AO4882 40V Dual N-Channel MOSFET General Description The AO4882 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. Features VDS ID (at VGS=10V) 40V 8A RDS(ON) (at VGS=10V) < 19mΩ RDS(ON) (at VGS=4.5V) < 27mΩ D1 D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 6 A IDM 40 Avalanche Current C IAS 15 A Avalanche energy L=0.1mH C TA=25°C Power Dissipation B TA=70°C EAS 11 mJ Junction and Storage Temperature Range TJ, TSTG Pulsed Drain Current Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Maximum 40 8 ID TA=70°C S2 2 PD Symbol t ≤ 10s Steady-State Steady-State W 1.3 RθJA RθJL -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W www.freescale.net.cn AO4882 40V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C 5 ±100 nA 2.4 V 15.4 19 22.5 29 VGS=4.5V, ID=4A 21 27 mΩ 1 V 2.5 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=8A 33 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.9 VGS=10V, ID=8A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz S 415 pF 112 pF 11 VGS=0V, VDS=0V, f=1MHz pF Ω 2.2 3.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6.5 12 nC Qg(4.5V) Total Gate Charge 3 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=8A VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω 1 mΩ 1.2 nC 1.1 nC 4 ns 3 ns 15 ns tf Turn-Off Fall Time 2 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 12.5 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 3.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO4882 40V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VDS=5V 4.5V 25 15 3.5V ID(A) ID (A) 20 15 10 3V 125°C 10 5 25°C 5 VGS=2.5V 0 0 0 1 2 3 4 0 5 50 2 3 4 5 6 Normalized On-Resistance 1.8 40 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 VGS=4.5V 20 10 VGS=10V 0 1.6 VGS=10V ID=8A 1.4 17 5 2 VGS=4.5V10 1.2 ID=4A 1 0.8 0 3 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 60 1.0E+02 ID=8A 1.0E+01 50 40 1.0E+00 125°C 30 20 125°C 1.0E-01 1.0E-02 1.0E-03 10 25°C 25°C 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 IS (A) RDS(ON) (mΩ Ω) 40 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4882 40V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=20V ID=8A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 400 300 200 Coss 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 10000 100.0 1.0 10µs 1000 100µ Power (W) TA=25°C RDS(ON) limited 10.0 ID (Amps) Ciss 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10s 100 10 DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO4882 40V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn