AMS236/336 FEATURES APPLICATIONS • Low Temperature Coefficient • Wide Operating Current Range • Guaranteed Temperature Stability • Max. 0.6Ω Dynamic Impedance (A grade) • ±1% Initial Tolerance Available • Power Supplies • Instrumentation • 8 Bit A/D, D/A Reference • Current Loop Measurement and Control Systems • Reference for 5V Systems GENERAL DESCRIPTION The AMS236/AMS336 are precision band-gap voltage reference diodes. These voltage reference features a very low dynamic impedance and good temperature coefficient, operating over a wide current range of 400µA to 10mA. On-chip trimming is used to provide tight tolerance and minimize temperature drift. A third terminal allows the reference voltage to be trimmed ±5%. The AMS236/AMS336 are used as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry, and the 2.5V make it easy to obtain a stable reference from 5V logic supplies. The AMS236 is rated for operation over -25°C to +85°C while the AMS336 is rated over a 0°C to 70°C temperature range. The AMS236/AMS336 are available in TO-92 and SO-8 packages. ORDERING INFORMATION: TOL. ±25mV ±50mV ±50mV ±100mV PACKAGE TYPE TO-92 AMS236AN AMS236BN AMS336AN AMS336BN OPERATING 8 LEAD SOIC AMS236AS AMS236BS AMS336AS AMS336BS TEMPERATURE RANGE -25°C to +85°C -25°C to +85°C 0°C to 70°C 0°C to 70°C PIN CONNECTIONS TO-92 Plastic Package (N) 3 2 8L SOIC SO Package (S) + 8 1 1 N/C N/C ADJ 7 6 5 2 3 N/C N/C N/C Bottom View Top View 1 Advanced Monolithic Systems http://www.ams-semitech.com 4 - AMS236/336 ABSOLUTE MAXIMUM RATINGS (Note 1) Reverse Current Forward Current Operating Temperature Range AMS236 AMS336 15mA 10mA Storage temperature Soldering information (25 sec) -55°C to +150°C 265°C -25°C to +85°C 0°C to +70°C ELECTRICAL CHARACTERISTICS Electrical Characteristics at IR = 1 mA, and TA = +25°C unless otherwise specified. Parameter Conditions Reverse Breakdown Voltage Reverse Dynamic Impedance AMS236A Typ Max Min 2.475 Min 2.500 2.525 0.2 0.4 f = 100Hz AMS236B Typ Max 2.500 2.550 V 0.6 0.2 0.6 Ω 1 0.4 1 2.6 6 2.6 6 3 10 3 10 9 3.5 9 Reverse Breakdown Voltage Change with current 400µA ≤IR ≤10mA Temperature Stability -25°C ≤ TA ≤ +85°C 3.5 Long Term Stability (Note 4) TA=25°C±0.1°C T = 1000 Hr 20 2.450 Units 20 mV mV ppm ELECTRICAL CHARACTERISTICS Electrical Characteristics at IR = 1 mA, and TA = +25°C unless otherwise specified. Parameter Conditions Reverse Breakdown Voltage Reverse Dynamic Impedance AMS336A Typ Max Min 2.450 Min 2.500 2.550 f = 100Hz AMS336B Typ Max 2.400 2.500 2.600 V Ω 0.2 1.0 0.2 1.0 0.4 1.4 0.4 1.4 2.6 10 2.6 10 3 12 3 12 6 1.8 6 Reverse Breakdown Voltage Change with current 400µA ≤IR ≤10mA Temperature Stability 0°C ≤ TA ≤ 70°C 1.8 Long Term Stability (Note 4) TA=25°C±0.1°C T = 1000 Hr 20 Units 20 mV mV ppm Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: For elevated temperature operation, Tj max is: AMS236 +125°C AMS336 +100°C Thermal Resistance ϕ JA (junction to ambient) TO-92 170°C/W (0.125” leads) SO-8 165°C/W Note 3: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at TA = TJ = 25°C. Note 4: Temperature stability for the AMS236/336 family is guaranteed by design. Design limits are guaranteed (but not 100% production tested) over the specified temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating TMAX and TMIN, divided by TMAX - TMIN. 2 Advanced Monolithic Systems http://www.ams-semitech.com AMS236/336 TYPICAL PERFORMANCE CHARACTERISTICS Reverse Characteristics Reverse Voltage Change 10 -3 TJ = +25° C 10 -4 10 TJ = +85° C TJ = -25° C -5 0.5 1.8 2.2 1.0 1.4 REVERSE VOLTAGE (V) Response Time 3.5 2.5 3.0 VOLTAGE SWING (V) 10 -2 REVERSE VOLTAGE CHANGE (mV) REVERSE CURRENT (µA) 10 -1 2.5 2.0 1.5 1.0 0.5 0 2.6 OUTPUT 2.0 2.5k 1.0 INPUT 0 OUTPUT ~ ~ ~ ~ 6 INPUT 0 0 2 6 8 4 REVERSE CURRENT (mA) 0 10 2 4 TIME (µs) 6 TYPICAL APPLICATIONS 2.5V Reference Wide Input Range Reference 2.5V Reference with Minimum Temperature Coefficient 5V VIN 3.5 TO 40V 10V 2.5k 2.5k 68 1N914* 2.5V VOUT = 2.5V 10k† AMS336 AMS336 AMS336 1N914* † Adjust to 2.50V * Any silicon signal diode Precision Power Regulator with Low Temperature Coefficient VIN AMS1085 IN OUT ADJ Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage 10V VOUT 1.2k 5k 1N457 AMS336 R1 375 AMS336 10k* 1N457 10k* TRIM R2 2k OUTPUT ADJUST *Does not affect Temperature Coefficient 3 Advanced Monolithic Systems http://www.ams-semitech.com 8 AMS236/336 PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted. 3 LEAD TO-92 PLASTIC PACKAGE (N) 0.180±0.005 (4.572±0.127) 0.060±0.005 (1.524±0.127) DIA 0.060±0.010 (1.524±0.254) 0.90 (2.286) NOM 0.180±0.005 (4.572±0.127) 0.140±0.010 (3.556±0.127) 5° NOM 0.500 (12.70) MIN 0.050 (1.270) MAX UNCONTROLLED LEAD DIMENSIONS 0.015±0.002 (0.381±0.051) 0.016±0.003 (0.406±0.076) 0.050±0.005 (1.270±0.127) 10° NOM N (TO-92 ) AMS DRW# 042391 8 LEAD SOIC PLASTIC PACKAGE (S) 0.189-0.197* (4.801-5.004) 8 7 6 5 0.228-0.244 (5.791-6.197) 0.150-0.157** (3.810-3.988) 1 2 3 4 0.010-0.020 x 45° (0.254-0.508) 0.053-0.069 (1.346-1.752) 0.004-0.010 (0.101-0.254) 0.014-0.019 (0.355-0.483) 0.008-0.010 (0.203-0.254) 0.050 (1.270) TYP 0°-8° TYP 0.016-0.050 (0.406-1.270) *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE 4 Advanced Monolithic Systems http://www.ams-semitech.com S (SO-8 ) AMS DRW# 042293