DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1, STM-4, ITU-T recommendations. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 12 mA • High speed tr, tf = 0.5 ns MAX. • SMSR 45 dB • Wide operating temperature range TC = −10 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm NX6504G Series • Based on Telcordia reliability The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PL10069EJ02V0DS (2nd edition) Date Published November 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 2002 NX6504 Series PACKAGE DIMENSIONS (UNIT: mm) NX6504S Series 5.6 +0.00 –0.03 4.2±0.1 3.55±0.05 BOTTOM VIEW 1.0±0.1 1 110˚±2˚ 0.3 +0.1 –0.0 2 3 PIN CONNECTIONS 0.3 +0.1 –0.0 *1 0.33 0.25 1.0 MIN. 0.25±0.03 (GLASS) NX6504SH 1.6±0.1 NX6504SI 1 (CASE) 1 (CASE) LD LD 4 2 REFERENCE PLANE 4 2 PD LD CHIP 1.27±0.05 15.0±1.0 1.2±0.1 2.1±0.15 4 PD 3 3 NX6504SJ NX6504SK 1 (CASE) 4– 0.45 1 (CASE) LD LD 4 2 2 2.0 P.C.D 4 PD PD 3 *1 n = 1.48 Bolosilicate Glass 3 NX6504G Series 5.6 +0.00 –0.03 4.3±0.1 3.75±0.05 BOTTOM VIEW 1 1.0±0.1 2 3 0.3+0.1 –0.0 110˚±2˚ 4 PIN CONNECTIONS 0.3 +0.1 –0.0 NX6504GH 15.0±1.0 1.2±0.1 3.97±0.1 8.6±1.0 Focal Point NX6504GI 1 (CASE) 1 (CASE) LD LD 4 2 4 2 PD PD 3 3 NX6504GJ NX6504GK 1 (CASE) 1 (CASE) LD LD 4– 0.45 4 2 2 2.0 P.C.D 2 4 PD 3 Data Sheet PL10069EJ02V0DS PD 3 NX6504 Series ORDERING INFORMATION NX6504S Series Part Number NX6504SH Package Pin Connections 1 4-pin CAN with flat glass cap LD 4 2 PD 3 1 NX6504SI LD 4 2 PD 3 1 NX6504SJ LD 4 2 PD 3 1 NX6504SK LD 2 4 PD 3 NX6504G Series Part Number NX6504GH Package Pin Connections 1 4-pin CAN with aspherical lens cap LD 4 2 PD 3 1 NX6504GI LD 4 2 PD 3 1 NX6504GJ LD 4 2 PD 3 1 NX6504GK LD 2 4 PD 3 Data Sheet PL10069EJ02V0DS 3 NX6504 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 10 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC −10 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°°C, unless otherwise specified) Parameter Symbol Operating Voltage Vop Threshold Current Ith Conditions MIN. Po = 5.0 mW, TC = −10 to +85°C TC = 85°C Threshold Output Power Pth Differential Efficiency ηd Temperature Dependence of Differential Efficiency ∆ηd Peak Emission Wavelength λp Side Mode Suppression Ratio SMSR TYP. MAX. Unit 1.0 1.5 V 12 25 mA 35 50 TC = −10 to +85°C, IF = Ith ∆ηd = 10 log ηd (@ 85°C) 200 µW 0.15 0.25 W/A −3.0 −1.5 dB ηd (@ 25°C) Po = 5.0 mW, RMS (−20 dB) TC = −10 to +85°C Po = 5.0 mW, TC = −10 to +85°C 1 530 30 1 570 45 nm dB θ⊥ Po = 5.0 mW, FAHM *2 Lateral Beam Angle θ// Po = 5.0 mW, FAHM *2 Rise Time tr 10-90% 0.05 0.5 ns Fall Time tf 90-10% 0.2 0.5 ns Monitor Current Im VR = 5 V, Po = 5.0 mW 600 1 000 µA Monitor Dark Current ID VR = 5 V 0.1 10 nA *1 Vertical Beam Angle *1 200 30 40 deg. 25 35 deg. VR = 5 V, TC = −10 to +85°C Monitor PD Terminal Capacitance *3 Tracking Error Ct VR = 5 V, f = 1 MHz γ Im = const. (@ Po = 5.0 mW, TC = 25°C) TC = −10 to +85°C *1 Applicable to only NX6504S Series *2 FAHM: Full Angle at Half Maximum 4 Data Sheet PL10069EJ02V0DS 500 6 −1.0 20 pF 1.0 dB NX6504 Series *3 Tracking Error: γ Po γ = 10 log (mW) Po 5.0 [dB] TC = 25˚C 5.0 TC = –10 to +85˚C Po 0 Im Im (mA) Data Sheet PL10069EJ02V0DS 5 NX6504 Series TYPICAL CHARACTERISTICS (TC = −10 to +85°°C) 5˚C 100 Operating Current Iop (mA), Threshold Current Ith (mA) +8 +25 10˚ C =– OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE TC Optical Output Power Po (mW) 10 ˚C OPTICAL OUTPUT POWER vs. FORWARD CURRENT 7.5 5.0 2.5 20 0 40 60 80 100 Iop@Po = 5.0 mW 1 –40 TEMPERATURE DEPENDENCE OF PEAK EMISSION WAVELENGTH Peak Emission Wavelength λp (nm) 1 560 1 555 1 550 1 545 –20 0 20 40 60 80 100 Case Temperature TC (˚C) Remark The graphs indicate nominal characteristics. 6 –20 0 20 40 60 Case Temperature TC (˚C) Forward Current IF (mA) 1 540 –40 Ith 10 Data Sheet PL10069EJ02V0DS 80 100 NX6504 Series TYPICAL CHARACTERISTICS (TC = 25°°C) FAR FIELD PATTERN (θ //) (NX6504S SERIES ONLY) FAR FIELD PATTERN (θ ⊥) (NX6504S SERIES ONLY) 100 Intensity (%) Intensity (%) 100 50 0 –60 0 0 –60 60 Vertical Beam Angle θ ⊥ (deg.) SPECTRUM FORWARD CURRENT vs. FORWARD VOLTAGE Forward Current IF (mA) 50 –30 Relative Intensity 60 0 Lateral Beam Angle θ // (deg.) –10 –50 –70 –90 1 530.8 50 1 555.8 1 580.8 40 30 20 10 0 Wavelength λ (nm) 0.5 1.0 1.5 2.0 2.5 Forward Voltage VF (V) Remark The graphs indicate nominal characteristics. Data Sheet PL10069EJ02V0DS 7 NX6504 Series LD CAN PACKAGES FAMILY FOR OPTICAL FIBER COMMUNICATIONS Absolute Maximum Ratings Electro-Optical Characteristics @TC = 25°C @TC Part Number TC (°C) NX5302 Series −40 to +85 Tstg (°C) −40 to +85 λ (nm) Ith (mA) Po (mW) TYP. TYP. MIN. MAX. 10 5 1 263 1 360 Application 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1) Package CAN 622 Mb/s: STM-4 (I-4, S-4.1) NX5306 Series −40 to +85 −40 to +85 10 5 1 263 1 360 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1) CAN 622 Mb/s: STM-4 (I-4, S-4.1) NX5307 Series −40 to +85 −40 to +85 10 10 1 266 1 360 2.5 Gb/s: STM-16 CAN NX6301 Series −40 to +85 −40 to +85 13 5 1 280 1 335 156 Mb/s: STM-1 CAN 622 Mb/s: STM-4 NX6504 Series −10 to +85 −40 to +85 12 5 1 530 1 570 156 Mb/s: STM-1 622 Mb/s: STM-4 8 Data Sheet PL10069EJ02V0DS CAN NX6504 Series REFERENCE Document Name Document No. OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE PX10161E Opto-Electronics Devices Pamphlet PX10160E NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices *1 C11159E *1 C11531E SEMICONDUCTOR SELECTION GUIDE −Products and Packages− *1 X13769E *1 Published by NEC Corporation Data Sheet PL10069EJ02V0DS 9 NX6504 Series • The information in this document is current as of November 2002. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PL10069EJ02V0DS NX6504 Series SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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