ETC BIC701M

BIC701M
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-703C (Z)
4th. Edition
Nov. 1, 1998
Features
• Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
• High gain;
PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)
• Low noise;
NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes: 1. Marking is “AZ–”.
2. BIC701M is individual type number of HITACHI BICMIC.
BIC701M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate1 to source voltage
VG1S
+6
–0
V
Gate2 to source voltage
VG2S
+6
–0
V
Drain current
ID
20
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200µA
VG2S = 0,VG1 = open
Gate1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +10µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+6
—
—
V
I G2 = +10µA
VG1S = VDS = 0
Gate1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5V
VG2S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
+100
nA
VG2S = +5V
VG1S = VDS = 0
Gate2 to source cutoff voltage VG2S(off)
0.5
0.7
1.0
V
VDS = 5V, ID = 100µA
VG1 = open
Drain current
I DS(op)
7
10
13
mA
VDS = 5V , VG2S = 4V
VG1 = open
Forward transfer admittance
|yfs|
22
27
32
mS
VDS = 5V, ID = 10mA
VG2S =4V, f = 1kHz
Input capacitance
c iss
1.6
2.0
2.3
pF
VDS = 5V, VG2S =4V
Output capacitance
c oss
0.6
1.0
1.4
pF
VG1 = open
Reverse transfer capacitance c rss
—
0.024
0.05
pF
f = 1MHz
Power gain
23
27
—
dB
VDS = 5V, VG2S =4V
PG1
VG1 = open
Noise figure
NF1
—
1.1
1.6
dB
f = 200MHz
Power gain
PG2
17
21.5
—
dB
VDS = 5V, VG2S =4V
VG1 = open
Noise figure
2
NF2
—
1.75
2.3
dB
f = 900MHz
BIC701M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
200MHz Power Gain, Noise Figure Test Circuit
1000p
1000p
47k
VT
VG2
VT
1000p
47k
1000p
47k
BBFET
Output(50¶)
1000p
L2
Input(50¶)
L1
10p max
1000p
1000p
36p
RFC
1SV70
1SV70
1000p
VD
[email protected] [email protected] (¶ )
@@
[email protected] (F)
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BIC701M
900MHz
Power Gain,
Noise Test Circuit
VD
VG2
C5
C4
R1
C3
R2
RFC
D
G2
Output
L3
L4
G1
Input
S
L1
L2
C1
C1, C2F
C3 F
C4, C5F
R1 F
R2 F
C2
Variable Capacitori10pF MAX)
Disk Capacitori1000pF)
Air Capacitori1000pF)
47 k¶
4.7 k¶
L2F
L1F
10
3
3
8
10
26
i1mm Copper wirej
UnitFmm
21
L4F
L3F
18
10
10
7
7
29
RFCF1mm Copper wire with enamel 4turns inside d
4
i
200
Maximum Channel Power
Dissipation Curve
20
I D (mA)
150
100
50
16
12
8
3V
2V
4
0
50
100
150
0
200
1
2
3
4
Drain to Source Voltage
Ta (°C)
5
V DS (V)
Power Gain vs.
Gate2 to Source Voltage
Drain Current vs. Gate1 Voltage
30
20
VG2S = 4 V
3V
25
Power Gain PG (dB)
I D (mA)
VG2S = 4 V
1V
Ambient Temperature
Drain Current
Typical Output Characteristics
VG1 = open
Drain Current
Channel Power Dissipation
Pch (mW)
BIC701M
15
2V
10
5
1.0
Gate1 Voltage V G1
2.0
(V)
15
10
5
1V
0
20
0
1
V DS = 5 V
V G1 = open
f = 200 MHz
4
2
3
Gate2 to Source Voltage V G2S (V)
5
BIC701M
Noise Figure vs.
Gate2 to Source Voltage
Power Gain vs.
Gate2 to Source Voltage
4
30
V DS = 5 V
V G1 = open
f = 200 MHz
3
2
1
0
1
25
Power Gain PG (dB)
Noise Figure NF (dB)
5
20
15
10
V DS = 5 V
V G1 = open
f = 900 MHz
5
0
1
4
2
3
Gate2 to Source Voltage V G2S (V)
4
2
3
Gate2 to Source Voltage V G2S (V)
Power Gain vs.
Drain to Source Voltage
Noise Figure vs.
Gate2 to Source Voltage
4
30
V DS = 5 V
V G1 = open
f = 900 MHz
3
2
1
0
1
6
25
Power Gain PG (dB)
Noise Figure NF (dB)
5
20
15
10
VG2S = 4 V
V G1 = open
f = 200 MHz
5
4
2
3
Gate2 to Source Voltage V G2S (V)
0
1
2
3
4
5
Drain to Source Voltage
6
V DS (V)
7
BIC701M
Power Gain vs.
Drain to Source Voltage
Noise Figure vs.
Drain to Source Voltage
30
VG2S = 4 V
V G1 = open
f = 200 MHz
3
25
Power Gain PG (dB)
Noise Figure NF (dB)
4
2
1
20
15
10
VG2S = 4 V
V G1 = open
f = 900 MHz
5
0
1
2
3
4
5
Drain to Source Voltage
6
0
1
7
V DS (V)
Noise Figure vs.
Drain to Source Voltage
Gain Reduction vs.
Gate2 to Source Voltage
0
Gain Reduction GR (dB)
Noise Figure NF (dB)
4
3
2
1
0
2
3
4
5
6
7
Drain to Source Voltage V DS (V)
VG2S = 4 V
V G1 = open
f = 900 MHz
10
20
30
40
50
2
3
4
5
Drain to Source Voltage
6
V DS (V)
7
V DS = 5 V
V G1 = open
V G2S = 4 V
f = 200 MHz
4
2
3
1
0
Gate2 to Source Voltage V G2S (V)
7
BIC701M
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
10
20
30
V DS = 5 V
V G1 = open
V G2S = 4 V
f = 900 MHz
40
50
8
4
4
2
3
1
0
Gate2 to Source Voltage V G2S (V)
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
0
3
2
V DS = 4 V
V G1 = open
f = 1 MHz
1
0
1
2
3
4
Gate2 to Source Voltage V G2S (V)
BIC701M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition : V DS = 5 V , V G1 = open
V G2S = 4 V , Zo =50 Ω
Test Condition : V DS = 5 V , V G1 = open
V G2S = 4 V , Zo =50 Ω
50 ‘ 1000 MHz (50 MHz step)
50 ‘ 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition : V DS = 5 V , V G1 = open
V G2S = 4 V , Zo =50 Ω
50 ‘ 1000 MHz (50 MHz step)
–2
–.6
–.8
–1
–1.5
Test Condition : V DS = 5 V , V G1 = open
V G2S = 4 V , Zo =50 Ω
50 ‘ 1000 MHz (50 MHz step)
9
BIC701M
Sparameter (VDS = VG1 = 5V, VG2S = 4V, VG1 = open, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.994
–3.1
2.54
175.5
0.00132
50.0
0.978
–2.4
100
0.993
–6.6
2.52
171.0
0.00201
59.8
0.981
–5.1
150
0.988
–10.5
2.51
166.4
0.00228
66.1
0.979
–7.5
200
0.983
–14.1
2.49
161.6
0.00323
66.7
0.979
–10.1
250
0.977
–17.9
2.46
157.2
0.00420
70.2
0.976
–12.7
300
0.970
–21.8
2.43
152.8
0.00514
71.9
0.974
–15.1
350
0.963
–25.4
2.40
148.6
0.00532
76.1
0.971
–17.6
400
0.951
–28.8
2.37
143.7
0.00629
74.2
0.969
–20.1
450
0.943
–32.4
2.34
139.4
0.00665
70.8
0.966
–22.4
500
0.933
–35.4
2.29
135.1
0.00700
71.6
0.962
–24.9
550
0.918
–39.1
2.25
131.1
0.00756
69.3
0.958
–27.3
600
0.906
–42.0
2.21
127.2
0.00790
68.1
0.954
–29.7
650
0.895
–45.5
2.17
123.0
0.00836
67.6
0.951
–32.2
700
0.882
–48.7
2.13
119.4
0.00820
66.1
0.946
–34.4
750
0.879
–51.1
2.09
115.6
0.00818
65.9
0.942
–36.8
800
0.860
–54.6
2.05
111.7
0.00819
66.5
0.938
–39.2
850
0.845
–58.3
2.02
107.8
0.00798
70.7
0.933
–41.5
900
0.835
–60.7
1.96
104.2
0.00787
71.9
0.929
–43.8
950
0.827
–63.3
1.92
100.5
0.00727
73.1
0.924
–46.2
1000
0.812
–66.4
1.88
97.0
0.00758
75.6
0.919
–48.5
10
BIC701M
Package Dimensions (Unit: mm)
+ 0.3
2.8 – 0.1
+ 0.1
0.4 – 0.05
0.4 – 0.05
3
0.65 – 0.3
+ 0.1
+ 0.1
1.9
0.95 0.95
+ 0.1
0.16 – 0.06
+ 0.2
2.8 – 0.6
1.5
2
0 ~ 0.1
0.95
0.85
0.65– 0.3
+ 0.1
0.6 – 0.05
+ 0.1
1
4
+ 0.1
0.4 – 0.05
+ 0.2
1.1– 0.1
0.3
1.8
Hitachi Code
EIAJ
JEDEC
MPAK–4
SC–61AA
—
11
BIC701M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
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Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
12