Summarize Primary Use Productor Character MBR1040 THUR MBR1050 Dual High-Voltage Schottky Rectifiers REV:1.01 ◆ Half Bridge Rectified、Common Cathode Structure. ◆ Multilayer Metal -Silicon Potential Structure. ◆ Low Power Waste，High Efficiency. ◆ Beautiful High Temperature Character. ◆ Have Over Voltage protect loop，high reliability. ◆ RoHs Product. Typical Reference Data VRRM= 40V IF(AV)= 10A VRRM= 45V IF(AV)= 10A ● Low Voltage High Frequency Switching Power Supply. ● Low Voltage High Frequency ● Low Voltage Continued VRRM= 50V IF(AV)= 10A Invers Circuit. Circuit and Protection Circuit. ■ MBR1040、MBR1045、MBR1050 Schottky diode,in the manufacture uses the main process technology includes: Silicon epitaxial substrate, P+ loop technology,The potential metal and the silicon alloy technology, the device uses the two chip, the common cathode, the plastic half package structure. Polarity Absolute Maximum Ratings Item Maximal Inverted Repetitive Peak Voltage Symbol VRRM Maximal DC Interdiction Voltage VDC Average Rectified Forward Current TC=150℃ Device Whole MBR1040 MBR1045 MBR1050 Unit 50 40 45 V 50 40 45 V 10 IFAV A 5 Unilateral Forward Peak Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) Operating Junction Temperature Storage Temperature IFSM 150 A TJ -40- +175 ℃ TSTG -40- +175 ℃ Electricity Character Item IR VF Test Condition TJ =25℃ TJ =125℃ TJ =25℃ Minimum VR=VRRM Representat MBR1040 MBR1045 MBR1050 Unit ive 200 uA 5 IF=5A 0.67 www.asemi.tw 0.69 mA 0.72 V Page 1 MBR1040 THUR MBR1050 Dual High-Voltage Schottky Rectifiers REV:1.01 The forward voltage and forward current curve The reverse leak current and the reverse voltage (single-device) curve The crunode capacitance curve www.asemi.tw Page 2 MBR1040 THUR MBR1050 Dual High-Voltage Schottky Rectifiers REV:1.01 TO-220AB www.asemi.tw Page 3