ALPHA AO4482

AO4482
100V N-Channel MOSFET
General Description
Product Summary
The AO4482 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
100V
6A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 37mΩ
RDS(ON) (at VGS = 4.5V)
< 42mΩ
100% UIS Tested
100% Rg Tested
SO8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
6
ID
TA=70°C
Maximum
100
5
A
IDM
42
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
61
mJ
Pulsed Drain Current
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 3 : Dec 2010
3.1
PD
TA=70°C
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
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Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Max
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
42
TJ=55°C
µA
5
VDS=0V, VGS= ±20V
100
VGS=10V, ID=6A
2.1
2.7
30
37
60
72
VGS=4.5V, ID=5A
33
42
VDS=5V, ID=6A
35
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
nA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
1
V
4
A
pF
1300
1630
2000
70
100
130
pF
30
50
70
pF
0.3
0.75
1.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
28
36
44
nC
Qg(4.5V) Total Gate Charge
14
18
22
nC
4
5
6
nC
9
13
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=6A
5
VGS=10V, VDS=50V, RL=8.3Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=500A/µs
IF=6A, dI/dt=500A/µs
7
ns
7
ns
28
ns
7
ns
17.5
25
33
90
130
170
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3 : Dec 2010
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
4V
10V
VDS=5V
7V
30
30
ID(A)
ID (A)
3.5V
20
10
20
125°C
10
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
2
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
40
4
5
Normalized On-Resistance
2.8
36
VGS=4.5V
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
32
28
VGS=10V
24
2.4
VGS=10V
ID=6A
2
17
5
2
VGS=4.5V10
1.6
1.2
ID=5A
0.8
20
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
80
1.0E+02
ID=6A
1.0E+01
70
40
50
IS (A)
RDS(ON) (mΩ )
1.0E+00
60
125°C
125°C
1.0E-01
1.0E-02
40
25°C
1.0E-03
30
1.0E-04
25°C
1.0E-05
20
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3 : Dec 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=50V
ID=6A
2400
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1800
1200
Coss
0
0
0
5
100
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
40
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100.0
TA=25°C
TA=100°C
10µs
10.0
TA=125°C
TA=150°C
10
ID (Amps)
IAR (A) Peak Avalanche Current
Crss
600
RDS(ON)
limited
100µs
1.0
1ms
DC
0.1
1
10ms
TJ(Max)=150°C
TA=25°C
10s
0.0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.01
0.1
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
1000
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 3 : Dec 2010
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3 : Dec 2010
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 3 : Dec 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6