1SS389 SOD-523 SCHOTTKY BARRIER DIODE FEATURES High Speed High Reliability Small Package Low Forward Voltage APPLICATIONS High Speed Switching MARKING: S4 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 10 V IO Continuous Forward Current 100 mA IFM Peak Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current @10ms 1 A PD Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 667 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Reverse voltage V(BR) Reverse current IR Test conditions IR=100μA Total capacitance VF Ctot Typ Max Unit 10 V VR=10V 20 μA IF=5mA 0.3 V IF=100mA 0.5 VR=0V,f=1MHz 40 IF=1mA Forward voltage Min 0.18 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF