DH2F150N4S Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 1 Features 2 H (Common Heat Sink) ☞ Repetitive Reverse Voltage : VRRM = 400V ☞ Low Forward Voltage Drop : VF(typ.) = 1.05V ☞ Average Forward Current : IF(AV.) = 150A @ Tc = 100℃ ☞ Ultra-Fast Reverse Recovery Tim e : trr(typ.) = 100 ns ☞ Extensive Characterization of Recovery Parameters ☞ Reduced EMI and RFI ☞ Non Isolation Type Package and 175℃ Operating Junction Temperature ☞ Dual FRD Construction Package : 3DM - 2NI Series Applications Non Isolation Type High Speed & High Power Converters, Welders, Various Switching and Telecommunication Power Supply. Please see the package Out line information Ordering Information Device Name Optional Information DH2F150N4S Common Heat Sink Non Isolation Type Absolute Maximum Ratings @ Tj=25℃(Per Leg) Symbol Parameter I2t Repetitive Peak Reverse Voltage Reverse DC Voltage Average Forward Current @ Tc = 25℃ @ Tc = 100℃ Surge(non-repetitive) Forward Current I2t for Fusing Tj Tstg - Junction Temperature Storage Temperature Mounting Torque(M6) Terminal Torque(M6) Weight VRRM VR(DC) IF(AV) IFSM Conditions Resistive Load One Half Cycle at 60Hz, Peak Value Value for One Cycle Current, tw = 8.3ms, Tj = 25℃ Start Typical Including Screws 1/4 Ratings Unit 400 320 300 150 2750 V V A A A 37.5* 103 A2s -40 ~ 175 -40 ~ 150 4.0 3.0 95 ℃ ℃ N.m N.m g DH2F150N4S Thermal Characteristics Values Symbol Rth(j-c) Parameter Thermal Resistance(Non Isolation Type) Conditions Min. Typ. Max. - - 0.23 Junction to Case Unit ℃/W Electrical Characteristics @ Tj=25℃ (unless otherwise specified) Values Symbol VR VFM IRRM Trr Parameter Cathode Anode Breakdown Voltage Maximum Forward Voltage Repetitive Peak Reverse Current Reverse Recovery Tim e Conditions Min. Typ. 400 - - V - 1.05 0.95 - 1.3 1.1 1.0 V V mA Tc = 25℃ - 100 130 ns Tc = 100℃ - 130 - ns IR = 100uA IFM = 150A, Tc = 25℃ IFM = 150A, Tc =100℃ TC = 100℃, VRRM applied IFM = 150A, VR = 200V di/dt=-100A/us 2/4 Unit Max. DH2F150N4S Performance Curves 115 TC=100℃ 100 R ev ers e R ec o v ery T im e, t rr, [n s Forward Current IF[A] 1000 TC=25℃ 10 0.5 1 1.5 2 95 85 75 100 1 0 105 2.5 1000 di/dt[A/us] Forward Voltage Drop VF [V] Fig. 1 : Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 : Typical Reverse Recovery Time vs. -di/dt 160 1 Average Forward Current IF(AVG) [A] T h e r m a l R e s p o n c e Z t h jc [℃ /w ] 140 0.1 0.01 120 100 80 60 40 0.001 1.E-05 20 1.E -04 1.E-03 1.E-02 1.E-01 1.E+00 0 60 Rectangula r Pulse Duratio n[sec] 80 100 120 Case Temperature [℃] Fig. 3 : Transient Thermal Impedance(Zthjc ) Characteristics Fig. 4 : Forward Current Derating Curve 3/4 140 160 DH2F150N4S Package Out Line Information 3DM-2NI Series 4/4