
811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. (800)234-7381, Fax. (708)296-8556
DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd.,
P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404,
Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BAF-1,
P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. +31-40-724825
SCD28
© Philips Electronics N.V. 1994
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