MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-12A FL14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ 2.6 ± 0.2 ➀ ➁ ➂ ● 10V DRIVE ● VDSS ............................................................................... 600V ● rDS (ON) (MAX) .............................................................. 0.75Ω ● ID ......................................................................................... 14A 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION SMPS, Inverter type fluorescent light sets, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 600 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V ±30 14 42 V A A IDA PD Tch Tstg Viso Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200µH 14 40 –55 ~ +150 –55 ~ +150 2000 A W °C °C V Weight Typical value 2.0 g — Parameter Conditions AC for 1minute, Terminal to case Sep. 2001 MITSUBISHI Nch POWER MOSFET FL14KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions Limits Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 10V ID = 7A, VGS = 10V ID = 7A, VDS = 10V — 2.0 — — — 3.0 0.58 4.06 1 4.0 0.75 5.25 mA V Ω V — — — — 11 1600 210 80 — — — — S pF pF pF — — — — 30 60 290 120 — — — — ns ns ns ns — 1.5 2.0 V — — 3.13 °C/W VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω IS = 7A, VGS = 0V Channel to case Sep. 2001