ASEMI MBR3065F

Summarize
Primary Use
Productor
Character
MBR3060 THUR MBR3065
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆
Half Bridge Rectified、Common Cathode Structure.
◆
Multilayer Metal -Silicon Potential Structure.
◆
Low Power Waste,High Efficiency.
◆
Beautiful High Temperature Character.
◆
Have Over Voltage protect loop,high reliability.
◆
RoHs Product.
Typical Reference
Data
VRRM= 60V
IF(AV)= 30A
VRRM= 65V
IF(AV)= 30A
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
Circuit and Protection Circuit.
■ MBR3060、MBR3065 Schottky diode,in the manufacture uses
the main process technology includes: Silicon epitaxial
substrate, P+ loop technology,The potential metal and the
silicon alloy technology, the device uses the two chip, the
common cathode, the plastic package structure.
Polarity
Absolute Maximum Ratings
Symbol
VRRM
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Whole
VDC
MBR3060 MBR3065
60
65
60
65
IFAV
30
Unit
A
15
Unilateral
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
150
A
TJ
-40- +175
℃
TSTG
-40- +175
℃
Electricity Character
Item
IR
VF
Test
Condition
TJ =25℃
TJ =125℃
TJ =25℃
VR=VRRM
Minimum
Representat
MBR3060 MBR3065
ive
100
1
IF=15A
0.75
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Unit
uA
mA
0.77
V
Page 1
MBR3060 THUR MBR3065
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The crunode capacitance curve
The reverse leak current and the reverse
voltage (single-device) curve
Current Derating Curve, Per Element
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Page 2
MBR3060 THUR MBR3065
Dual High-Voltage Schottky Rectifiers
REV:1.01
ITO-220AB
注意事项:
1. 以金属螺丝(规格4-40)并加4.9mm直径金属垫片,将ITO-220AB自螺丝孔锁
在金属散热片上。
2 XXXX代表日期码,第一码表示公元年的最后一码,第二码表示生产时当月码
(A,B,C⋯.为一月,二月,三月⋯),第三,四码表示大量生产时批次码。
例如:2009年第一月生产的,D/C为9AXX。
3. 包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。
MBR3060
XXXX
修订内容
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