2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES z Complementary to 2SC2883 z Small Flat Package z Audio Frequency Amplifier Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-500mA VCE(sat) Collector-emitter saturation voltage -2 V -1 V VBE VCE=-2V, IC=-500mA Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz Transition frequency 320 IC=-1.5A,IB=-30mA Base-emitter voltage fT 100 VCE=-2V,IC= -500mA 50 120 pF MHz CLASSIFICATION OF hFE RANK O Y RANGE 100–200 160–320 MARKING HO1 HY1 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５