2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage z High Speed Switching Time 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-500mA 70 VCE=-2V, IC=-2A 20 240 Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V Cob Collector output capacitance fT Transition frequency 40 VCB=-10V,IE=0, f=1MHz VCE=-2V,IC= -0.5A 100 pF MHz CLASSIFICATION OF hFE RANK O Y RANGE 70–140 120–240 MARKING NO NY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５