a FEATURES Low VOS (VBE Match): 40 V typ, 100 V max Low TCVOS: 0.5 V/ⴗC max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form Matched Monolithic Dual Transistor MAT01 PIN CONNECTION TO-78 (H Suffix) PRODUCT DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very high hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages. NOTE: Substrate is connected to case. BURN-IN CIRCUIT REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 World Wide Web Site: http://www.analog.com Fax: 617/326-8703 © Analog Devices, Inc., 1997 MAT01–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ VCB = 15 V, IC = 10 A, TA = 25ⴗC, unless otherwise noted.) Parameter Symbol Conditions Min Breakdown Voltage Offset Voltage Offset Voltage Stability First Month Long Term Offset Current Bias Current Current Gain BVCEO VOS IC = 100 µA 45 VOS/Time (Note 1) (Note 2) Current Gain Match Low Frequency Noise Voltage Broadband Noise Voltage Noise Voltage Density Offset Voltage Change Offset Current Change Collector-Base Leakage Current Collector-Emitter Leakage Current Collector-Collector Leakage Current Collector Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-Collector Capacitance IOS IB hFE ∆hFE MAT01AH Typ Max 500 MAT01GH Typ Min 45 0.04 IC = 10 nA IC = 10 µA IC = 10 mA IC = 10 µA 100 nA ≤ IC ≤ 10 mA Min 2.0 0.2 0.1 13 590 770 840 0.7 0.8 0.1 0.10 0.6 20 250 3.0 2.0 0.2 0.2 18 430 560 610 1.0 1.2 Units 0.5 V mV 3.2 40 µV/Mo µV/Mo nA nA 8.0 % % 0.4 µV p-p en p-p 0.1 Hz to 10 Hz3 0.23 en rms 1 Hz to 10 kHz 0.60 en ∆VOS/∆VCB ∆IOS/∆VCB fO = 10 Hz3 fO = 100 Hz3 fO = 1000 Hz3 0 ≤ VCB ≤ 30 V 0 ≤ VCB ≤ 30 V 7.0 6.1 6.0 0.5 2 9.0 7.6 7.5 3.0 15 7.0 6.1 6.0 0.8 3 9.0 7.6 7.5 8.0 70 nV/√Hz nV/√Hz nV/√Hz µV/V pA/V ICBO VCB = 30 V, IE = 04 15 50 25 200 pA ICES VCE = 30 V, VBE = 04, 5 50 200 90 400 pA ICC VCE(SAT) 20 0.12 0.8 450 2.8 200 0.20 30 0.12 0.8 450 2.8 400 0.25 fT COB VCC = 30 V5 IB = 0.1 mA, IC = 1 mA IB = 1 mA, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 15 V, IE = 0 pA V V MHz pF CCC VCC = 0 8.5 ELECTRICAL CHARACTERISTICS (@ V Parameter Symbol Offset Voltage Average Offset Voltage Drift Offset Current Average Offset Current Drift Bias Current Current Gain Collector-Base Leakage Current Collector-Emitter Leakage Current Collector-Collector Leakage Current VOS CB 0.4 0.23 µV rms 0.60 8.5 pF = 15 V, IC = 10 A, –55ⴗC ≤ TA ≤ +125ⴗC, unless otherwise noted.) Conditions Min MAT01AH Typ Max Min MAT01GH Typ Min Units 0.06 0.15 0.14 0.70 mV TCVOS IOS (Note 6) 0.15 0.9 0.50 8.0 0.35 1.5 1.8 15.0 µV/°C nA TCIOS ΙΒ hFE ICBO (Note 7) 10 28 400 90 60 15 36 300 150 130 pA/°C nA 15 80 25 200 nA 50 300 90 400 nA 30 200 50 400 nA ICES ICC 167 TA = 125°C, VCB = 30 V, IE = 04 TA = 125°C, VCE = 30 V, VBE = 04, 6 TA = 125°C, VCC = 30 V, (Note 6) –2– 77 REV. A MAT01 TYPICAL ELECTRICAL CHARACTERISTICS (@ V Parameter Symbol Average Offset Voltage Drift Average Offset Current Drift Collector-Emitter-Leakage Current Collector-Base-Leakage Current Gain Bandwidth Product Offset Voltage Stability TCVOS TCIOS CB = 15 V and IC = 10 A, TA = +25ⴗC, unless otherwise noted.) Conditions MAT01N Typical Units µV/°C pA/°C 0.35 15 ICES VCE = 30 V, VBE = 0 90 ICBO fT ∆VOS/T VCB = 30 V, IE = 0 VCE = 10 V, IC = 10 mA First Month (Note 1) Long-Term (Note 2) 25 450 2.0 0.2 pA pA MHz µV/Mo µV/Mo NOTES 1 Exclude first hour of operation to allow for stabilization. 2 Parameter describes long-term average drift after first month of operation. 3 Sample tested. 4 The collector-base (I CBO) and collector-emitter (I CES) leakage currents may be reduced by a factor of two to ten times by connecting the substrate (package) to a potential which is lower than either collector voltage. 5 ICC and ICES are guaranteed by measurement of I CBO. V OS for VOS Ⰶ VBE) T = 298 °K for TA = 25°C. T 6 Guaranteed by V OS test (TCVOS ≅ 7 Guaranteed by I OS test limits over temperature. Specifications subject to change without notice. WAFER TEST LIMITS (@ V CB = 15 V, IC = 10 A, TA = +25ⴗC, unless otherwise noted.) Parameter Symbol Conditions Breakdown Voltage Offset Voltage Offset Current Bias Current Current Gain Current Gain Match Offset Voltage Change Offset Current Change Collector Saturation Voltage BVCEO VOS IOS IB hFE ∆hFE ∆VOS/∆VCB ∆VOS/∆VCB VCE (SAT) IC = 100 µA 0 ≤ VCB ≤ 30 V 0 ≤ VCB ≤ 30 V IB = 0.1 mA, IC = 1 mA MAT01N Limits 45 0.5 3.2 40 250 8.0 8.0 70 0.25 Units V min mV max nA max nA max min % max µV/V max pA/V max V max NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. REV. A –3– MAT01 ABSOLUTE MAXIMUM RATINGS 1 Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . +300°C DICE Junction Temperature . . . . . . . . . . . . –65°C to +150°C Collector-Base Voltage (BVCBO) MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V Collector-Emitter Voltage (BVCEO) MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V Collector-Collector Voltage (BVCC) MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V Emitter-Emitter Voltage (BVEE) MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V Emitter-Base Voltage (BVEBO)2 . . . . . . . . . . . . . . . . . . . . . 5 V Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA Total Power Dissipation Case Temperature ≤ 40°C3 . . . . . . . . . . . . . . . . . . . . 1.8 W Ambient Temperature ≤ 70°C4 . . . . . . . . . . . . . . . 500 mW Operating Ambient Temperature . . . . . . . . . –55°C to +125°C Operating Junction Temperature . . . . . . . . . –55°C to +150°C NOTES 1 Absolute maximum ratings apply to both DICE and packaged devices. 2 Application of reverse bias voltages in excess of rating shown can result in degradation of hFE and hFE matching characteristics. Do not attempt to measure BVEBO greater than the 5 V rating shown. 3 Rating applies to applications using heat sinking to control case temperature. Derate linearity at 16.4 mW/°C for case temperatures above 40°C. 4 Rating applies to applications not using heat sinking; device in free air only. Derate linearity at 6.3 mW/°C for ambient temperatures above 70°C. ORDERING GUIDE1 Model VOS max (TA = +25ⴗC) Temperature Range Package Option MAT01AH2 MAT01GH 0.1 mV 0.5 mV –55°C to +125°C –55°C to +125°C TO-78 TO-78 NOTES 1 Burn-in is available on commercial and industrial temperature range parts in TO-can packages. 2 For devices processed in total compliance to MIL-STD-883, add/883 after part number. Consult factory for 883 data sheet. DICE CHARACTERISTICS 1. 2. 3. 5. 6. 7. COLLECTOR (1) BASE (1) EMITTER (1) EMITTER (2) BASE (2) COLLECTOR (2) DIE SIZE 0.035 × 0.025 inch, 875 sq. mils (0.89 × 0.64 mm, 0.58 sq. mm) CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the MAT01 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– WARNING! ESD SENSITIVE DEVICE REV. A MAT01 Figure 1. Offset Voltage vs. Temperature Figure 2. Current Gain vs. Collector Current Figure 3. Noise Voltage REV. A Figure 4. Offset Voltage vs. Time Figure 5. Current Gain vs. Temperature Figure 6. Noise Current Density –5– Figure 7. Base-Emitter Voltage vs. Collector Current Figure 8. Saturation Voltage vs. Collector Current Figure 9. Gain-Bandwidth vs. Collector Current MAT01 MAT01 TEST CIRCUITS Figure 10. MAT01 Matching Measurement Circuit Figure 11. MAT01 Noise Measurement Circuit –6– REV. A MAT01 APPLICATION NOTES Application of reverse bias voltages to the emitter-base junctions in excess of ratings (5 V) may result in degradation of hFE and hFE matching characteristics. Circuit designs should be checked to ensure that reverse bias voltages above 5 V cannot be applied during such transient conditions as at circuit turn-on and turn-off. Stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can prevent realization of the predicted drift performance. Both input terminals should be maintained at the same temperature, preferably close to the temperature of the device’s package. TYPICAL APPLICATIONS Figure 12. Precision Reference Figure 14. Precision Operational Amplifiers Figure 13. Basic Digital Thermometer Readout in Degrees Kelvin (°K) REV. A Figure 15. Digital Thermometer with Readout in °C –7– MAT01 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). H-06A 6-Lead Metal Can (TO-78) 0.185 (4.70) 0.165 (4.19) 3127–0–6/97 REFERENCE PLANE 0.750 (19.05) 0.500 (12.70) 0.250 (6.35) MIN 0.100 (2.54) BSC 0.160 (4.06) 0.110 (2.79) 0.050 (1.27) MAX 0.335 (8.51) 0.305 (7.75) 0.370 (9.40) 0.335 (8.51) 4 5 0.200 (5.08) BSC 0.021 (0.53) 0.016 (0.41) 1 0.034 (0.86) 0.027 (0.69) 45° BSC BASE & SEATING PLANE PRINTED IN U.S.A. 0.045 (1.14) 0.010 (0.25) 0.045 (1.14) 0.027 (0.69) 2 0.100 (2.54) BSC 0.019 (0.48) 0.016 (0.41) 0.040 (1.02) MAX 6 3 –8– REV. A