2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10u A,IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10 u A,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 uA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 uA DC current gain hFE VCE=-6V,IC=-1mA 200 400 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Base -emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -1.0 V fT VCE=-6V,IC=-10mA Transition frequency Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 180 MHz 4 pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SA1 1 7 9 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５