DH2F100N4SE Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 1 Features 2 H (Common Heat Sink) ☞ Repetitive Reverse Voltage : VRRM = 400V ☞ Low Forward Voltage Drop : VF(typ.) = 1.1V ☞ Average Forward Current : IF(AV.) = 100A @ Tc = 85℃ ☞ Ultra-Fast Reverse Recovery Time : trr(typ.) = 50ns ☞ Extensive Characterization of Recovery Parameters ☞ Reduced EMI and RFI ☞ Non Isolation Type Package and 175℃ Operating Junction Temperature ☞ Dual FRD Construction Package : 3DM - 2NIE Series Applications Non Isolation Type High Speed & High Power Converters, Welders, Various Switching and Telecommunication Power Supply. Please see the package Out line information Ordering Information Device Name Optional Information DH2F100N4SE Common Heat Sink Non Isolation Type Absolute Maximum Ratings @ Tj=25℃(Per Leg) Symbol VRRM VR(DC) IF(AV) Parameter I 2t Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25℃ @ Tc = 85℃ Surge(non-repetitive) Forward Current I2t for Fusing Tj Tstg - Junction Temperature Storage Temperature Mounting Torque(M6) Terminal Torque(M6) Weight IFSM Conditions Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj = 25℃ Start Typical Including Screws 1/4 Ratings 400 320 180 100 2000 Unit V V A A A 16.7 * 103 A2s -40 ~ 175 -40 ~ 150 4.0 3.0 85 ℃ ℃ N.m N.m g DH2F100N4SE Thermal Characteristics Values Symbol Rth(j-c) Parameter Thermal Resistance(Non Isolation Type) Conditions Junction to Case Min. Typ. Max. - - 0.45 Unit ℃/W Electrical Characteristics @ Tj=25℃ (unless otherwise specified) Values Symbol VR VFM IRRM Trr Parameter Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Time Conditions Min. Typ. Max. 400 - - V - 1.1 1.05 - 1.4 1.3 1.0 V V mA Tc = 25℃ - 50 80 ns Tc = 100℃ - 80 - ns IR = 100uA IFM = 100A, Tc = 25℃ IFM = 100A, Tc =100℃ TC = 100℃, VRRM applied IFM = 100A, VR = 200V di/dt=-200A/us 2/4 Unit DH2F100N4SE Performance Curves 1000 Reverse Recovery Time,trr,[ns] 80 Forward Current IF[A] TC=100℃ 100 TC=25℃ 10 60 40 20 0 1 0 0.5 1 1.5 100 2 1000 di/dt[A/us] Forward Voltage Drop VF[V] Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 : Typical Reverse Recovery Time vs. -di/dt Average Forw ard C urrent IF(AVG) [A Thermal Responce Zthjc[℃/w] 1 0.1 0.01 0.001 1.E-05 120 80 DC 40 0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 60 Rectangular Pulse Duration[sec] 80 100 120 Case Temperature [℃] Fig. 3 : Transient Thermal Impedance(Zthjc) Characteristics Fig. 4 : Forward Current Derating Curve 3/4 140 160 DH2F100N4SE Package Out Line Information 2.5±0.2 MAX 16.8 3DM-2NIE Series 4/4