ETC DG211BDQ

DG211B/212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 50 Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 120 ns
Low Charge Injection—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Superior to DG211/212
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The DG211B/212B analog switches are highly improved
versions of the industry-standard DG211/212. These devices
are fabricated in Vishay Siliconix’ proprietary silicon gate
CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
up to 22 V, and have an improved continuous current rating
of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc. An
improved charge injection compensation design minimizes
switching transients. The DG211B and DG212B can handle
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (See Truth Table.)
DG211B
Dual-In-Line, SOIC and TSSOP
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
Logic
V–
4
13
V+
GND
5
12
VL
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
DG211B
DG212B
0
ON
OFF
1
OFF
ON
Logic “0” 0.8 V
Logic “1” 2.4 V
Top View
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
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4-1
DG211B/212B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG211BDJ
16-Pin Plastic DIP
DG212BDJ
DG211BDY
–40
40 to 85
85_C
C
16-Pin Narrow SOIC
DG212BDY
DG211BDQ
16-Pin TSSOP
DG212BDQ
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
SX
VL
Level
Shift/
Drive
INX
V–
V+
DX
GND
V–
FIGURE 1.
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Document Number: 70040
S-00788—Rev. H, 24-Apr-00
DG211B/212B
Vishay Siliconix
D Suffix
Test Conditions
Unless Otherwise Specified
Parameter
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
–40 to 85_C
Tempa
Minb
VANALOG
Full
–15
rDS(on)
Room
Full
45
Room
2
Symbol
Typc
Maxb
Unit
15
V
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
rDS(on) Match
VD = 10 V,, IS = 1 mA
DrDS(on)
85
Source Off Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room
Full
–0.5
–5
0.01
0.5
5
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room
Full
–0.5
–5
0.01
0.5
5
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room
Full
–0.5
–10
0.02
0.5
10
2.4
W
nA
A
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
V
VINH or VINL
CIN
Full
0.8
–1
Room
1
5
mA
pF
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
Off Isolation
OIRR
Channel-to-Channel Crosstalk
XTALK
VS =10 V
See Figure
S
Fi
2
Room
300
Room
200
CL = 1000 pF, Vg= 0 V, Rg = 0 W
Room
1
Room
5
Room
5
VD = VS = 0 V, f = 1 MHz
Room
16
CL = 15 p
pF,, RL = 50 W
VS = 1 VRMS, f = 100 kH
kHz
Room
90
Room
95
VS = 0 V, f = 1 MHz
ns
pC
pF
F
dB
Power Supply
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Logic Supply Current
IL
Room
Full
VOP
Full
VIN = 0 or 5 V
Power Supply Range for
Continuous Operation
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
10
50
–10
–50
mA
A
10
50
4.5
22
V
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DG211B/212B
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
D Suffix
Test Conditions
Unless Otherwise Specified
–40 to 85_C
V+ = 12 V, V– = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
VANALOG
Full
0
rDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
Turn-On Time
tON
Room
300
Turn-Off Time
tOFF
VS = 8 V
See Figure
S
Fi
2
Room
200
CL = 1 nF, Vgen= 6 V, Rgen = 0 W
Room
Parameter
Symbol
Typc
Maxb
Unit
12
V
90
160
200
W
Analog Switch
Analog Signal Ranged
Drain-Source On-Resistance
Dynamic Characteristics
Charge Injection
Q
ns
4
pC
Power Supply
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Logic Supply Current
IL
Room
Full
VOP
Full
VIN = 0 or 5 V
Power Supply Range for
Continuous Operation
10
50
–10
–50
mA
A
10
50
4.5
25
V
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
100
r DS(on)– Drain-Source On-Resistance ( W )
r DS(on)– Drain-Source On-Resistance ( W )
110
100
90
5 V
80
70
10 V
60
15 V
50
40
20 V
30
20
10
–20 –16 –12
–8
–4
0
4
8
VD – Drain Voltage (V)
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12
16
20
90
V+ = 15 V
V– = –15 V
80
70
60
125_C
50
85_C
40
25_C
30
–55_C
20
10
0
–15
–10
–5
0
5
10
15
VD – Drain Voltage (V)
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
DG211B/212B
Vishay Siliconix
_ rDS(on) vs. VD and Single Power Supply Voltages
Leakage Currents vs. Analog Voltage
40
V+ = 5 V
225
V+ = 22 V
V– = –22 V
TA = 25_C
30
200
20
175
150
I S,I D – Current (pA)
r DS(on)– Drain-Source On-Resistance ( )
250
7V
125
10 V
100
12 V
15 V
75
ID(on)
10
IS(off), ID(off)
0
–10
–20
50
–30
25
–40
–20
0
0
2
4
6
8
10
12
14
16
–15
–10
VD – Drain Voltage (V)
0
5
10
15
20
VANALOG – Analog Voltage (V)
QS, QD – Charge Injection vs. Analog Voltage
Leakage Current vs. Temperature
30
1 nA
V+ = 15 V
V– = –15 V
VS, VD = 14 V
20
100 pA
10
Q – Charge (pC)
I S,I D – Current
–5
IS(off), ID(off)
0
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
–10
10 pA
–20
1 pA
–55
–35
–15
5
25
45
65
85
–30
–15
105 125
–10
–5
0
5
10
15
VANALOG – Analog Voltage (V)
Temperature (_C)
Off Isolation vs. Frequency
120
V+ = +15 V
V– = –15 V
110
100
OIRR (dB)
90
RL = 50 80
70
60
50
40
10 k
100 k
1M
10 M
f – Frequency (Hz)
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
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4-5
DG211B/212B
Vishay Siliconix
+15 V
V+
D
S
VS = +2 V
Logic
Input
VO
3V
tr <20 ns
tf <20 ns
50%
0V
tOFF
IN
V–
GND
CL
35 pF
RL
1 kW
3V
90%
Switch
Output
–15 V
VO
tON
RL
VO = VS
RL + rDS(on)
FIGURE 2. Switching Time
C
+15 V
+15 V
C
V+
S1
VS
V+
S
VS
VO
D
D1
Rg = 50 W
50 W
IN1
Rg = 50 W
0V, 2.4 V
RL
IN
0V, 2.4 V
S2
NC
GND
V–
C
RL
IN2
0V, 2.4 V
GND
XTALK Isolation = 20 log
VS
VO
FIGURE 3. Off Isolation
VO
–15 V
FIGURE 4. Channel-to-Channel Crosstalk
DVO
VO
V+
S
D
IN
Vg
VO
CL
1000 pF
3V
GND
C
VS
+15 V
Rg
V–
C = RF bypass
–15 V
Off Isolation = 20 log
VO
D2
INX
ON
OFF
ON
V–
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
–15 V
FIGURE 5. Charge Injection
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Document Number: 70040
S-00788—Rev. H, 24-Apr-00
DG211B/212B
Vishay Siliconix
+15 V
+5V
VL
V+
Logic Input
Low = Sample
High = Hold
1 kW
+15 V
DG211B
+15 V
–15 V
–
J202
LM101A
VIN
2N4400
+
5 MW
50 pF
5.1 MW
200 W
VOUT
1000 pF
V–
J507
J500
30 pF
–15 V
Aquisition Time
= 25 ms
Aperature Time
= 1 ms
Sample to Hold Offset
= 5 mV
Droop Rate
= 5 mV/s
–15 V
FIGURE 6. Sample-and-Hold
+15 V
160
V1
C4
fC3
Select
TTL
Control
fC2
Select
fC1
Select
150 pF
120
C3
1500 pF
Voltage Gain – dB
fC4
Select
C2
0.015 mF
C1
0.15 mF
80
fC1
fC2
fC3
fC4
40
fL1
0
V–
DG211B
fL2
fL3
fL4
GND
–40
1
10
100
–15 V
1k
R3 = 1 MW
+15 V
–15 V
–
R1 = 10 kW
LM101A
+
R2 = 10 kW
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2pR3CX
100 k
1M
Max Attenuation =
rDS(on)
10 kW
R3
R1
= 100 (40 dB)
1
2pR1CX
fL (Unity Gain Frequency) =
30 pF
10 k
Frequency – Hz
–47 dB
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
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4-7
DG211B/212B
Vishay Siliconix
VIN1
+5 V
+15 V
VL
V+
30 pF
+15 V
+
LM101A
VIN2
–
+15 V
DG419
–15 V
RF1
18 k
RF2
9.9 k
RF3
100 k
RG1
2 k
RG2
100 RG3
100 DG212B
CH
GND
V–
–15 V
Gain =
Gain 1 (x1)
RF + RG
Gain 2 (x10)
RG
Gain 3 (x100)
Gain 4 (x1000)
V–
GND
Logic High = Switch On
–15 V
FIGURE 8.
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A Precision Amplifier with Digitally Programable Input and Gains
Document Number: 70040
S-00788—Rev. H, 24-Apr-00