BULD26 MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 3 1 2 ■ DESCRIPTION The BULD26 is manufactured using medium voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. IPAK (TO-251) (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VC ES Collector-Emitter Voltage (V BE = 0V) 600 V V CEO Collector-Emitter Voltage (I B = 0) 300 V V EBO Emitter-Base Voltage (IC = 0) 10 V Collector Current 4 A I CM IB Collector Peak Current (t p < 5 ms) Base Current 8 2 A A IB M Base Peak Current (tp < 5 ms) 4 A IC Parameter o P tot Total Dissipation at Tc = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature January 1995 20 W -65 to 150 o C 150 o C 1/6 BULD26 THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 6.25 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CE S Collector Cut-off Current (V BE = 0) V CE = 600 V V CE = 600 V I CEO Collector Cut-off Current (I B = 0) V CE = 300 V V CEO(sus) Collector-Emitter Sustaining Voltage V EBO I C = 100 mA Min. Typ. Tj = 125 oC L = 25 mH Max. Unit 100 500 µA µA 250 µA 300 V 10 V Emitter-Base Voltage I E = 10 mA V CE (sat)∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 0.5 0.7 1 V V V VB E(sat)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.6 A 1.1 1.2 1.3 V V V DC Current Gain I C = 10 mA IC = 1 A V CE = 5 V V CE = 3 V h FE ∗ 45 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 3 A V BE (off) = -5 V V CL = 250 V I B1 = 0.6 A RBB = 0 Ω L = 200 µH 0.8 65 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 3 A V BE (off) = -5 V V CL = 250 V T j = 125 o C I B1 = 0.6 A RBB = 0 Ω L = 200 µH 1.1 120 ∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 10 15 Derating Curves 1.5 130 µs ns µs ns BULD26 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BULD26 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BULD26 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 5/6 BULD26 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6