DTA115GUA / DTA115GKA / DTA115GSA Transistors Digital transistors (built-in resistor) DTA115GUA / DTA115GKA / DTA115GSA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 DTA115GUA 0.7 !External dimensions (Units : mm) 1.25 0.2 2.1 0.1Min. 0~0.1 0.15 !Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved. Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 !Equivalent circuit C (1) DTA115GKA R E : Emitter C : Collector B : Base (2) (3) 0.4 E 0.95 0.95 1.9 2.9 B 1.6 0.3Min. Limits Unit Collector-base voltage Collector-emitter voltag VCBO VCEO −50 Emitter-base voltage Collector current VEBO IC −5 −100 V V V mA 200 mW 300 mW 150 °C °C Collector power dissipation DTA115GUA / DTA115GKA −50 Pc DTA115GSA Junction temperature Storage temperature Tj Tstg DTA115GSA 1.1 (1) Emitter (2) Base (3) Collector 4 2 (15Min.) 3Min. −55~+150 Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 3 Symbol Parameter 0~0.1 !Absolute maximum ratings (Ta=25°C) 0.8 0.15 2.8 !Package, marking, and packaging specifications Type Package DTA115GUA UMT3 Marking Packaging code K19 T106 Basic ordering unit (pieces) 3000 DTA115GKA SMT3 K19 T146 3000 DTA115GSA 2.5 SPT − TP 5000 (1) (2) (3) !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltag Emitter-base breakdown voltage Collector cutoff current BVCBO BVCEO −50 −50 −5 − − − − − − − − −0.5 V V V µA Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio IEBO hFE −30 − 82 − − − −58 −0.3 − µA V − R fT 70 − 100 250 130 − kΩ Emitter-base resistance Transition frequency ∗ Transition frequency of the device. BVEBO ICBO VCE(sat) 0.5 0.45 5 ROHM : SPT EIAJ : SC-72 Parameter 0.45 MHz Conditions IC=−50µA IC=−1mA IE=−72µA VCB=−50V VEB=−4V IC=−5mA, IB=−0.25mA IC=−5mA, VCE=−5V − VCE=−10V, IE=5mA, f=100MHz ∗ Taping specifications (1) Emitter (2) Collector (3) Base