General Description Features Repetitive Reverse Voltage : VRRM= 400V Low Forward Voltage : VF(typ.) = 1.0V Average Forward Current : IF(Av.)=100A @TC=100℃ Ultra-Fast Reverse Recovery Time : trr(typ.) = 35ns Extensive Characterization of Recovery Parameters Reduced EMI and RFI Non Isolation Type Package 175℃ Operating Junction Temperature Dual FRD Construction 400V FRD Module Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply 3DM-2NI (Common Heat Sink) Absolute Maximum Ratings @Tc = 25oC (Per Leg) Characteristics Conditions Symbol Rating Unit Repetitive Peak Reverse Voltage VRRM 400 V Reverse DC Voltage VR(DC) 320 V 200 A 100 A IFSM 2000 A I2t 16.7* 103 A2s Junction Temperature TJ -40 ~ 175 ℃ Maximum Power Dissipation PD 480 W Storage Temperature Tstg -40 ~ 150 ℃ Mounting Torque(M6) - 4.0 N.m - 3.0 N.m - 95 g TC=25oC Average Forward Current Surge(non-repetitive) Forward I2t for Fusing Terminal Torque(M6) TC=100oC Current Resistive Load Typical Including Screws Weight Mar. 2013. Version 2.1 IF(AV) One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj= 25℃ Start 1 0755-82926486 MPJC2CA100U40 MPJC2CA100U40 400V FRD Module MagnaChip Semiconductor Ltd. @Tc = 25oC(unless otherwise specified) Characteristics Conditions Cathode Anode Breakdown Voltage IR=100uA Diode Maximum Forward Voltage IF=100A Symbol Min. Typ. Max. Unit VR 400 - - V - 1.0 1.3 - 0.9 - TC=25℃ VFM Diode Peak Reverse Recovery Current Diode Reverse Recovery Time Diode Reverse Recovery Time Tc=100℃, VRRM applied IF =1A,VR=30V di/dt = -200A/uS IF =100A,VR=200V di/dt = -200A/uS V TC=100℃ IRRM - - 1.0 mA TC=25℃ trr - 35 50 ns - 60 - - 90 - Symbol Min. Typ. Max. Unit Rth(j-c) - - 0.31 ℃/W TC=25℃ trr TC=100℃ ns Thermal Characteristics Characteristics Thermal Resistance(Non-Isolation Type) Mar. 2013. Version 2.1 Conditions Junction to Case 2 0755-82926486 MagnaChip Semiconductor Ltd. 400V FRD Module TC=100℃ MPJC2CA100U40 Electrical Characteristics Reverse Recovery Time[ns] 200 150 100 50 75 50 25 0 0 0.0 0.5 1.0 200 1.5 400 Forward Voltage Drop,VF[V] Fig.1 Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig.2 Typical Reverse Recovery Time Vs. –di/dt 250 Average Forward Current,I F(AVG)[A] 1 Thermal Response Zthjc[ ℃/W] 600 di/dt[A/us] 0.1 0.01 1E-3 1E-4 1E-5 TC=25℃ 1E-4 1E-3 0.01 0.1 1 150 DC 100 50 0 10 0 Rectangular Pulse Duration Time[sec] 20 40 60 80 100 120 140 Case Temperatute, Tc[℃] Fig.3 Transient Thermal Impedance(Zthjc) Characteristics Mar. 2013. Version 2.1 200 Fig.4 Forward Current Derating Curve 3 0755-82926486 MagnaChip Semiconductor Ltd. 160 400V FRD Module Forward Current,I F[A] 100 TC=25℃ TC=125℃ 250 MPJC2CA100U40 300 3DM-2NI Dimensions are in millimeters, unless otherwise specified MPJC2CA100U40 Package Dimension 400V FRD Module Mar. 2013. Version 2.1 4 0755-82926486 MagnaChip Semiconductor Ltd. MPJC2CA100U40 400V FRD Module DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2013. Version 2.1 5 0755-82926486 MagnaChip Semiconductor Ltd.