PD - 20506 HFA50HF20 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 200V CATHODE Features • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 0.96V Qrr = 390nC di(rec)M/dt = 900A/µs ANODE ANODE Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. SMD -1 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current Single Pulse Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 100 600 125 -55 to +150 V A W °C Thermal - Mechanical Characteristics Parameter RθJC Wt Junction-to-Case, Single Leg Conducting Weight Typ. Max. Units — 2.6 1.0 — °C/W g Note: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 9/18/98 HFA50HF20 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage IRM Max Reverse Leakage Current CT LS Junction Capacitance Series Inductance Min. Typ. Max. Units 200 — — — — — — — — — — — — — 170 2.8 — 0.96 1.11 0.84 10 1.0 253 — V V µA mA pF nH Test Conditions IR = 100µA IF = 50A IF = 100A See Fig. 1 IF = 50A, TJ = 125°C VR = VR Rated See SeeFig. Fig.22 TJ = 125°C, VR = 160V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. Typ. Max. Units — — — — — — — — 62 93 ns 98 150 10 15 A 14 21 A 260 390 nC 640 960 nC 600 900 A/µs 980 1500 A/µs Test Conditions T J = 25°C TJ = 125°C T J = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C See Fig. 5 IF = 50A See Fig. 6 VR = 200V See Fig. 7 dif/dt = 200A/µs See Fig. 8 Case Outline and Dimensions — SMD-1 Lead Assignments : 2 - Common Cathode 1, 3 - Anode IR Case Style SMD-1 Dimensions in millimeters and (inches) 2 www.irf.com HFA50HF20 1000 TJ = 150°C 100 TJ = 125°C TJ = TJ = 150°C 100 T J = 125°C 10 TJ = 100°C 1 TJ = 75°C 0.1 TJ = 50°C 0.01 TJ = 25°C A 0.001 25°C 0 40 80 120 160 200 Reverse Voltage - VR ( V ) Fig. 2 - Typical Reverse Current vs. Reverse Voltage A 10 10000 1 0.0 0.4 0.8 1.2 Forward Voltage Drop - V 1.6 2.0 F M(V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Junction Capacitance - CT (pF) Instantaneous Forward Current - I (A) F Reverse Current - IR (µA) 1000 T J = 25°C 1000 A 100 1 10 100 1000 Reverse Voltage - VR ( V ) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ( K/W ) Thermal Impedance - Z thJC thJC (K/W) 10 1 D D D D 0.1 = = = = 0.50 0.33 0.25 0.17 PD M D = 0.08 t 1 t2 N o te s : 1 . D u ty fa c to r D = t / t 1 2 0.01 0.001 0.00001 Single Pulse (Thermal Resistance) 0.0001 2. Peak T = P xZ + T J DM thJC C 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA50HF20 100 110 V R = 200V T J = 125°C T J = 25°C I F = 100A 100 I F = 50A I F = 25A I F = 100A I I R R M - (A) t rr - (ns) 90 I F = 50A 80 I F = 25A 10 70 60 V R = 200V T J = 125°C T J = 25°C A 50 100 di f /dt - (A/µs) A 1 100 1000 1000 di f /dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. dif/dt, Fig. 6 - Typical Recovery Current vs. dif/dt, 10000 3000 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125°C T J = 25°C I F = 25A I F = 50A I F = 100A di(rec)M/dt - (A/µs) Q rr - (nC) 2000 I F = 50A I F = 25A 1000 0 100 1000 A di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 I F = 100A 100 100 1000 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt www.irf.com HFA50HF20 3 t rr IF R E V E R S E R E C O V E R Y C IR C U IT tb ta 0 Q rr V R = 2 00 V 2 I RRM 4 0.5 I R R M di(rec)M /dt 0.01 Ω 0.75 I R R M L = 70µH D .U .T. D d if/d t A D JU S T G 5 IR F P 2 50 S Fig. 9 - Reverse Recovery Parameter Test Circuit 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 www.irf.com 5