ETC IRG4BAC50U

PD -93770
PROVISIONAL
IRG4BAC50U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry Super-220™ (TO-273AA) package
VCES = 600V
VCE(on) typ. = 1.65V
G
@VGE = 15V, IC = 27A
E
N-channel
Benefits
• Generation 4 IGBT offers highest efficiency available
• Optimized for specified application conditions
Super-220™
(TO-273AA)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
TBD
0.64
–––
40
–––
Units
°C/W
g (oz)
1
1/19/2000
IRG4BAC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage „ 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
–––
VCE(ON)
Collector-to-Emitter Saturation Voltage
–––
–––
VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
–––
gfe
Forward Transconductance …
16
–––
ICES
Zero Gate Voltage Collector Current
–––
–––
IGES
Gate-to-Emitter Leakage Current
–––
V(BR)CES
V(BR)ECS
Typ.
–––
–––
0.60
1.65
2.0
1.6
–––
-13
24
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
–––
V
VGE = 0V, IC = 1.0A
––– V/°C VGE = 0V, IC = 1.0mA
2.0
IC = 27A
VGE = 15V
–––
IC = 55A
See Fig.2, 5
V
–––
IC = 27A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 250µA
–––
S
VCE ³ 15V, IC = 27A
250
V
GE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
5000
VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LC
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
180
25
61
32
20
170
88
0.12
0.54
0.66
31
23
230
120
1.6
2.0
5.0
4000
250
52
Max. Units
Conditions
270
IC = 27A
38
nC VCC = 400V
See Fig. 8
90
VGE = 15V
–––
–––
TJ = 25°C
ns
260
IC = 27A, VCC = 480V
130
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 10, 11, 13, 14
0.9
–––
TJ = 150°C,
–––
IC = 27A, VCC = 480V
ns
–––
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 13, 14
–––
nH Measured 5mm from package
–––
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BAC50U
80
F o r b o th :
60
L oad C urre nt (A )
T rian gu la r w a ve:
D u t y c yc le: 5 0%
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d r ive a s sp ec ified
P o w e r D is sip atio n = 40 W
C la m p vo lta g e :
8 0 % o f ra te d
S q u are w a ve :
40
6 0 % o f ra ted
vo ltag e
20
Idea l d io des
A
0
0.1
1
10
100
f, F re qu e nc y (k H z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
I C , C ollec to r-to-Em itte r C u rre nt (A)
I C , C o lle ctor-to-E m itter Cu rre n t (A )
1000
100
T J = 1 5 0 °C
10
T J = 2 5 °C
1
VGE = 15V
2 0 µ s P U L S E W ID T H
0.1
0
1
A
10
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
Fig. 2 - Typical Output Characteristics
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100
TJ = 1 5 0°C
T J = 2 5 °C
10
V C C = 10 V
5 µs P U L S E W IDTH A
1
4
6
8
10
12
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 3 - Typical Transfer Characteristics
3
IRG4BAC50U
2.5
V G E = 15 V
V CE , C olle ctor-to-E m itte r V oltage (V)
M aximum D C Collector Current (A )
60
50
40
30
20
10
0
25
50
75
100
125
V G E = 1 5V
8 0 µs P U L S E W ID TH
IC = 5 4 A
2.0
IC = 2 7 A
1.5
IC = 14 A
A
1.0
150
-60
T C , C ase Tem perature (°C)
-40
-20
0
20
40
60
80
100 120
140 160
T J , Ju n c tio n Te m p e ra tu re (°C )
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
T h e rm a l R e s p o n se (Z thJ C )
1
D = 0 .5 0
0 .2 0
0 .1
0 .1 0
PD M
0 .0 5
t
0 .0 2
t2
N ote s :
1 . D u ty f ac t or D = t
0 .0 1
0 .0 1
0 .0 0 0 0 1
1
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
1
/t
2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BAC50U
V GE
C ie s
C re s
C o es
6000
=
=
=
=
20
0V ,
f = 1M Hz
C ge + C gc , C ce SH OR T ED
C gc
C ce + C gc
V G E , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
8000
C ie s
4000
C oe s
2000
C res
16
12
A
0
1
10
VC E = 400V
I C = 27A
8
4
A
0
0
100
40
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
2.0
160
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 27A
To ta l S w itc h in g L os se s (m J)
VC C
VG E
TJ
IC
120
Q g , Total Gate Charge (nC)
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
2.2
80
1.8
1.6
1.4
1.2
1.0
R G = 5 .0 Ω
V GE = 15V
V CC = 480V
IC = 5 4 A
IC = 2 7A
1
IC = 1 4 A
0.8
A
0.6
0
10
20
30
40
50
60
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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A
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BAC50U
RG
TJ
V CC
V GE
1000
= 55.0Ω
.0Ω
= 1 5 0 °C
= 480V
= 15V
I C , C ollector-to-E m itter Current (A )
Total Switc hing Losses (mJ )
3.0
2.0
1.0
A
0.0
0
10
20
30
40
50
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGGE E= 2 0V
T J = 125 °C
S A FE O P E R A T IN G A R E A
100
10
1
1
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
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IRG4BAC50U
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X [email protected]°C
480µF
960V

‚
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V

‚
ƒ

‚
9 0%
1 0%
ƒ
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4BAC50U
Super-220™ (TO-273AA) Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
8
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